Studies on aluminium corrosion during and after HF vapour treatment

Heini Ritala; Jyrki Kiihamäki; Mikko Heikkilä

doi:10.1016/j.mee.2009.07.005

Studies on aluminium corrosion during and after HF vapour treatment

Heini Ritala^*
, Jyrki Kiihamäki
, Mikko Heikkilä

^*Corresponding author for this work

University of Helsinki

Research output: Contribution to journal › Article › Scientific › peer-review

17 Citations (Scopus)

Abstract

The behaviour of aluminium during anhydrous hydrofluoric acid (HF) vapour etching of silicon dioxide films deposited by different methods was studied. Silicon dioxide films were grown by plasma-enhanced chemical vapour deposition (PECVD), low-pressure chemical vapour deposition (LPCVD), and a thermally oxidizing method. The etch rate of different oxides varies a lot. Etching of PECVD oxide causes residues on the aluminium surface as LPCVD and thermal oxide do not. The origin of the residues and different preventative methods are proposed.

Original language	English
Pages (from-to)	501-504
Journal	Microelectronic Engineering
Volume	87
Issue number	3
DOIs	https://doi.org/10.1016/j.mee.2009.07.005
Publication status	Published - 2010
MoE publication type	A1 Journal article-refereed

Keywords

aluminium
corrosion
ETCH
HF vapour
MEMS
sacrificial oxide etch
silicon dioxide
hydrofluoric acid

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10.1016/j.mee.2009.07.005

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title = "Studies on aluminium corrosion during and after HF vapour treatment",

abstract = "The behaviour of aluminium during anhydrous hydrofluoric acid (HF) vapour etching of silicon dioxide films deposited by different methods was studied. Silicon dioxide films were grown by plasma-enhanced chemical vapour deposition (PECVD), low-pressure chemical vapour deposition (LPCVD), and a thermally oxidizing method. The etch rate of different oxides varies a lot. Etching of PECVD oxide causes residues on the aluminium surface as LPCVD and thermal oxide do not. The origin of the residues and different preventative methods are proposed.",

keywords = "aluminium, corrosion, ETCH, HF vapour, MEMS, sacrificial oxide etch, silicon dioxide, hydrofluoric acid",

author = "Heini Ritala and Jyrki Kiiham{\"a}ki and Mikko Heikkil{\"a}",

note = "Project code: 14311 ",

year = "2010",

doi = "10.1016/j.mee.2009.07.005",

language = "English",

volume = "87",

pages = "501--504",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "3",

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TY - JOUR

T1 - Studies on aluminium corrosion during and after HF vapour treatment

AU - Ritala, Heini

AU - Kiihamäki, Jyrki

AU - Heikkilä, Mikko

N1 - Project code: 14311

PY - 2010

Y1 - 2010

N2 - The behaviour of aluminium during anhydrous hydrofluoric acid (HF) vapour etching of silicon dioxide films deposited by different methods was studied. Silicon dioxide films were grown by plasma-enhanced chemical vapour deposition (PECVD), low-pressure chemical vapour deposition (LPCVD), and a thermally oxidizing method. The etch rate of different oxides varies a lot. Etching of PECVD oxide causes residues on the aluminium surface as LPCVD and thermal oxide do not. The origin of the residues and different preventative methods are proposed.

AB - The behaviour of aluminium during anhydrous hydrofluoric acid (HF) vapour etching of silicon dioxide films deposited by different methods was studied. Silicon dioxide films were grown by plasma-enhanced chemical vapour deposition (PECVD), low-pressure chemical vapour deposition (LPCVD), and a thermally oxidizing method. The etch rate of different oxides varies a lot. Etching of PECVD oxide causes residues on the aluminium surface as LPCVD and thermal oxide do not. The origin of the residues and different preventative methods are proposed.

KW - aluminium

KW - corrosion

KW - ETCH

KW - HF vapour

KW - MEMS

KW - sacrificial oxide etch

KW - silicon dioxide

KW - hydrofluoric acid

U2 - 10.1016/j.mee.2009.07.005

DO - 10.1016/j.mee.2009.07.005

M3 - Article

SN - 0167-9317

VL - 87

SP - 501

EP - 504

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 3

ER -

Studies on aluminium corrosion during and after HF vapour treatment

Abstract

Keywords

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