Study of composition control and capping of MOVPE grown InGaN/InxAlyGa1-x-yN MQW structures

Muhammad Ali; Sami Suihkonen; Olli Svensk; Pekka Törmä; Markku Sopanen; Harri Lipsanen; Maxim A. Odnoblyudov; Vladislav Bougrov

doi:10.1002/pssc.200779233

Study of composition control and capping of MOVPE grown InGaN/InxAlyGa1-x-yN MQW structures

Muhammad Ali (Corresponding Author), Sami Suihkonen, Olli Svensk, Pekka Törmä, Markku Sopanen, Harri Lipsanen, Maxim A. Odnoblyudov, Vladislav Bougrov

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Abstract

We report on the growth and characterization of InGaN/InxAl yGa1-x-yN multiple quantum well (MQW) structures emitting at 380 nm. The samples were grown by metalorganic vapour phase epitaxy (MOVPE) and were analyzed by using high resolution X-ray diffraction (HRXRD), room and low temperature photoluminescence (PL) measurements. The effect of changing the indium precursor flow during the barrier and capping layer growth on the structural and optical quality of multiple quantum wells (MQWs) is explored. The HRXRD results show that the MQWs grown under the set of mentioned conditions are of very good structural quality. The temperature dependent PL results from our samples show that increasing the In content in the barriers enhances to a certain limit the internal quantum efficiency of the MQW structures. We also report that changing the In content in the capping layer effects the peak emission energy and does not have any significant impact on the optical quality of the MQW structures. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

Original language	English
Pages (from-to)	3020-3022
Number of pages	3
Journal	Physica Status Solidi C: Current Topics in Solid State Physics
Volume	5
Issue number	9
DOIs	https://doi.org/10.1002/pssc.200779233
Publication status	Published - Jul 2008
MoE publication type	A1 Journal article-refereed

Keywords

gallium nitride
InAIGaN
MOVPE
quantum wellz

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@article{d01c406daea240a081de5ed3dbe3fe0e,

title = "Study of composition control and capping of MOVPE grown InGaN/InxAlyGa1-x-yN MQW structures",

abstract = "We report on the growth and characterization of InGaN/InxAl yGa1-x-yN multiple quantum well (MQW) structures emitting at 380 nm. The samples were grown by metalorganic vapour phase epitaxy (MOVPE) and were analyzed by using high resolution X-ray diffraction (HRXRD), room and low temperature photoluminescence (PL) measurements. The effect of changing the indium precursor flow during the barrier and capping layer growth on the structural and optical quality of multiple quantum wells (MQWs) is explored. The HRXRD results show that the MQWs grown under the set of mentioned conditions are of very good structural quality. The temperature dependent PL results from our samples show that increasing the In content in the barriers enhances to a certain limit the internal quantum efficiency of the MQW structures. We also report that changing the In content in the capping layer effects the peak emission energy and does not have any significant impact on the optical quality of the MQW structures. {\textcopyright} 2008 Wiley-VCH Verlag GmbH & Co. KGaA.",

keywords = "gallium nitride, InAIGaN, MOVPE, quantum wellz",

author = "Muhammad Ali and Sami Suihkonen and Olli Svensk and Pekka T{\"o}rm{\"a} and Markku Sopanen and Harri Lipsanen and Odnoblyudov, {Maxim A.} and Vladislav Bougrov",

year = "2008",

month = jul,

doi = "10.1002/pssc.200779233",

language = "English",

volume = "5",

pages = "3020--3022",

journal = "Physica Status Solidi C: Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "9",

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TY - JOUR

T1 - Study of composition control and capping of MOVPE grown InGaN/InxAlyGa1-x-yN MQW structures

AU - Ali, Muhammad

AU - Suihkonen, Sami

AU - Svensk, Olli

AU - Törmä, Pekka

AU - Sopanen, Markku

AU - Lipsanen, Harri

AU - Odnoblyudov, Maxim A.

AU - Bougrov, Vladislav

PY - 2008/7

Y1 - 2008/7

N2 - We report on the growth and characterization of InGaN/InxAl yGa1-x-yN multiple quantum well (MQW) structures emitting at 380 nm. The samples were grown by metalorganic vapour phase epitaxy (MOVPE) and were analyzed by using high resolution X-ray diffraction (HRXRD), room and low temperature photoluminescence (PL) measurements. The effect of changing the indium precursor flow during the barrier and capping layer growth on the structural and optical quality of multiple quantum wells (MQWs) is explored. The HRXRD results show that the MQWs grown under the set of mentioned conditions are of very good structural quality. The temperature dependent PL results from our samples show that increasing the In content in the barriers enhances to a certain limit the internal quantum efficiency of the MQW structures. We also report that changing the In content in the capping layer effects the peak emission energy and does not have any significant impact on the optical quality of the MQW structures. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

AB - We report on the growth and characterization of InGaN/InxAl yGa1-x-yN multiple quantum well (MQW) structures emitting at 380 nm. The samples were grown by metalorganic vapour phase epitaxy (MOVPE) and were analyzed by using high resolution X-ray diffraction (HRXRD), room and low temperature photoluminescence (PL) measurements. The effect of changing the indium precursor flow during the barrier and capping layer growth on the structural and optical quality of multiple quantum wells (MQWs) is explored. The HRXRD results show that the MQWs grown under the set of mentioned conditions are of very good structural quality. The temperature dependent PL results from our samples show that increasing the In content in the barriers enhances to a certain limit the internal quantum efficiency of the MQW structures. We also report that changing the In content in the capping layer effects the peak emission energy and does not have any significant impact on the optical quality of the MQW structures. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

KW - gallium nitride

KW - InAIGaN

KW - MOVPE

KW - quantum wellz

U2 - 10.1002/pssc.200779233

DO - 10.1002/pssc.200779233

M3 - Article

SN - 1862-6351

VL - 5

SP - 3020

EP - 3022

JO - Physica Status Solidi C: Current Topics in Solid State Physics

JF - Physica Status Solidi C: Current Topics in Solid State Physics

IS - 9

ER -

Study of composition control and capping of MOVPE grown InGaN/InxAlyGa1-x-yN MQW structures

Abstract

Keywords

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