Keyphrases
Barrier Layer
25%
Capping Layer
25%
Capping Layer Effect
25%
Co. KGaA
25%
Composition Control
100%
Emission Energy
25%
High-resolution X-ray Diffraction (HRXRD)
50%
In Content
50%
Indium Gallium Nitride (InGaN)
100%
Indium Precursors
25%
Internal Quantum Efficiency
25%
Layer Growth
25%
Low-temperature Photoluminescence
25%
Metal Organic Vapor Phase Epitaxy (MOVPE)
100%
Multiple Quantum Well Structure
100%
Multiple Quantum Wells
50%
Optical Quality
50%
Peak Emissions
25%
Photoluminescence Measurements
25%
Room-temperature Photoluminescence
25%
Structural Quality
50%
Temperature-dependent Photoluminescence
25%
INIS
barriers
33%
control
100%
emission
16%
energy
16%
growth
33%
increasing
16%
indium
16%
layers
33%
low temperature
16%
peaks
16%
photoluminescence
33%
precursor
16%
quantum efficiency
16%
quantum wells
100%
resolution
33%
temperature dependence
16%
vapor phase epitaxy
100%
x-ray diffraction
33%
yttrium nitrides
100%
Engineering
Barrier Layer
16%
Capping Layer
33%
Emission Peak
16%
High Resolution
33%
Internal Quantum Efficiency
16%
Low-Temperature
16%
Optical Quality
33%
Quantum Well
100%
Ray Diffraction
33%
Room Temperature
16%
Physics
High Resolution X-Ray Diffraction
33%
Indium
16%
Metalorganic Vapor Phase Epitaxy
100%
Multiple Quantum Well
100%
Photoluminescence
33%