Study of concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy

Wei Li; Jari Likonen; Jouko Haapamaa; Markus Pessa

doi:10.1063/1.373028

Study of concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy

Wei Li, Jari Likonen, Jouko Haapamaa, Markus Pessa

Not published at VTT

Tampere University of Technology (TUT)

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Abstract

Concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry. At a growth temperature of 500°C, apparent Be diffusion occurs at a doping level over 4 × 10¹⁹ cm^-3. At lower temperature, the Be profile exhibits a significantly reduced diffusion. In contrast to Zn diffusion in metalorganic vapor phase epitaxy, no enhancement of Be redistribution in GaInP by adjacent n-type layers occurs. These results are explained based on the interstitial-substitutional diffusion model. A p⁺-n⁺ GaInP tunnel diode with a high reverse-biased conductance of 15 mA/cm² at 1.7 mV has been achieved.

Original language	English
Pages (from-to)	7592-7593
Number of pages	2
Journal	Journal of Applied Physics
Volume	87
Issue number	10
DOIs	https://doi.org/10.1063/1.373028
Publication status	Published - 15 May 2000
MoE publication type	Not Eligible

Access to Document

10.1063/1.373028

Cite this

@article{2f8c747dde334923a5db40e496a768d4,

title = "Study of concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy",

abstract = "Concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry. At a growth temperature of 500°C, apparent Be diffusion occurs at a doping level over 4 × 1019 cm-3. At lower temperature, the Be profile exhibits a significantly reduced diffusion. In contrast to Zn diffusion in metalorganic vapor phase epitaxy, no enhancement of Be redistribution in GaInP by adjacent n-type layers occurs. These results are explained based on the interstitial-substitutional diffusion model. A p+-n+ GaInP tunnel diode with a high reverse-biased conductance of 15 mA/cm2 at 1.7 mV has been achieved.",

author = "Wei Li and Jari Likonen and Jouko Haapamaa and Markus Pessa",

year = "2000",

month = may,

day = "15",

doi = "10.1063/1.373028",

language = "English",

volume = "87",

pages = "7592--7593",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics (AIP)",

number = "10",

}

TY - JOUR

T1 - Study of concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy

AU - Li, Wei

AU - Likonen, Jari

AU - Haapamaa, Jouko

AU - Pessa, Markus

PY - 2000/5/15

Y1 - 2000/5/15

N2 - Concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry. At a growth temperature of 500°C, apparent Be diffusion occurs at a doping level over 4 × 1019 cm-3. At lower temperature, the Be profile exhibits a significantly reduced diffusion. In contrast to Zn diffusion in metalorganic vapor phase epitaxy, no enhancement of Be redistribution in GaInP by adjacent n-type layers occurs. These results are explained based on the interstitial-substitutional diffusion model. A p+-n+ GaInP tunnel diode with a high reverse-biased conductance of 15 mA/cm2 at 1.7 mV has been achieved.

AB - Concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry. At a growth temperature of 500°C, apparent Be diffusion occurs at a doping level over 4 × 1019 cm-3. At lower temperature, the Be profile exhibits a significantly reduced diffusion. In contrast to Zn diffusion in metalorganic vapor phase epitaxy, no enhancement of Be redistribution in GaInP by adjacent n-type layers occurs. These results are explained based on the interstitial-substitutional diffusion model. A p+-n+ GaInP tunnel diode with a high reverse-biased conductance of 15 mA/cm2 at 1.7 mV has been achieved.

UR - http://www.scopus.com/inward/record.url?scp=3242694898&partnerID=8YFLogxK

U2 - 10.1063/1.373028

DO - 10.1063/1.373028

M3 - Article

AN - SCOPUS:3242694898

SN - 0021-8979

VL - 87

SP - 7592

EP - 7593

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Study of concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this