Study of ohmic multilayer metal contacts to p-type ZnSe

A. Rinta-Möykky, P. Uusimaa, S. Suhonen, M. Valden, A. Salokatve, Markus Pessa, Jari Likonen

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)

    Abstract

    A novel approach for making ohmic contacts to p-type ZnSe has been introduced. This approach includes growth of p-ZnSe at low temperature by a variant of molecular beam epitaxy, then treating the surface with KOH solution, followed by deposition of a Te/Pd/Pt/Au metal layer and annealing at 200–250 °C for 5 min. As a result, a stable ohmic contact up to a current density of 2 kA cm−2 was obtained. Using this contact fabrication procedure, a ZnSe-based quantum-well laser was demonstrated in continuous wave mode of operation at room temperature. The formation of the ohmic contact is suggested to be due to the presence of oxygen on the ZnSe surface, the creation of TeO2 at the metal/ZnSe interface, and the diffusion of Pd into ZnSe.
    Original languageEnglish
    Pages (from-to)347-353
    Number of pages7
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Volume17
    Issue number2
    DOIs
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Ohmic contacts
    electric contacts
    Multilayers
    Metals
    metals
    Quantum well lasers
    quantum well lasers
    Molecular beam epitaxy
    continuous radiation
    Current density
    molecular beam epitaxy
    Annealing
    current density
    Oxygen
    Fabrication
    Temperature
    fabrication
    annealing
    room temperature
    oxygen

    Cite this

    Rinta-Möykky, A. ; Uusimaa, P. ; Suhonen, S. ; Valden, M. ; Salokatve, A. ; Pessa, Markus ; Likonen, Jari. / Study of ohmic multilayer metal contacts to p-type ZnSe. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1999 ; Vol. 17, No. 2. pp. 347-353.
    @article{5680577811a9405e9d974906a03d22a4,
    title = "Study of ohmic multilayer metal contacts to p-type ZnSe",
    abstract = "A novel approach for making ohmic contacts to p-type ZnSe has been introduced. This approach includes growth of p-ZnSe at low temperature by a variant of molecular beam epitaxy, then treating the surface with KOH solution, followed by deposition of a Te/Pd/Pt/Au metal layer and annealing at 200–250 °C for 5 min. As a result, a stable ohmic contact up to a current density of 2 kA cm−2 was obtained. Using this contact fabrication procedure, a ZnSe-based quantum-well laser was demonstrated in continuous wave mode of operation at room temperature. The formation of the ohmic contact is suggested to be due to the presence of oxygen on the ZnSe surface, the creation of TeO2 at the metal/ZnSe interface, and the diffusion of Pd into ZnSe.",
    author = "A. Rinta-M{\"o}ykky and P. Uusimaa and S. Suhonen and M. Valden and A. Salokatve and Markus Pessa and Jari Likonen",
    year = "1999",
    doi = "10.1116/1.581594",
    language = "English",
    volume = "17",
    pages = "347--353",
    journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",
    issn = "0734-2101",
    publisher = "American Vacuum Society AVS",
    number = "2",

    }

    Rinta-Möykky, A, Uusimaa, P, Suhonen, S, Valden, M, Salokatve, A, Pessa, M & Likonen, J 1999, 'Study of ohmic multilayer metal contacts to p-type ZnSe', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 17, no. 2, pp. 347-353. https://doi.org/10.1116/1.581594

    Study of ohmic multilayer metal contacts to p-type ZnSe. / Rinta-Möykky, A.; Uusimaa, P.; Suhonen, S.; Valden, M.; Salokatve, A.; Pessa, Markus; Likonen, Jari.

    In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, No. 2, 1999, p. 347-353.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Study of ohmic multilayer metal contacts to p-type ZnSe

    AU - Rinta-Möykky, A.

    AU - Uusimaa, P.

    AU - Suhonen, S.

    AU - Valden, M.

    AU - Salokatve, A.

    AU - Pessa, Markus

    AU - Likonen, Jari

    PY - 1999

    Y1 - 1999

    N2 - A novel approach for making ohmic contacts to p-type ZnSe has been introduced. This approach includes growth of p-ZnSe at low temperature by a variant of molecular beam epitaxy, then treating the surface with KOH solution, followed by deposition of a Te/Pd/Pt/Au metal layer and annealing at 200–250 °C for 5 min. As a result, a stable ohmic contact up to a current density of 2 kA cm−2 was obtained. Using this contact fabrication procedure, a ZnSe-based quantum-well laser was demonstrated in continuous wave mode of operation at room temperature. The formation of the ohmic contact is suggested to be due to the presence of oxygen on the ZnSe surface, the creation of TeO2 at the metal/ZnSe interface, and the diffusion of Pd into ZnSe.

    AB - A novel approach for making ohmic contacts to p-type ZnSe has been introduced. This approach includes growth of p-ZnSe at low temperature by a variant of molecular beam epitaxy, then treating the surface with KOH solution, followed by deposition of a Te/Pd/Pt/Au metal layer and annealing at 200–250 °C for 5 min. As a result, a stable ohmic contact up to a current density of 2 kA cm−2 was obtained. Using this contact fabrication procedure, a ZnSe-based quantum-well laser was demonstrated in continuous wave mode of operation at room temperature. The formation of the ohmic contact is suggested to be due to the presence of oxygen on the ZnSe surface, the creation of TeO2 at the metal/ZnSe interface, and the diffusion of Pd into ZnSe.

    U2 - 10.1116/1.581594

    DO - 10.1116/1.581594

    M3 - Article

    VL - 17

    SP - 347

    EP - 353

    JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

    JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

    SN - 0734-2101

    IS - 2

    ER -