Study of ohmic multilayer metal contacts to p-type ZnSe

A. Rinta-Möykky, P. Uusimaa, S. Suhonen, M. Valden, A. Salokatve, Markus Pessa, Jari Likonen

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    Abstract

    A novel approach for making ohmic contacts to p-type ZnSe has been introduced. This approach includes growth of p-ZnSe at low temperature by a variant of molecular beam epitaxy, then treating the surface with KOH solution, followed by deposition of a Te/Pd/Pt/Au metal layer and annealing at 200–250 °C for 5 min. As a result, a stable ohmic contact up to a current density of 2 kA cm−2 was obtained. Using this contact fabrication procedure, a ZnSe-based quantum-well laser was demonstrated in continuous wave mode of operation at room temperature. The formation of the ohmic contact is suggested to be due to the presence of oxygen on the ZnSe surface, the creation of TeO2 at the metal/ZnSe interface, and the diffusion of Pd into ZnSe.
    Original languageEnglish
    Pages (from-to)347-353
    Number of pages7
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Volume17
    Issue number2
    DOIs
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

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