Study of ohmic multilayer metal contacts to p-type ZnSe

A. Rinta-Möykky, P. Uusimaa, S. Suhonen, M. Valden, A. Salokatve, Markus Pessa, Jari Likonen

Research output: Contribution to journalArticleScientificpeer-review

Abstract

A novel approach for making ohmic contacts to p-type ZnSe has been introduced. This approach includes growth of p-ZnSe at low temperature by a variant of molecular beam epitaxy, then treating the surface with KOH solution, followed by deposition of a Te/Pd/Pt/Au metal layer and annealing at 200–250 °C for 5 min. As a result, a stable ohmic contact up to a current density of 2 kA cm−2 was obtained. Using this contact fabrication procedure, a ZnSe-based quantum-well laser was demonstrated in continuous wave mode of operation at room temperature. The formation of the ohmic contact is suggested to be due to the presence of oxygen on the ZnSe surface, the creation of TeO2 at the metal/ZnSe interface, and the diffusion of Pd into ZnSe.
Original languageEnglish
Pages (from-to)347-353
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume17
Issue number2
DOIs
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

Fingerprint

Ohmic contacts
electric contacts
Multilayers
Metals
metals
Quantum well lasers
quantum well lasers
Molecular beam epitaxy
continuous radiation
Current density
molecular beam epitaxy
Annealing
current density
Oxygen
Fabrication
Temperature
fabrication
annealing
room temperature
oxygen

Cite this

Rinta-Möykky, A. ; Uusimaa, P. ; Suhonen, S. ; Valden, M. ; Salokatve, A. ; Pessa, Markus ; Likonen, Jari. / Study of ohmic multilayer metal contacts to p-type ZnSe. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1999 ; Vol. 17, No. 2. pp. 347-353.
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title = "Study of ohmic multilayer metal contacts to p-type ZnSe",
abstract = "A novel approach for making ohmic contacts to p-type ZnSe has been introduced. This approach includes growth of p-ZnSe at low temperature by a variant of molecular beam epitaxy, then treating the surface with KOH solution, followed by deposition of a Te/Pd/Pt/Au metal layer and annealing at 200–250 °C for 5 min. As a result, a stable ohmic contact up to a current density of 2 kA cm−2 was obtained. Using this contact fabrication procedure, a ZnSe-based quantum-well laser was demonstrated in continuous wave mode of operation at room temperature. The formation of the ohmic contact is suggested to be due to the presence of oxygen on the ZnSe surface, the creation of TeO2 at the metal/ZnSe interface, and the diffusion of Pd into ZnSe.",
author = "A. Rinta-M{\"o}ykky and P. Uusimaa and S. Suhonen and M. Valden and A. Salokatve and Markus Pessa and Jari Likonen",
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Rinta-Möykky, A, Uusimaa, P, Suhonen, S, Valden, M, Salokatve, A, Pessa, M & Likonen, J 1999, 'Study of ohmic multilayer metal contacts to p-type ZnSe', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 17, no. 2, pp. 347-353. https://doi.org/10.1116/1.581594

Study of ohmic multilayer metal contacts to p-type ZnSe. / Rinta-Möykky, A.; Uusimaa, P.; Suhonen, S.; Valden, M.; Salokatve, A.; Pessa, Markus; Likonen, Jari.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, No. 2, 1999, p. 347-353.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Study of ohmic multilayer metal contacts to p-type ZnSe

AU - Rinta-Möykky, A.

AU - Uusimaa, P.

AU - Suhonen, S.

AU - Valden, M.

AU - Salokatve, A.

AU - Pessa, Markus

AU - Likonen, Jari

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AB - A novel approach for making ohmic contacts to p-type ZnSe has been introduced. This approach includes growth of p-ZnSe at low temperature by a variant of molecular beam epitaxy, then treating the surface with KOH solution, followed by deposition of a Te/Pd/Pt/Au metal layer and annealing at 200–250 °C for 5 min. As a result, a stable ohmic contact up to a current density of 2 kA cm−2 was obtained. Using this contact fabrication procedure, a ZnSe-based quantum-well laser was demonstrated in continuous wave mode of operation at room temperature. The formation of the ohmic contact is suggested to be due to the presence of oxygen on the ZnSe surface, the creation of TeO2 at the metal/ZnSe interface, and the diffusion of Pd into ZnSe.

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