Study of processing parameters on the mechanical and compositional properties of plasma-enhanced atomic layer deposition aluminum nitride films

Alexander Pyymaki-Perros (Corresponding author), Oili Ylivaara, Xuwen Liu, Jaakko Julin, Timo Sajavaara, Saima Ali, Sakari Sintonen, Harri Lipsanen, Riikka L. Puurunen (Corresponding author)

    Research output: Contribution to conferenceConference AbstractScientificpeer-review

    Abstract

    The mechanical and compositional properties of plasma-enhanced atomic layer deposition (PEALD) AlN films were examined under varying processing parameters. The results of this initial study indicate deposition temperature, plasma chemistry, and increasing the plasma source bias voltage significantly alter some key characteristics of PEALD AlN films. Residual stress, hardness, and density were observed to positively correlate with deposition temperature whereas Young’s modulus did not exhibit such a strong correlation. The choice of plasma chemistry, NH3-based versus N2H2-based, was also found to significantly influence measured residual stress and hardness. Film stoichiometry and impurity content, particularly hydrogen, were observed to depend on processing conditions. While the PEALD AlN films are shown to normally be under tensile stress, depositing compressively stressed PEALD AlN was possible with increased bias voltage implying that careful control of bias voltage can enable stress-tuned ALD films. Deposition under increased bias voltage was found to lead to a universal improvement in film properties as increases in hardness, density, Young’s modulus values were measured in addition to a significant reduction in impurity content. The results demonstrate that processing conditions can strongly affect the mechanical properties of the PEALD AlN films and that high-bias voltage PEALD is an interesting area for further study.
    Original languageEnglish
    Publication statusPublished - 2016
    Event16th International Conference on Atomic Layer Deposition, ALD 2016 - Dublin, Ireland
    Duration: 24 Jul 201627 Jul 2016

    Conference

    Conference16th International Conference on Atomic Layer Deposition, ALD 2016
    Abbreviated titleALD 2016
    CountryIreland
    CityDublin
    Period24/07/1627/07/16

    Fingerprint

    aluminum nitrides
    atomic layer epitaxy
    mechanical properties
    electric potential
    plasma chemistry
    hardness
    residual stress
    modulus of elasticity
    impurities
    tensile stress
    stoichiometry
    temperature
    hydrogen

    Keywords

    • ALD
    • AlN

    Cite this

    Pyymaki-Perros, A., Ylivaara, O., Liu, X., Julin, J., Sajavaara, T., Ali, S., ... Puurunen, R. L. (2016). Study of processing parameters on the mechanical and compositional properties of plasma-enhanced atomic layer deposition aluminum nitride films. Abstract from 16th International Conference on Atomic Layer Deposition, ALD 2016, Dublin, Ireland.
    Pyymaki-Perros, Alexander ; Ylivaara, Oili ; Liu, Xuwen ; Julin, Jaakko ; Sajavaara, Timo ; Ali, Saima ; Sintonen, Sakari ; Lipsanen, Harri ; Puurunen, Riikka L. / Study of processing parameters on the mechanical and compositional properties of plasma-enhanced atomic layer deposition aluminum nitride films. Abstract from 16th International Conference on Atomic Layer Deposition, ALD 2016, Dublin, Ireland.
    @conference{76cd9041a2844c0f864b247f47153e5b,
    title = "Study of processing parameters on the mechanical and compositional properties of plasma-enhanced atomic layer deposition aluminum nitride films",
    abstract = "The mechanical and compositional properties of plasma-enhanced atomic layer deposition (PEALD) AlN films were examined under varying processing parameters. The results of this initial study indicate deposition temperature, plasma chemistry, and increasing the plasma source bias voltage significantly alter some key characteristics of PEALD AlN films. Residual stress, hardness, and density were observed to positively correlate with deposition temperature whereas Young’s modulus did not exhibit such a strong correlation. The choice of plasma chemistry, NH3-based versus N2H2-based, was also found to significantly influence measured residual stress and hardness. Film stoichiometry and impurity content, particularly hydrogen, were observed to depend on processing conditions. While the PEALD AlN films are shown to normally be under tensile stress, depositing compressively stressed PEALD AlN was possible with increased bias voltage implying that careful control of bias voltage can enable stress-tuned ALD films. Deposition under increased bias voltage was found to lead to a universal improvement in film properties as increases in hardness, density, Young’s modulus values were measured in addition to a significant reduction in impurity content. The results demonstrate that processing conditions can strongly affect the mechanical properties of the PEALD AlN films and that high-bias voltage PEALD is an interesting area for further study.",
    keywords = "ALD, AlN",
    author = "Alexander Pyymaki-Perros and Oili Ylivaara and Xuwen Liu and Jaakko Julin and Timo Sajavaara and Saima Ali and Sakari Sintonen and Harri Lipsanen and Puurunen, {Riikka L.}",
    note = "Project 74717 MECHALD Project 102086 ALDCoE; 16th International Conference on Atomic Layer Deposition, ALD 2016, ALD 2016 ; Conference date: 24-07-2016 Through 27-07-2016",
    year = "2016",
    language = "English",

    }

    Pyymaki-Perros, A, Ylivaara, O, Liu, X, Julin, J, Sajavaara, T, Ali, S, Sintonen, S, Lipsanen, H & Puurunen, RL 2016, 'Study of processing parameters on the mechanical and compositional properties of plasma-enhanced atomic layer deposition aluminum nitride films', 16th International Conference on Atomic Layer Deposition, ALD 2016, Dublin, Ireland, 24/07/16 - 27/07/16.

    Study of processing parameters on the mechanical and compositional properties of plasma-enhanced atomic layer deposition aluminum nitride films. / Pyymaki-Perros, Alexander (Corresponding author); Ylivaara, Oili; Liu, Xuwen; Julin, Jaakko; Sajavaara, Timo; Ali, Saima; Sintonen, Sakari; Lipsanen, Harri; Puurunen, Riikka L. (Corresponding author).

    2016. Abstract from 16th International Conference on Atomic Layer Deposition, ALD 2016, Dublin, Ireland.

    Research output: Contribution to conferenceConference AbstractScientificpeer-review

    TY - CONF

    T1 - Study of processing parameters on the mechanical and compositional properties of plasma-enhanced atomic layer deposition aluminum nitride films

    AU - Pyymaki-Perros, Alexander

    AU - Ylivaara, Oili

    AU - Liu, Xuwen

    AU - Julin, Jaakko

    AU - Sajavaara, Timo

    AU - Ali, Saima

    AU - Sintonen, Sakari

    AU - Lipsanen, Harri

    AU - Puurunen, Riikka L.

    N1 - Project 74717 MECHALD Project 102086 ALDCoE

    PY - 2016

    Y1 - 2016

    N2 - The mechanical and compositional properties of plasma-enhanced atomic layer deposition (PEALD) AlN films were examined under varying processing parameters. The results of this initial study indicate deposition temperature, plasma chemistry, and increasing the plasma source bias voltage significantly alter some key characteristics of PEALD AlN films. Residual stress, hardness, and density were observed to positively correlate with deposition temperature whereas Young’s modulus did not exhibit such a strong correlation. The choice of plasma chemistry, NH3-based versus N2H2-based, was also found to significantly influence measured residual stress and hardness. Film stoichiometry and impurity content, particularly hydrogen, were observed to depend on processing conditions. While the PEALD AlN films are shown to normally be under tensile stress, depositing compressively stressed PEALD AlN was possible with increased bias voltage implying that careful control of bias voltage can enable stress-tuned ALD films. Deposition under increased bias voltage was found to lead to a universal improvement in film properties as increases in hardness, density, Young’s modulus values were measured in addition to a significant reduction in impurity content. The results demonstrate that processing conditions can strongly affect the mechanical properties of the PEALD AlN films and that high-bias voltage PEALD is an interesting area for further study.

    AB - The mechanical and compositional properties of plasma-enhanced atomic layer deposition (PEALD) AlN films were examined under varying processing parameters. The results of this initial study indicate deposition temperature, plasma chemistry, and increasing the plasma source bias voltage significantly alter some key characteristics of PEALD AlN films. Residual stress, hardness, and density were observed to positively correlate with deposition temperature whereas Young’s modulus did not exhibit such a strong correlation. The choice of plasma chemistry, NH3-based versus N2H2-based, was also found to significantly influence measured residual stress and hardness. Film stoichiometry and impurity content, particularly hydrogen, were observed to depend on processing conditions. While the PEALD AlN films are shown to normally be under tensile stress, depositing compressively stressed PEALD AlN was possible with increased bias voltage implying that careful control of bias voltage can enable stress-tuned ALD films. Deposition under increased bias voltage was found to lead to a universal improvement in film properties as increases in hardness, density, Young’s modulus values were measured in addition to a significant reduction in impurity content. The results demonstrate that processing conditions can strongly affect the mechanical properties of the PEALD AlN films and that high-bias voltage PEALD is an interesting area for further study.

    KW - ALD

    KW - AlN

    UR - https://www.youtube.com/watch?v=WZVKkn98z08

    UR - https://happen.conference-services.net/resources/2074/4959/pdf/ALDep2016_0357.pdf

    M3 - Conference Abstract

    ER -

    Pyymaki-Perros A, Ylivaara O, Liu X, Julin J, Sajavaara T, Ali S et al. Study of processing parameters on the mechanical and compositional properties of plasma-enhanced atomic layer deposition aluminum nitride films. 2016. Abstract from 16th International Conference on Atomic Layer Deposition, ALD 2016, Dublin, Ireland.