Study on Al2O3 film in anhydrous HF vapor

Heini Ritala, Mikko Tuohiniemi

Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

Abstract

HF vapor etching using thin Al2O3 film as etch stop material was studied. It was found that behavior of Al2O3 film in HF vapor can not be predicted from the blanket film studies only but it is important to use samples that resemble closely real process conditions instead. Resistivity of Al2O3 against HF vapor depends on whether a SiO2 was etched on top of it or not. Other affecting factors are the thickness of the Al2O3 film, HF vapor process, stress of the oxide on top of it as well as topography under it. Even very thin 3 nm Al2O3 film resist HF vapor if no SiO2 film is etched on top of it and etch process is slow enough.
Original languageEnglish
Pages (from-to)45-48
JournalSolid State Phenomena
DOIs
Publication statusPublished - 2012
MoE publication typeA4 Article in a conference publication
Event10th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2010 - Ostend, Belgium
Duration: 20 Sep 201022 Sep 2010

Keywords

  • Al 2O 3
  • atomic layer deposition
  • HP vapor etching

Fingerprint Dive into the research topics of 'Study on Al<sub>2</sub>O<sub>3</sub> film in anhydrous HF vapor'. Together they form a unique fingerprint.

  • Cite this