Study on Al2O3 film in anhydrous HF vapor

Heini Ritala, Mikko Tuohiniemi

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

HF vapor etching using thin Al2O3 film as etch stop material was studied. It was found that behavior of Al2O3 film in HF vapor can not be predicted from the blanket film studies only but it is important to use samples that resemble closely real process conditions instead. Resistivity of Al2O3 against HF vapor depends on whether a SiO2 was etched on top of it or not. Other affecting factors are the thickness of the Al2O3 film, HF vapor process, stress of the oxide on top of it as well as topography under it. Even very thin 3 nm Al2O3 film resist HF vapor if no SiO2 film is etched on top of it and etch process is slow enough.
Original languageEnglish
Title of host publicationUltra Clean Processing of Semiconductor Surfaces X
EditorsPaul Mertens, Marc Meuris, Marc Heyns
Pages45-48
DOIs
Publication statusPublished - 2012
MoE publication typeA4 Article in a conference publication
Event10th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2010 - Ostend, Belgium
Duration: 20 Sep 201022 Sep 2010

Publication series

SeriesSolid State Phenomena
Volume187
ISSN1012-0394

Conference

Conference10th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2010
CountryBelgium
CityOstend
Period20/09/1022/09/10

Fingerprint

Vapors
Topography
Etching
Thin films
Oxides

Keywords

  • Al 2O 3
  • atomic layer deposition
  • HP vapor etching

Cite this

Ritala, H., & Tuohiniemi, M. (2012). Study on Al2O3 film in anhydrous HF vapor. In P. Mertens, M. Meuris, & M. Heyns (Eds.), Ultra Clean Processing of Semiconductor Surfaces X (pp. 45-48). Solid State Phenomena, Vol.. 187 https://doi.org/10.4028/www.scientific.net/SSP.187.45
Ritala, Heini ; Tuohiniemi, Mikko. / Study on Al2O3 film in anhydrous HF vapor. Ultra Clean Processing of Semiconductor Surfaces X. editor / Paul Mertens ; Marc Meuris ; Marc Heyns. 2012. pp. 45-48 (Solid State Phenomena, Vol. 187).
@inproceedings{8828740bf56a49e6b81a68b22339c01b,
title = "Study on Al2O3 film in anhydrous HF vapor",
abstract = "HF vapor etching using thin Al2O3 film as etch stop material was studied. It was found that behavior of Al2O3 film in HF vapor can not be predicted from the blanket film studies only but it is important to use samples that resemble closely real process conditions instead. Resistivity of Al2O3 against HF vapor depends on whether a SiO2 was etched on top of it or not. Other affecting factors are the thickness of the Al2O3 film, HF vapor process, stress of the oxide on top of it as well as topography under it. Even very thin 3 nm Al2O3 film resist HF vapor if no SiO2 film is etched on top of it and etch process is slow enough.",
keywords = "Al 2O 3, atomic layer deposition, HP vapor etching",
author = "Heini Ritala and Mikko Tuohiniemi",
year = "2012",
doi = "10.4028/www.scientific.net/SSP.187.45",
language = "English",
isbn = "978-3-03785-388-7",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications",
pages = "45--48",
editor = "Paul Mertens and Marc Meuris and Marc Heyns",
booktitle = "Ultra Clean Processing of Semiconductor Surfaces X",

}

Ritala, H & Tuohiniemi, M 2012, Study on Al2O3 film in anhydrous HF vapor. in P Mertens, M Meuris & M Heyns (eds), Ultra Clean Processing of Semiconductor Surfaces X. Solid State Phenomena, vol. 187, pp. 45-48, 10th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2010, Ostend, Belgium, 20/09/10. https://doi.org/10.4028/www.scientific.net/SSP.187.45

Study on Al2O3 film in anhydrous HF vapor. / Ritala, Heini; Tuohiniemi, Mikko.

Ultra Clean Processing of Semiconductor Surfaces X. ed. / Paul Mertens; Marc Meuris; Marc Heyns. 2012. p. 45-48 (Solid State Phenomena, Vol. 187).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Study on Al2O3 film in anhydrous HF vapor

AU - Ritala, Heini

AU - Tuohiniemi, Mikko

PY - 2012

Y1 - 2012

N2 - HF vapor etching using thin Al2O3 film as etch stop material was studied. It was found that behavior of Al2O3 film in HF vapor can not be predicted from the blanket film studies only but it is important to use samples that resemble closely real process conditions instead. Resistivity of Al2O3 against HF vapor depends on whether a SiO2 was etched on top of it or not. Other affecting factors are the thickness of the Al2O3 film, HF vapor process, stress of the oxide on top of it as well as topography under it. Even very thin 3 nm Al2O3 film resist HF vapor if no SiO2 film is etched on top of it and etch process is slow enough.

AB - HF vapor etching using thin Al2O3 film as etch stop material was studied. It was found that behavior of Al2O3 film in HF vapor can not be predicted from the blanket film studies only but it is important to use samples that resemble closely real process conditions instead. Resistivity of Al2O3 against HF vapor depends on whether a SiO2 was etched on top of it or not. Other affecting factors are the thickness of the Al2O3 film, HF vapor process, stress of the oxide on top of it as well as topography under it. Even very thin 3 nm Al2O3 film resist HF vapor if no SiO2 film is etched on top of it and etch process is slow enough.

KW - Al 2O 3

KW - atomic layer deposition

KW - HP vapor etching

U2 - 10.4028/www.scientific.net/SSP.187.45

DO - 10.4028/www.scientific.net/SSP.187.45

M3 - Conference article in proceedings

SN - 978-3-03785-388-7

T3 - Solid State Phenomena

SP - 45

EP - 48

BT - Ultra Clean Processing of Semiconductor Surfaces X

A2 - Mertens, Paul

A2 - Meuris, Marc

A2 - Heyns, Marc

ER -

Ritala H, Tuohiniemi M. Study on Al2O3 film in anhydrous HF vapor. In Mertens P, Meuris M, Heyns M, editors, Ultra Clean Processing of Semiconductor Surfaces X. 2012. p. 45-48. (Solid State Phenomena, Vol. 187). https://doi.org/10.4028/www.scientific.net/SSP.187.45