Study on Al2O3 film in anhydrous HF vapor

Heini Ritala; Mikko Tuohiniemi

doi:10.4028/www.scientific.net/SSP.187.45

Study on Al₂O₃ film in anhydrous HF vapor

Heini Ritala, Mikko Tuohiniemi

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article in a proceedings journal › Scientific › peer-review

1 Citation (Scopus)

Abstract

HF vapor etching using thin Al₂O₃ film as etch stop material was studied. It was found that behavior of Al₂O₃ film in HF vapor can not be predicted from the blanket film studies only but it is important to use samples that resemble closely real process conditions instead. Resistivity of Al₂O₃ against HF vapor depends on whether a SiO₂ was etched on top of it or not. Other affecting factors are the thickness of the Al₂O₃ film, HF vapor process, stress of the oxide on top of it as well as topography under it. Even very thin 3 nm Al₂O₃ film resist HF vapor if no SiO₂ film is etched on top of it and etch process is slow enough.

Original language	English
Pages (from-to)	45-48
Journal	Solid State Phenomena
DOIs	https://doi.org/10.4028/www.scientific.net/SSP.187.45
Publication status	Published - 2012
MoE publication type	A4 Article in a conference publication
Event	10th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2010 - Ostend, Belgium Duration: 20 Sept 2010 → 22 Sept 2010

Keywords

Al 2O 3
atomic layer deposition
HP vapor etching

Access to Document

10.4028/www.scientific.net/SSP.187.45

Cite this

@article{8828740bf56a49e6b81a68b22339c01b,

title = "Study on Al2O3 film in anhydrous HF vapor",

abstract = "HF vapor etching using thin Al2O3 film as etch stop material was studied. It was found that behavior of Al2O3 film in HF vapor can not be predicted from the blanket film studies only but it is important to use samples that resemble closely real process conditions instead. Resistivity of Al2O3 against HF vapor depends on whether a SiO2 was etched on top of it or not. Other affecting factors are the thickness of the Al2O3 film, HF vapor process, stress of the oxide on top of it as well as topography under it. Even very thin 3 nm Al2O3 film resist HF vapor if no SiO2 film is etched on top of it and etch process is slow enough. ",

keywords = "Al 2O 3, atomic layer deposition, HP vapor etching",

author = "Heini Ritala and Mikko Tuohiniemi",

year = "2012",

doi = "10.4028/www.scientific.net/SSP.187.45",

language = "English",

pages = "45--48",

journal = "Solid State Phenomena",

issn = "1012-0394",

publisher = "Trans Tech Publications Ltd",

note = "10th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2010 ; Conference date: 20-09-2010 Through 22-09-2010",

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TY - JOUR

T1 - Study on Al2O3 film in anhydrous HF vapor

AU - Ritala, Heini

AU - Tuohiniemi, Mikko

PY - 2012

Y1 - 2012

N2 - HF vapor etching using thin Al2O3 film as etch stop material was studied. It was found that behavior of Al2O3 film in HF vapor can not be predicted from the blanket film studies only but it is important to use samples that resemble closely real process conditions instead. Resistivity of Al2O3 against HF vapor depends on whether a SiO2 was etched on top of it or not. Other affecting factors are the thickness of the Al2O3 film, HF vapor process, stress of the oxide on top of it as well as topography under it. Even very thin 3 nm Al2O3 film resist HF vapor if no SiO2 film is etched on top of it and etch process is slow enough.

AB - HF vapor etching using thin Al2O3 film as etch stop material was studied. It was found that behavior of Al2O3 film in HF vapor can not be predicted from the blanket film studies only but it is important to use samples that resemble closely real process conditions instead. Resistivity of Al2O3 against HF vapor depends on whether a SiO2 was etched on top of it or not. Other affecting factors are the thickness of the Al2O3 film, HF vapor process, stress of the oxide on top of it as well as topography under it. Even very thin 3 nm Al2O3 film resist HF vapor if no SiO2 film is etched on top of it and etch process is slow enough.

KW - Al 2O 3

KW - atomic layer deposition

KW - HP vapor etching

U2 - 10.4028/www.scientific.net/SSP.187.45

DO - 10.4028/www.scientific.net/SSP.187.45

M3 - Article in a proceedings journal

SN - 1012-0394

SP - 45

EP - 48

JO - Solid State Phenomena

JF - Solid State Phenomena

T2 - 10th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2010

Y2 - 20 September 2010 through 22 September 2010