Suitability of GaAs MESFETs and Si bipolar transistor for low power MMICs: An empirical approach

Esa Kemppinen, Helena Pohjonen, Hannu Ronkainen

    Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

    Original languageEnglish
    Title of host publicationXIX Convention on Radio Science
    Subtitle of host publicationAbstracts of papers
    EditorsVeikko Porra, Petteri Alinikkula
    Place of PublicationEspoo
    PublisherHelsinki University of Technology
    Pages83-84
    ISBN (Print)951-22-1786-4
    Publication statusPublished - 1993
    MoE publication typeNot Eligible
    EventURSI/IEEE XIX National Convention on Radio Science - Espoo, Finland
    Duration: 25 Oct 199326 Oct 1993

    Publication series

    SeriesHelsinki University of Technology: Electronic Circuit Design Laboratory. Report Series
    Volume21
    ISSN0783-9448

    Conference

    ConferenceURSI/IEEE XIX National Convention on Radio Science
    CountryFinland
    CityEspoo
    Period25/10/9326/10/93

    Cite this

    Kemppinen, E., Pohjonen, H., & Ronkainen, H. (1993). Suitability of GaAs MESFETs and Si bipolar transistor for low power MMICs: An empirical approach. In V. Porra, & P. Alinikkula (Eds.), XIX Convention on Radio Science: Abstracts of papers (pp. 83-84). Helsinki University of Technology. Helsinki University of Technology: Electronic Circuit Design Laboratory. Report Series, Vol.. 21