Superconducting device

Jukka-Pekka Kaikkonen

Superconducting device

Jukka-Pekka Kaikkonen (Inventor)

BA6208 Quantum computing hardware

Research output: Patent › Patent

Abstract

According to an example aspect of the present invention, there is provided a superconducting device comprising a silicon substrate (101), a superconducting layer (110) directly on a first face (101a) of the silicon substrate (101), the superconducting layer (110) covering a part, but not all, of the first face (101a) of the silicon substrate (101), and a silicon nitride layer (109) directly covering at least one part of the first face (101a) of the silicon substrate (101) which is not covered by the superconducting layer (110).

Patent family as of 14.7.2026
AU2024275160 AA, AU2024275160 BB, CA3293169 AA, EP4706354 A1, FI131716 B, FI20235579 A, WO24240987 A1

Original language	English
Patent number	FI 131716 B1
IPC	H01L25/065
Priority date	24/05/23
Filing date	24/05/23
Publication status	Published - 13 Oct 2025
MoE publication type	H1 Granted patent

Cite this

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abstract = "According to an example aspect of the present invention, there is provided a superconducting device comprising a silicon substrate (101), a superconducting layer (110) directly on a first face (101a) of the silicon substrate (101), the superconducting layer (110) covering a part, but not all, of the first face (101a) of the silicon substrate (101), and a silicon nitride layer (109) directly covering at least one part of the first face (101a) of the silicon substrate (101) which is not covered by the superconducting layer (110). Patent family as of 14.7.2026 AU2024275160 AA, AU2024275160 BB, CA3293169 AA, EP4706354 A1, FI131716 B, FI20235579 A, WO24240987 A1",

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AB - According to an example aspect of the present invention, there is provided a superconducting device comprising a silicon substrate (101), a superconducting layer (110) directly on a first face (101a) of the silicon substrate (101), the superconducting layer (110) covering a part, but not all, of the first face (101a) of the silicon substrate (101), and a silicon nitride layer (109) directly covering at least one part of the first face (101a) of the silicon substrate (101) which is not covered by the superconducting layer (110). Patent family as of 14.7.2026 AU2024275160 AA, AU2024275160 BB, CA3293169 AA, EP4706354 A1, FI131716 B, FI20235579 A, WO24240987 A1

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M3 - Patent

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Y2 - 2023/05/24

ER -

Superconducting device

Abstract

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