Superconducting platinum silicide for electron cooling in silicon

M.J. Prest (Corresponding Author), J.S. Richardson-Bullock, Q.T. Zhao, J. Muhonen, David Gunnarsson, Mika Prunnila, V.A. Shah, T.E. Whall, E.H.C. Parker, D.R. Leadley

Research output: Contribution to journalArticleScientificpeer-review

Abstract

We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K by using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures. We use an electron cooling model to infer that electrons in silicon are cooled from 100 mK to 50 mK in such a device.
Original languageEnglish
Pages (from-to)15-18
JournalSolid-State Electronics
Volume103
DOIs
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

Fingerprint

Silicon
Platinum
platinum
Cooling
cooling
Electrons
silicon
electrons
high energy electrons
critical temperature
Superconducting materials
thin films
Thin films
Temperature

Keywords

  • silicides
  • silicon
  • superconducting materials
  • electron cooling
  • low temperatures

Cite this

Prest, M. J., Richardson-Bullock, J. S., Zhao, Q. T., Muhonen, J., Gunnarsson, D., Prunnila, M., ... Leadley, D. R. (2015). Superconducting platinum silicide for electron cooling in silicon. Solid-State Electronics, 103, 15-18. https://doi.org/10.1016/j.sse.2014.09.003
Prest, M.J. ; Richardson-Bullock, J.S. ; Zhao, Q.T. ; Muhonen, J. ; Gunnarsson, David ; Prunnila, Mika ; Shah, V.A. ; Whall, T.E. ; Parker, E.H.C. ; Leadley, D.R. / Superconducting platinum silicide for electron cooling in silicon. In: Solid-State Electronics. 2015 ; Vol. 103. pp. 15-18.
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Prest, MJ, Richardson-Bullock, JS, Zhao, QT, Muhonen, J, Gunnarsson, D, Prunnila, M, Shah, VA, Whall, TE, Parker, EHC & Leadley, DR 2015, 'Superconducting platinum silicide for electron cooling in silicon', Solid-State Electronics, vol. 103, pp. 15-18. https://doi.org/10.1016/j.sse.2014.09.003

Superconducting platinum silicide for electron cooling in silicon. / Prest, M.J. (Corresponding Author); Richardson-Bullock, J.S.; Zhao, Q.T.; Muhonen, J.; Gunnarsson, David; Prunnila, Mika; Shah, V.A.; Whall, T.E.; Parker, E.H.C.; Leadley, D.R.

In: Solid-State Electronics, Vol. 103, 2015, p. 15-18.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Superconducting platinum silicide for electron cooling in silicon

AU - Prest, M.J.

AU - Richardson-Bullock, J.S.

AU - Zhao, Q.T.

AU - Muhonen, J.

AU - Gunnarsson, David

AU - Prunnila, Mika

AU - Shah, V.A.

AU - Whall, T.E.

AU - Parker, E.H.C.

AU - Leadley, D.R.

PY - 2015

Y1 - 2015

N2 - We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K by using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures. We use an electron cooling model to infer that electrons in silicon are cooled from 100 mK to 50 mK in such a device.

AB - We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K by using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures. We use an electron cooling model to infer that electrons in silicon are cooled from 100 mK to 50 mK in such a device.

KW - silicides

KW - silicon

KW - superconducting materials

KW - electron cooling

KW - low temperatures

U2 - 10.1016/j.sse.2014.09.003

DO - 10.1016/j.sse.2014.09.003

M3 - Article

VL - 103

SP - 15

EP - 18

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

ER -