Superconducting platinum silicide for electron cooling in silicon

M.J. Prest (Corresponding Author), J.S. Richardson-Bullock, Q.T. Zhao, J. Muhonen, David Gunnarsson, Mika Prunnila, V.A. Shah, T.E. Whall, E.H.C. Parker, D.R. Leadley

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K by using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures. We use an electron cooling model to infer that electrons in silicon are cooled from 100 mK to 50 mK in such a device.
    Original languageEnglish
    Pages (from-to)15-18
    JournalSolid-State Electronics
    Volume103
    DOIs
    Publication statusPublished - 2015
    MoE publication typeA1 Journal article-refereed

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    Keywords

    • silicides
    • silicon
    • superconducting materials
    • electron cooling
    • low temperatures

    Cite this

    Prest, M. J., Richardson-Bullock, J. S., Zhao, Q. T., Muhonen, J., Gunnarsson, D., Prunnila, M., Shah, V. A., Whall, T. E., Parker, E. H. C., & Leadley, D. R. (2015). Superconducting platinum silicide for electron cooling in silicon. Solid-State Electronics, 103, 15-18. https://doi.org/10.1016/j.sse.2014.09.003