We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K by using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures. We use an electron cooling model to infer that electrons in silicon are cooled from 100 mK to 50 mK in such a device.
- superconducting materials
- electron cooling
- low temperatures
Prest, M. J., Richardson-Bullock, J. S., Zhao, Q. T., Muhonen, J., Gunnarsson, D., Prunnila, M., Shah, V. A., Whall, T. E., Parker, E. H. C., & Leadley, D. R. (2015). Superconducting platinum silicide for electron cooling in silicon. Solid-State Electronics, 103, 15-18. https://doi.org/10.1016/j.sse.2014.09.003