Superconducting platinum silicide for electron cooling in silicon

M.J. Prest; J.S. Richardson-Bullock; Q.T. Zhao; J. Muhonen; David Gunnarsson; Mika Prunnila; V.A. Shah; T.E. Whall; E.H.C. Parker; D.R. Leadley

doi:10.1016/j.sse.2014.09.003

Superconducting platinum silicide for electron cooling in silicon

M.J. Prest^*, J.S. Richardson-Bullock, Q.T. Zhao, J. Muhonen, David Gunnarsson, Mika Prunnila, V.A. Shah, T.E. Whall, E.H.C. Parker, D.R. Leadley

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K by using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures. We use an electron cooling model to infer that electrons in silicon are cooled from 100 mK to 50 mK in such a device.

Original language	English
Pages (from-to)	15-18
Journal	Solid-State Electronics
Volume	103
DOIs	https://doi.org/10.1016/j.sse.2014.09.003
Publication status	Published - 2015
MoE publication type	A1 Journal article-refereed

Keywords

silicides
silicon
superconducting materials
electron cooling
low temperatures

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10.1016/j.sse.2014.09.003

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title = "Superconducting platinum silicide for electron cooling in silicon",

abstract = "We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K by using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures. We use an electron cooling model to infer that electrons in silicon are cooled from 100 mK to 50 mK in such a device.",

keywords = "silicides, silicon, superconducting materials, electron cooling, low temperatures",

author = "M.J. Prest and J.S. Richardson-Bullock and Q.T. Zhao and J. Muhonen and David Gunnarsson and Mika Prunnila and V.A. Shah and T.E. Whall and E.H.C. Parker and D.R. Leadley",

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T1 - Superconducting platinum silicide for electron cooling in silicon

AU - Prest, M.J.

AU - Richardson-Bullock, J.S.

AU - Zhao, Q.T.

AU - Muhonen, J.

AU - Gunnarsson, David

AU - Prunnila, Mika

AU - Shah, V.A.

AU - Whall, T.E.

AU - Parker, E.H.C.

AU - Leadley, D.R.

PY - 2015

Y1 - 2015

N2 - We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K by using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures. We use an electron cooling model to infer that electrons in silicon are cooled from 100 mK to 50 mK in such a device.

AB - We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K by using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures. We use an electron cooling model to infer that electrons in silicon are cooled from 100 mK to 50 mK in such a device.

KW - silicides

KW - silicon

KW - superconducting materials

KW - electron cooling

KW - low temperatures

U2 - 10.1016/j.sse.2014.09.003

DO - 10.1016/j.sse.2014.09.003

M3 - Article

SN - 0038-1101

VL - 103

SP - 15

EP - 18

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Superconducting platinum silicide for electron cooling in silicon

Abstract

Keywords

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