Superconducting platinum silicide for electron cooling in silicon

M.J. Prest (Corresponding Author), J.S. Richardson-Bullock, Q.T. Zhao, J. Muhonen, David Gunnarsson, Mika Prunnila, V.A. Shah, T.E. Whall, E.H.C. Parker, D.R. Leadley

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K by using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures. We use an electron cooling model to infer that electrons in silicon are cooled from 100 mK to 50 mK in such a device.
    Original languageEnglish
    Pages (from-to)15-18
    JournalSolid-State Electronics
    Volume103
    DOIs
    Publication statusPublished - 2015
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Silicon
    Platinum
    platinum
    Cooling
    cooling
    Electrons
    silicon
    electrons
    high energy electrons
    critical temperature
    Superconducting materials
    thin films
    Thin films
    Temperature

    Keywords

    • silicides
    • silicon
    • superconducting materials
    • electron cooling
    • low temperatures

    Cite this

    Prest, M. J., Richardson-Bullock, J. S., Zhao, Q. T., Muhonen, J., Gunnarsson, D., Prunnila, M., ... Leadley, D. R. (2015). Superconducting platinum silicide for electron cooling in silicon. Solid-State Electronics, 103, 15-18. https://doi.org/10.1016/j.sse.2014.09.003
    Prest, M.J. ; Richardson-Bullock, J.S. ; Zhao, Q.T. ; Muhonen, J. ; Gunnarsson, David ; Prunnila, Mika ; Shah, V.A. ; Whall, T.E. ; Parker, E.H.C. ; Leadley, D.R. / Superconducting platinum silicide for electron cooling in silicon. In: Solid-State Electronics. 2015 ; Vol. 103. pp. 15-18.
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    abstract = "We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K by using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures. We use an electron cooling model to infer that electrons in silicon are cooled from 100 mK to 50 mK in such a device.",
    keywords = "silicides, silicon, superconducting materials, electron cooling, low temperatures",
    author = "M.J. Prest and J.S. Richardson-Bullock and Q.T. Zhao and J. Muhonen and David Gunnarsson and Mika Prunnila and V.A. Shah and T.E. Whall and E.H.C. Parker and D.R. Leadley",
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    Prest, MJ, Richardson-Bullock, JS, Zhao, QT, Muhonen, J, Gunnarsson, D, Prunnila, M, Shah, VA, Whall, TE, Parker, EHC & Leadley, DR 2015, 'Superconducting platinum silicide for electron cooling in silicon', Solid-State Electronics, vol. 103, pp. 15-18. https://doi.org/10.1016/j.sse.2014.09.003

    Superconducting platinum silicide for electron cooling in silicon. / Prest, M.J. (Corresponding Author); Richardson-Bullock, J.S.; Zhao, Q.T.; Muhonen, J.; Gunnarsson, David; Prunnila, Mika; Shah, V.A.; Whall, T.E.; Parker, E.H.C.; Leadley, D.R.

    In: Solid-State Electronics, Vol. 103, 2015, p. 15-18.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Superconducting platinum silicide for electron cooling in silicon

    AU - Prest, M.J.

    AU - Richardson-Bullock, J.S.

    AU - Zhao, Q.T.

    AU - Muhonen, J.

    AU - Gunnarsson, David

    AU - Prunnila, Mika

    AU - Shah, V.A.

    AU - Whall, T.E.

    AU - Parker, E.H.C.

    AU - Leadley, D.R.

    PY - 2015

    Y1 - 2015

    N2 - We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K by using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures. We use an electron cooling model to infer that electrons in silicon are cooled from 100 mK to 50 mK in such a device.

    AB - We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K by using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures. We use an electron cooling model to infer that electrons in silicon are cooled from 100 mK to 50 mK in such a device.

    KW - silicides

    KW - silicon

    KW - superconducting materials

    KW - electron cooling

    KW - low temperatures

    U2 - 10.1016/j.sse.2014.09.003

    DO - 10.1016/j.sse.2014.09.003

    M3 - Article

    VL - 103

    SP - 15

    EP - 18

    JO - Solid-State Electronics

    JF - Solid-State Electronics

    SN - 0038-1101

    ER -