Superconducting TiN through-silicon-vias for quantum technology

Kestutis Grigoras; Slawomir Simbierowicz; Leif Grönberg; Joonas Govenius; Visa Vesterinen; Mika Prunnila; Juha Hassel

doi:10.1109/EPTC47984.2019.9026646

Superconducting TiN through-silicon-vias for quantum technology

Kestutis Grigoras (Corresponding author), Slawomir Simbierowicz, Leif Grönberg, Joonas Govenius, Visa Vesterinen, Mika Prunnila, Juha Hassel

BA6208 Quantum computing hardware

IQM Finland Oy

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

7 Citations (Scopus)

Abstract

Through-silicon vias (TSVs) can be used to route signals and to obtain effective grounding in microwave circuits. The coating of the TSVs with a superconducting material is a challenge because of the high aspect ratio of the structures. In this paper, we present successful fabrication of superconducting 60μm diameter TSVs, coated by atomic layer deposition (ALD) of titanium nitride. The critical temperature T_c is approximately 1.6 K.

Original language	English
Title of host publication	2019 IEEE 21st Electronics Packaging Technology Conference, EPTC 2019
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	81-82
ISBN (Electronic)	978-1-7281-3835-0
DOIs	https://doi.org/10.1109/EPTC47984.2019.9026646
Publication status	Published - Dec 2019
MoE publication type	A4 Article in a conference publication
Event	21st IEEE Electronics Packaging Technology Conference, EPTC 2019 - Singapore, Singapore Duration: 4 Dec 2019 → 6 Dec 2019

Conference

Conference	21st IEEE Electronics Packaging Technology Conference, EPTC 2019
Country/Territory	Singapore
City	Singapore
Period	4/12/19 → 6/12/19

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10.1109/EPTC47984.2019.9026646

Cite this

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title = "Superconducting TiN through-silicon-vias for quantum technology",

abstract = "Through-silicon vias (TSVs) can be used to route signals and to obtain effective grounding in microwave circuits. The coating of the TSVs with a superconducting material is a challenge because of the high aspect ratio of the structures. In this paper, we present successful fabrication of superconducting 60μm diameter TSVs, coated by atomic layer deposition (ALD) of titanium nitride. The critical temperature Tc is approximately 1.6 K.",

author = "Kestutis Grigoras and Slawomir Simbierowicz and Leif Gr{\"o}nberg and Joonas Govenius and Visa Vesterinen and Mika Prunnila and Juha Hassel",

note = "Funding Information: We acknowledge Paula Holmlund for technical assistance. This work was supported by the EU Flagship on Quantum Technology project OpenSuperQ (820363). Publisher Copyright: {\textcopyright} 2019 IEEE.; 21st IEEE Electronics Packaging Technology Conference, EPTC 2019 ; Conference date: 04-12-2019 Through 06-12-2019",

year = "2019",

month = dec,

doi = "10.1109/EPTC47984.2019.9026646",

language = "English",

pages = "81--82",

booktitle = "2019 IEEE 21st Electronics Packaging Technology Conference, EPTC 2019",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Grigoras, K, Simbierowicz, S, Grönberg, L, Govenius, J, Vesterinen, V, Prunnila, M & Hassel, J 2019, Superconducting TiN through-silicon-vias for quantum technology. in 2019 IEEE 21st Electronics Packaging Technology Conference, EPTC 2019. IEEE Institute of Electrical and Electronic Engineers, pp. 81-82, 21st IEEE Electronics Packaging Technology Conference, EPTC 2019, Singapore, Singapore, 4/12/19. https://doi.org/10.1109/EPTC47984.2019.9026646

Superconducting TiN through-silicon-vias for quantum technology. / Grigoras, Kestutis (Corresponding author); Simbierowicz, Slawomir; Grönberg, Leif et al.
2019 IEEE 21st Electronics Packaging Technology Conference, EPTC 2019. IEEE Institute of Electrical and Electronic Engineers, 2019. p. 81-82.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Superconducting TiN through-silicon-vias for quantum technology

AU - Grigoras, Kestutis

AU - Simbierowicz, Slawomir

AU - Grönberg, Leif

AU - Govenius, Joonas

AU - Vesterinen, Visa

AU - Prunnila, Mika

AU - Hassel, Juha

N1 - Funding Information: We acknowledge Paula Holmlund for technical assistance. This work was supported by the EU Flagship on Quantum Technology project OpenSuperQ (820363). Publisher Copyright: © 2019 IEEE.

PY - 2019/12

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N2 - Through-silicon vias (TSVs) can be used to route signals and to obtain effective grounding in microwave circuits. The coating of the TSVs with a superconducting material is a challenge because of the high aspect ratio of the structures. In this paper, we present successful fabrication of superconducting 60μm diameter TSVs, coated by atomic layer deposition (ALD) of titanium nitride. The critical temperature Tc is approximately 1.6 K.

AB - Through-silicon vias (TSVs) can be used to route signals and to obtain effective grounding in microwave circuits. The coating of the TSVs with a superconducting material is a challenge because of the high aspect ratio of the structures. In this paper, we present successful fabrication of superconducting 60μm diameter TSVs, coated by atomic layer deposition (ALD) of titanium nitride. The critical temperature Tc is approximately 1.6 K.

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U2 - 10.1109/EPTC47984.2019.9026646

DO - 10.1109/EPTC47984.2019.9026646

M3 - Conference article in proceedings

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EP - 82

BT - 2019 IEEE 21st Electronics Packaging Technology Conference, EPTC 2019

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 21st IEEE Electronics Packaging Technology Conference, EPTC 2019

Y2 - 4 December 2019 through 6 December 2019

ER -

Superconducting TiN through-silicon-vias for quantum technology

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