Superconducting TiN through-silicon-vias for quantum technology

K. Grigoras (Corresponding author), S. Simbierowicz, L. Gronberg, J. Govenius, V. Vesterinen, M. Prunnila, J. Hassel

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

2 Citations (Scopus)

Abstract

Through-silicon vias (TSVs) can be used to route signals and to obtain effective grounding in microwave circuits. The coating of the TSVs with a superconducting material is a challenge because of the high aspect ratio of the structures. In this paper, we present successful fabrication of superconducting 60μm diameter TSVs, coated by atomic layer deposition (ALD) of titanium nitride. The critical temperature Tc is approximately 1.6 K.

Original languageEnglish
Title of host publication2019 IEEE 21st Electronics Packaging Technology Conference, EPTC 2019
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages81-82
Number of pages2
ISBN (Electronic)978-1-7281-3835-0
DOIs
Publication statusPublished - Dec 2019
MoE publication typeA4 Article in a conference publication
Event21st IEEE Electronics Packaging Technology Conference, EPTC 2019 - Singapore, Singapore
Duration: 4 Dec 20196 Dec 2019

Conference

Conference21st IEEE Electronics Packaging Technology Conference, EPTC 2019
Country/TerritorySingapore
CitySingapore
Period4/12/196/12/19

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