Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well

J. Pakarinen (Corresponding Author), C. S. Peng, V. Polojärvi, A. Tukiainen, V.-M. Korpijärvi, J. Puustinen, M. Pessa, P. Laukkanen, Jari Likonen, E. Arola

    Research output: Contribution to journalArticleScientificpeer-review

    9 Citations (Scopus)

    Abstract

    The authors report on an interesting observation regarding thermal annealing of a beryllium-doped Ga0.65In0.35As0.99N0.01/GaAs quantum well (QW) grown by molecular beam epitaxy. A QW doped at 6×1019 cm−3 exhibited superior thermal properties and about six times larger photoluminescence than an undoped QW of the same structure. X-ray diffraction and secondary ion mass spectrometry provided evidence that beryllium suppressed indium diffusion and stabilized (metastable) dilute nitride heterostructure upon annealing.
    Original languageEnglish
    Article number052102
    Number of pages3
    JournalApplied Physics Letters
    Volume93
    Issue number5
    DOIs
    Publication statusPublished - 2008
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    retarding
    quantum wells
    beryllium
    annealing
    secondary ion mass spectrometry
    nitrides
    indium
    molecular beam epitaxy
    thermodynamic properties
    photoluminescence
    diffraction
    x rays

    Cite this

    Pakarinen, J., Peng, C. S., Polojärvi, V., Tukiainen, A., Korpijärvi, V-M., Puustinen, J., ... Arola, E. (2008). Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well. Applied Physics Letters, 93(5), [052102]. https://doi.org/10.1063/1.2966146
    Pakarinen, J. ; Peng, C. S. ; Polojärvi, V. ; Tukiainen, A. ; Korpijärvi, V.-M. ; Puustinen, J. ; Pessa, M. ; Laukkanen, P. ; Likonen, Jari ; Arola, E. / Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well. In: Applied Physics Letters. 2008 ; Vol. 93, No. 5.
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    title = "Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well",
    abstract = "The authors report on an interesting observation regarding thermal annealing of a beryllium-doped Ga0.65In0.35As0.99N0.01/GaAs quantum well (QW) grown by molecular beam epitaxy. A QW doped at 6×1019 cm−3 exhibited superior thermal properties and about six times larger photoluminescence than an undoped QW of the same structure. X-ray diffraction and secondary ion mass spectrometry provided evidence that beryllium suppressed indium diffusion and stabilized (metastable) dilute nitride heterostructure upon annealing.",
    author = "J. Pakarinen and Peng, {C. S.} and V. Poloj{\"a}rvi and A. Tukiainen and V.-M. Korpij{\"a}rvi and J. Puustinen and M. Pessa and P. Laukkanen and Jari Likonen and E. Arola",
    year = "2008",
    doi = "10.1063/1.2966146",
    language = "English",
    volume = "93",
    journal = "Applied Physics Letters",
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    Pakarinen, J, Peng, CS, Polojärvi, V, Tukiainen, A, Korpijärvi, V-M, Puustinen, J, Pessa, M, Laukkanen, P, Likonen, J & Arola, E 2008, 'Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well', Applied Physics Letters, vol. 93, no. 5, 052102. https://doi.org/10.1063/1.2966146

    Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well. / Pakarinen, J. (Corresponding Author); Peng, C. S.; Polojärvi, V.; Tukiainen, A.; Korpijärvi, V.-M.; Puustinen, J.; Pessa, M.; Laukkanen, P.; Likonen, Jari; Arola, E.

    In: Applied Physics Letters, Vol. 93, No. 5, 052102, 2008.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well

    AU - Pakarinen, J.

    AU - Peng, C. S.

    AU - Polojärvi, V.

    AU - Tukiainen, A.

    AU - Korpijärvi, V.-M.

    AU - Puustinen, J.

    AU - Pessa, M.

    AU - Laukkanen, P.

    AU - Likonen, Jari

    AU - Arola, E.

    PY - 2008

    Y1 - 2008

    N2 - The authors report on an interesting observation regarding thermal annealing of a beryllium-doped Ga0.65In0.35As0.99N0.01/GaAs quantum well (QW) grown by molecular beam epitaxy. A QW doped at 6×1019 cm−3 exhibited superior thermal properties and about six times larger photoluminescence than an undoped QW of the same structure. X-ray diffraction and secondary ion mass spectrometry provided evidence that beryllium suppressed indium diffusion and stabilized (metastable) dilute nitride heterostructure upon annealing.

    AB - The authors report on an interesting observation regarding thermal annealing of a beryllium-doped Ga0.65In0.35As0.99N0.01/GaAs quantum well (QW) grown by molecular beam epitaxy. A QW doped at 6×1019 cm−3 exhibited superior thermal properties and about six times larger photoluminescence than an undoped QW of the same structure. X-ray diffraction and secondary ion mass spectrometry provided evidence that beryllium suppressed indium diffusion and stabilized (metastable) dilute nitride heterostructure upon annealing.

    U2 - 10.1063/1.2966146

    DO - 10.1063/1.2966146

    M3 - Article

    VL - 93

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 5

    M1 - 052102

    ER -

    Pakarinen J, Peng CS, Polojärvi V, Tukiainen A, Korpijärvi V-M, Puustinen J et al. Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well. Applied Physics Letters. 2008;93(5). 052102. https://doi.org/10.1063/1.2966146