Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well

J. Pakarinen (Corresponding Author), C. S. Peng, V. Polojärvi, A. Tukiainen, V.-M. Korpijärvi, J. Puustinen, M. Pessa, P. Laukkanen, Jari Likonen, E. Arola

Research output: Contribution to journalArticleScientificpeer-review

9 Citations (Scopus)

Abstract

The authors report on an interesting observation regarding thermal annealing of a beryllium-doped Ga0.65In0.35As0.99N0.01/GaAs quantum well (QW) grown by molecular beam epitaxy. A QW doped at 6×1019 cm−3 exhibited superior thermal properties and about six times larger photoluminescence than an undoped QW of the same structure. X-ray diffraction and secondary ion mass spectrometry provided evidence that beryllium suppressed indium diffusion and stabilized (metastable) dilute nitride heterostructure upon annealing.
Original languageEnglish
Article number052102
Number of pages3
JournalApplied Physics Letters
Volume93
Issue number5
DOIs
Publication statusPublished - 2008
MoE publication typeA1 Journal article-refereed

Fingerprint

retarding
quantum wells
beryllium
annealing
secondary ion mass spectrometry
nitrides
indium
molecular beam epitaxy
thermodynamic properties
photoluminescence
diffraction
x rays

Cite this

Pakarinen, J., Peng, C. S., Polojärvi, V., Tukiainen, A., Korpijärvi, V-M., Puustinen, J., ... Arola, E. (2008). Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well. Applied Physics Letters, 93(5), [052102]. https://doi.org/10.1063/1.2966146
Pakarinen, J. ; Peng, C. S. ; Polojärvi, V. ; Tukiainen, A. ; Korpijärvi, V.-M. ; Puustinen, J. ; Pessa, M. ; Laukkanen, P. ; Likonen, Jari ; Arola, E. / Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well. In: Applied Physics Letters. 2008 ; Vol. 93, No. 5.
@article{a254248933704dc8862967225effbb2e,
title = "Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well",
abstract = "The authors report on an interesting observation regarding thermal annealing of a beryllium-doped Ga0.65In0.35As0.99N0.01/GaAs quantum well (QW) grown by molecular beam epitaxy. A QW doped at 6×1019 cm−3 exhibited superior thermal properties and about six times larger photoluminescence than an undoped QW of the same structure. X-ray diffraction and secondary ion mass spectrometry provided evidence that beryllium suppressed indium diffusion and stabilized (metastable) dilute nitride heterostructure upon annealing.",
author = "J. Pakarinen and Peng, {C. S.} and V. Poloj{\"a}rvi and A. Tukiainen and V.-M. Korpij{\"a}rvi and J. Puustinen and M. Pessa and P. Laukkanen and Jari Likonen and E. Arola",
year = "2008",
doi = "10.1063/1.2966146",
language = "English",
volume = "93",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "5",

}

Pakarinen, J, Peng, CS, Polojärvi, V, Tukiainen, A, Korpijärvi, V-M, Puustinen, J, Pessa, M, Laukkanen, P, Likonen, J & Arola, E 2008, 'Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well', Applied Physics Letters, vol. 93, no. 5, 052102. https://doi.org/10.1063/1.2966146

Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well. / Pakarinen, J. (Corresponding Author); Peng, C. S.; Polojärvi, V.; Tukiainen, A.; Korpijärvi, V.-M.; Puustinen, J.; Pessa, M.; Laukkanen, P.; Likonen, Jari; Arola, E.

In: Applied Physics Letters, Vol. 93, No. 5, 052102, 2008.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well

AU - Pakarinen, J.

AU - Peng, C. S.

AU - Polojärvi, V.

AU - Tukiainen, A.

AU - Korpijärvi, V.-M.

AU - Puustinen, J.

AU - Pessa, M.

AU - Laukkanen, P.

AU - Likonen, Jari

AU - Arola, E.

PY - 2008

Y1 - 2008

N2 - The authors report on an interesting observation regarding thermal annealing of a beryllium-doped Ga0.65In0.35As0.99N0.01/GaAs quantum well (QW) grown by molecular beam epitaxy. A QW doped at 6×1019 cm−3 exhibited superior thermal properties and about six times larger photoluminescence than an undoped QW of the same structure. X-ray diffraction and secondary ion mass spectrometry provided evidence that beryllium suppressed indium diffusion and stabilized (metastable) dilute nitride heterostructure upon annealing.

AB - The authors report on an interesting observation regarding thermal annealing of a beryllium-doped Ga0.65In0.35As0.99N0.01/GaAs quantum well (QW) grown by molecular beam epitaxy. A QW doped at 6×1019 cm−3 exhibited superior thermal properties and about six times larger photoluminescence than an undoped QW of the same structure. X-ray diffraction and secondary ion mass spectrometry provided evidence that beryllium suppressed indium diffusion and stabilized (metastable) dilute nitride heterostructure upon annealing.

U2 - 10.1063/1.2966146

DO - 10.1063/1.2966146

M3 - Article

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

M1 - 052102

ER -

Pakarinen J, Peng CS, Polojärvi V, Tukiainen A, Korpijärvi V-M, Puustinen J et al. Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well. Applied Physics Letters. 2008;93(5). 052102. https://doi.org/10.1063/1.2966146