Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well

J. Pakarinen (Corresponding Author), C. S. Peng, V. Polojärvi, A. Tukiainen, V.-M. Korpijärvi, J. Puustinen, M. Pessa, P. Laukkanen, Jari Likonen, E. Arola

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    Abstract

    The authors report on an interesting observation regarding thermal annealing of a beryllium-doped Ga0.65In0.35As0.99N0.01/GaAs quantum well (QW) grown by molecular beam epitaxy. A QW doped at 6×1019 cm−3 exhibited superior thermal properties and about six times larger photoluminescence than an undoped QW of the same structure. X-ray diffraction and secondary ion mass spectrometry provided evidence that beryllium suppressed indium diffusion and stabilized (metastable) dilute nitride heterostructure upon annealing.
    Original languageEnglish
    Article number052102
    Number of pages3
    JournalApplied Physics Letters
    Volume93
    Issue number5
    DOIs
    Publication statusPublished - 2008
    MoE publication typeA1 Journal article-refereed

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    Pakarinen, J., Peng, C. S., Polojärvi, V., Tukiainen, A., Korpijärvi, V-M., Puustinen, J., Pessa, M., Laukkanen, P., Likonen, J., & Arola, E. (2008). Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well. Applied Physics Letters, 93(5), [052102]. https://doi.org/10.1063/1.2966146