Abstract
The authors report on an interesting observation regarding thermal annealing of a beryllium-doped Ga0.65In0.35As0.99N0.01/GaAs quantum well (QW) grown by molecular beam epitaxy. A QW doped at 6×1019 cm−3 exhibited superior thermal properties and about six times larger photoluminescence than an undoped QW of the same structure. X-ray diffraction and secondary ion mass spectrometry provided evidence that beryllium suppressed indium diffusion and stabilized (metastable) dilute nitride heterostructure upon annealing.
Original language | English |
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Article number | 052102 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 93 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2008 |
MoE publication type | A1 Journal article-refereed |