Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well

J. Pakarinen; C.S. Peng; V. Polojärvi; A. Tukiainen; V.-M. Korpijärvi; J. Puustinen; M. Pessa; P. Laukkanen; Jari Likonen; E. Arola

doi:10.1063/1.2966146

Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well

J. Pakarinen^*, C.S. Peng, V. Polojärvi, A. Tukiainen, V.-M. Korpijärvi, J. Puustinen, M. Pessa, P. Laukkanen, Jari Likonen, E. Arola

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

The authors report on an interesting observation regarding thermal annealing of a beryllium-doped Ga_0.65In_0.35As_0.99N_0.01/GaAs quantum well (QW) grown by molecular beam epitaxy. A QW doped at 6×10¹⁹ cm⁻³ exhibited superior thermal properties and about six times larger photoluminescence than an undoped QW of the same structure. X-ray diffraction and secondary ion mass spectrometry provided evidence that beryllium suppressed indium diffusion and stabilized (metastable) dilute nitride heterostructure upon annealing.

Original language	English
Article number	052102
Number of pages	3
Journal	Applied Physics Letters
Volume	93
Issue number	5
DOIs	https://doi.org/10.1063/1.2966146
Publication status	Published - 2008
MoE publication type	A1 Journal article-refereed

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@article{a254248933704dc8862967225effbb2e,

title = "Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well",

abstract = "The authors report on an interesting observation regarding thermal annealing of a beryllium-doped Ga0.65In0.35As0.99N0.01/GaAs quantum well (QW) grown by molecular beam epitaxy. A QW doped at 6×1019 cm−3 exhibited superior thermal properties and about six times larger photoluminescence than an undoped QW of the same structure. X-ray diffraction and secondary ion mass spectrometry provided evidence that beryllium suppressed indium diffusion and stabilized (metastable) dilute nitride heterostructure upon annealing.",

author = "J. Pakarinen and C.S. Peng and V. Poloj{\"a}rvi and A. Tukiainen and V.-M. Korpij{\"a}rvi and J. Puustinen and M. Pessa and P. Laukkanen and Jari Likonen and E. Arola",

year = "2008",

doi = "10.1063/1.2966146",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "5",

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TY - JOUR

T1 - Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well

AU - Pakarinen, J.

AU - Peng, C.S.

AU - Polojärvi, V.

AU - Tukiainen, A.

AU - Korpijärvi, V.-M.

AU - Puustinen, J.

AU - Pessa, M.

AU - Laukkanen, P.

AU - Likonen, Jari

AU - Arola, E.

PY - 2008

Y1 - 2008

N2 - The authors report on an interesting observation regarding thermal annealing of a beryllium-doped Ga0.65In0.35As0.99N0.01/GaAs quantum well (QW) grown by molecular beam epitaxy. A QW doped at 6×1019 cm−3 exhibited superior thermal properties and about six times larger photoluminescence than an undoped QW of the same structure. X-ray diffraction and secondary ion mass spectrometry provided evidence that beryllium suppressed indium diffusion and stabilized (metastable) dilute nitride heterostructure upon annealing.

AB - The authors report on an interesting observation regarding thermal annealing of a beryllium-doped Ga0.65In0.35As0.99N0.01/GaAs quantum well (QW) grown by molecular beam epitaxy. A QW doped at 6×1019 cm−3 exhibited superior thermal properties and about six times larger photoluminescence than an undoped QW of the same structure. X-ray diffraction and secondary ion mass spectrometry provided evidence that beryllium suppressed indium diffusion and stabilized (metastable) dilute nitride heterostructure upon annealing.

U2 - 10.1063/1.2966146

DO - 10.1063/1.2966146

M3 - Article

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 052102

ER -

Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well

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