Surface acoustic wave devices on AlN/3C-SiC/Si multilayer structures

Chih-Ming Lin, Yung-Yu Chen, Valery V. Felmetsger, Wei-Cheng Lien, Tommi Riekkinen, Debbie G. Senesky, Albert P. Pisano

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s−1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments.
Original languageEnglish
Article number025019
Number of pages8
JournalJournal of Micromechanics and Microengineering
Volume23
Issue number2
DOIs
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

Fingerprint

Acoustic surface wave devices
Aluminum nitride
Silicon
Multilayers
Thin films
Surface waves
Acoustic wave propagation
Electromechanical coupling
Phase velocity
Epitaxial layers
Full width at half maximum
aluminum nitride
Reactive sputtering
Substrates
Silicon carbide
Magnetron sputtering
Deposits
Annealing

Cite this

Lin, C-M., Chen, Y-Y., Felmetsger, V. V., Lien, W-C., Riekkinen, T., Senesky, D. G., & Pisano, A. P. (2013). Surface acoustic wave devices on AlN/3C-SiC/Si multilayer structures. Journal of Micromechanics and Microengineering, 23(2), [025019]. https://doi.org/10.1088/0960-1317/23/2/025019
Lin, Chih-Ming ; Chen, Yung-Yu ; Felmetsger, Valery V. ; Lien, Wei-Cheng ; Riekkinen, Tommi ; Senesky, Debbie G. ; Pisano, Albert P. / Surface acoustic wave devices on AlN/3C-SiC/Si multilayer structures. In: Journal of Micromechanics and Microengineering. 2013 ; Vol. 23, No. 2.
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title = "Surface acoustic wave devices on AlN/3C-SiC/Si multilayer structures",
abstract = "Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s−1 and an electromechanical coupling coefficient of 0.42{\%}. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments.",
author = "Chih-Ming Lin and Yung-Yu Chen and Felmetsger, {Valery V.} and Wei-Cheng Lien and Tommi Riekkinen and Senesky, {Debbie G.} and Pisano, {Albert P.}",
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Lin, C-M, Chen, Y-Y, Felmetsger, VV, Lien, W-C, Riekkinen, T, Senesky, DG & Pisano, AP 2013, 'Surface acoustic wave devices on AlN/3C-SiC/Si multilayer structures', Journal of Micromechanics and Microengineering, vol. 23, no. 2, 025019. https://doi.org/10.1088/0960-1317/23/2/025019

Surface acoustic wave devices on AlN/3C-SiC/Si multilayer structures. / Lin, Chih-Ming; Chen, Yung-Yu; Felmetsger, Valery V.; Lien, Wei-Cheng; Riekkinen, Tommi; Senesky, Debbie G.; Pisano, Albert P.

In: Journal of Micromechanics and Microengineering, Vol. 23, No. 2, 025019, 2013.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Surface acoustic wave devices on AlN/3C-SiC/Si multilayer structures

AU - Lin, Chih-Ming

AU - Chen, Yung-Yu

AU - Felmetsger, Valery V.

AU - Lien, Wei-Cheng

AU - Riekkinen, Tommi

AU - Senesky, Debbie G.

AU - Pisano, Albert P.

PY - 2013

Y1 - 2013

N2 - Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s−1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments.

AB - Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s−1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments.

U2 - 10.1088/0960-1317/23/2/025019

DO - 10.1088/0960-1317/23/2/025019

M3 - Article

VL - 23

JO - Journal of Micromechanics and Microengineering

JF - Journal of Micromechanics and Microengineering

SN - 0960-1317

IS - 2

M1 - 025019

ER -