Surface plasmon effects on carbon nanotube field effect transistors

T. Isoniemi; Andreas Johansson; T. K. Hakala; M. Rinkiö; Päivi Törmä; J. J. Toppari; H. Kunttu

doi:10.1063/1.3614543

Surface plasmon effects on carbon nanotube field effect transistors

T. Isoniemi^*
, Andreas Johansson
, T. K. Hakala
, M. Rinkiö
, Päivi Törmä
, J. J. Toppari
, H. Kunttu

^*Corresponding author for this work

Not published at VTT

University of Jyväskylä
Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

6 Citations (Scopus)

Abstract

Herein, we experimentally demonstrate surface plasmon polariton (SPP) induced changes in the conductivity of a carbon nanotube field effect transistor (CNT FET). SPP excitation is done via Kretschmann configuration while the measured CNT FET is situated on the opposite side of the metal layer away from the laser, but within reach of the launched SPPs. We observe a shift of ∼0.4 V in effective gate voltage. SPP-intermediated desorption of physisorbed oxygen from the device is discussed as a likely explanation of the observed effect. This effect is visible even at low SPP intensities and within a near-infrared range.

Original language	English
Article number	031105
Journal	Applied Physics Letters
Volume	99
Issue number	3
DOIs	https://doi.org/10.1063/1.3614543
Publication status	Published - 18 Jul 2011
MoE publication type	A1 Journal article-refereed

Funding

This work was supported by the Academy of Finland (Project Nos. 135193, 218182, 130039, 213362, 217045, 135000, 141039) and conducted (see www.esf.org/euryi) as part of a EURYI scheme grant.

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AU - Isoniemi, T.

AU - Johansson, Andreas

AU - Hakala, T. K.

AU - Rinkiö, M.

AU - Törmä, Päivi

AU - Toppari, J. J.

AU - Kunttu, H.

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AB - Herein, we experimentally demonstrate surface plasmon polariton (SPP) induced changes in the conductivity of a carbon nanotube field effect transistor (CNT FET). SPP excitation is done via Kretschmann configuration while the measured CNT FET is situated on the opposite side of the metal layer away from the laser, but within reach of the launched SPPs. We observe a shift of ∼0.4 V in effective gate voltage. SPP-intermediated desorption of physisorbed oxygen from the device is discussed as a likely explanation of the observed effect. This effect is visible even at low SPP intensities and within a near-infrared range.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Surface plasmon effects on carbon nanotube field effect transistors

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