Switched LNAs using GaAs MMIC based RF MEMS switches

R. Malmqvist, C. Samuelsson, D. Smith, Tauno Vähä-Heikkilä, R. Baggen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

1 Citation (Scopus)

Abstract

In this paper, we present small and large signal data of a switched LNA hybrid circuit implemented using a low-loss and high linearity RF MEMS switching network on a GaAs MMIC wafer. The GaAs MEMS based reconfigurable LNA front-end circuit can achieve a 30 dB difference in in-band gain and attenuation (when the switch is turned on and off) while also being able to maintain a high gain (low noise figure) and P1dB compression point in comparison with the standard LNA MMIC used here. (6 refs.)
Original languageEnglish
Title of host publicationProceedings
Subtitle of host publicationInternational Semiconductor Conference, CAS 2010
Place of PublicationPiscataway, NJ, USA
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages283-286
ISBN (Electronic)978-1-4244-5782-3
ISBN (Print)978-1-4244-5783-0
DOIs
Publication statusPublished - 2010
MoE publication typeA4 Article in a conference publication
Event2010 International Semiconductor Conference, CAS 2010 - Sinaia, Romania
Duration: 10 Oct 201013 Oct 2010

Conference

Conference2010 International Semiconductor Conference, CAS 2010
Abbreviated titleCAS 2010
CountryRomania
CitySinaia
Period10/10/1013/10/10

    Fingerprint

Cite this

Malmqvist, R., Samuelsson, C., Smith, D., Vähä-Heikkilä, T., & Baggen, R. (2010). Switched LNAs using GaAs MMIC based RF MEMS switches. In Proceedings: International Semiconductor Conference, CAS 2010 (pp. 283-286). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/SMICND.2010.5650706