Switched LNAs using GaAs MMIC based RF MEMS switches

R. Malmqvist; C. Samuelsson; D. Smith; Tauno Vähä-Heikkilä; R. Baggen

doi:10.1109/SMICND.2010.5650706

Switched LNAs using GaAs MMIC based RF MEMS switches

R. Malmqvist
, C. Samuelsson
, D. Smith
, Tauno Vähä-Heikkilä
, R. Baggen

VTT Technical Research Centre of Finland

Swedish Defence Research Agency
OMMIC
IMST GmbH

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

2 Citations (Scopus)

Abstract

In this paper, we present small and large signal data of a switched LNA hybrid circuit implemented using a low-loss and high linearity RF MEMS switching network on a GaAs MMIC wafer. The GaAs MEMS based reconfigurable LNA front-end circuit can achieve a 30 dB difference in in-band gain and attenuation (when the switch is turned on and off) while also being able to maintain a high gain (low noise figure) and P1dB compression point in comparison with the standard LNA MMIC used here. (6 refs.)

Original language	English
Title of host publication	Proceedings
Subtitle of host publication	International Semiconductor Conference, CAS 2010
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	283-286
ISBN (Electronic)	978-1-4244-5782-3
ISBN (Print)	978-1-4244-5783-0
DOIs	https://doi.org/10.1109/SMICND.2010.5650706
Publication status	Published - 2010
MoE publication type	A4 Article in a conference publication
Event	2010 International Semiconductor Conference, CAS 2010 - Sinaia, Romania Duration: 10 Oct 2010 → 13 Oct 2010

Conference

Conference	2010 International Semiconductor Conference, CAS 2010
Abbreviated title	CAS 2010
Country/Territory	Romania
City	Sinaia
Period	10/10/10 → 13/10/10

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10.1109/SMICND.2010.5650706

Cite this

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title = "Switched LNAs using GaAs MMIC based RF MEMS switches",

abstract = "In this paper, we present small and large signal data of a switched LNA hybrid circuit implemented using a low-loss and high linearity RF MEMS switching network on a GaAs MMIC wafer. The GaAs MEMS based reconfigurable LNA front-end circuit can achieve a 30 dB difference in in-band gain and attenuation (when the switch is turned on and off) while also being able to maintain a high gain (low noise figure) and P1dB compression point in comparison with the standard LNA MMIC used here. (6 refs.)",

author = "R. Malmqvist and C. Samuelsson and D. Smith and Tauno V{\"a}h{\"a}-Heikkil{\"a} and R. Baggen",

year = "2010",

doi = "10.1109/SMICND.2010.5650706",

language = "English",

isbn = "978-1-4244-5783-0",

pages = "283--286",

booktitle = "Proceedings",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "2010 International Semiconductor Conference, CAS 2010, CAS 2010 ; Conference date: 10-10-2010 Through 13-10-2010",

}

Malmqvist, R, Samuelsson, C, Smith, D, Vähä-Heikkilä, T & Baggen, R 2010, Switched LNAs using GaAs MMIC based RF MEMS switches. in Proceedings: International Semiconductor Conference, CAS 2010. IEEE Institute of Electrical and Electronic Engineers, Piscataway, NJ, USA, pp. 283-286, 2010 International Semiconductor Conference, CAS 2010, Sinaia, Romania, 10/10/10. https://doi.org/10.1109/SMICND.2010.5650706

Switched LNAs using GaAs MMIC based RF MEMS switches. / Malmqvist, R.; Samuelsson, C.; Smith, D. et al.
Proceedings: International Semiconductor Conference, CAS 2010. Piscataway, NJ, USA: IEEE Institute of Electrical and Electronic Engineers, 2010. p. 283-286.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Switched LNAs using GaAs MMIC based RF MEMS switches

AU - Malmqvist, R.

AU - Samuelsson, C.

AU - Smith, D.

AU - Vähä-Heikkilä, Tauno

AU - Baggen, R.

PY - 2010

Y1 - 2010

N2 - In this paper, we present small and large signal data of a switched LNA hybrid circuit implemented using a low-loss and high linearity RF MEMS switching network on a GaAs MMIC wafer. The GaAs MEMS based reconfigurable LNA front-end circuit can achieve a 30 dB difference in in-band gain and attenuation (when the switch is turned on and off) while also being able to maintain a high gain (low noise figure) and P1dB compression point in comparison with the standard LNA MMIC used here. (6 refs.)

AB - In this paper, we present small and large signal data of a switched LNA hybrid circuit implemented using a low-loss and high linearity RF MEMS switching network on a GaAs MMIC wafer. The GaAs MEMS based reconfigurable LNA front-end circuit can achieve a 30 dB difference in in-band gain and attenuation (when the switch is turned on and off) while also being able to maintain a high gain (low noise figure) and P1dB compression point in comparison with the standard LNA MMIC used here. (6 refs.)

U2 - 10.1109/SMICND.2010.5650706

DO - 10.1109/SMICND.2010.5650706

M3 - Conference article in proceedings

SN - 978-1-4244-5783-0

SP - 283

EP - 286

BT - Proceedings

PB - IEEE Institute of Electrical and Electronic Engineers

CY - Piscataway, NJ, USA

T2 - 2010 International Semiconductor Conference, CAS 2010

Y2 - 10 October 2010 through 13 October 2010

ER -

Switched LNAs using GaAs MMIC based RF MEMS switches

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