Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN.
- Sakari Sintonen
- , Mariusz Rudzinski
- , Sami Suihkonen
- , Henri Jussila
- , Michael Knetzger
- , Elke Meissner
- , Andreas Danilewsky
- , Turkka O. Tuomi
- , Harri Lipsanen
- Aalto University
- Institute of Electronic Materials Technology
- Fraunhofer Institute for Integrated Systems and Device Technology (IISB)
- University of Freiburg
Research output: Contribution to journal › Article › Scientific › peer-review