Skip to main navigation
Skip to search
Skip to main content
VTT's Research Information Portal Home
Search content at VTT's Research Information Portal
Home
Profiles
Research output
Projects
Datasets
Research units
Research Infrastructures
Activities
Prizes
Press/Media
Impacts
TaC as a diffusion barrier between Si and Cu
Tomi Laurila
, Kejun Zeng
, Jorma K. Kivilahti
, Jyrki Molarius
, Ilkka Suni
VTT Technical Research Centre of Finland
Research output
:
Contribution to journal
›
Article
›
Scientific
›
peer-review
48
Link opens in a new tab
Citations (Scopus)
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'TaC as a diffusion barrier between Si and Cu'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Barrier Layer
100%
Diffusion Barrier
100%
Diffraction
66%
Metallization
66%
Amorphous Layer
66%
Transcranial Alternating Current Stimulation (tACS)
66%
Cu Metallization
66%
TaSi2
66%
Cu3Si
66%
High Stability
33%
Microstructure
33%
Scanning Electron Microscopy
33%
Reaction Mechanism
33%
Sheet Resistance
33%
Rutherford Backscattering Spectrometry
33%
Thermodynamics
33%
Crystallization
33%
Phase Diagram
33%
Resistance Measurement
33%
Ternary System
33%
Transmission Electron Microscopy
33%
Activity Diagram
33%
Protrusion
33%
Ta2O5
33%
Metallization System
33%
Oxygen-rich
33%
Electron Transmission
33%
Cu Diffusion
33%
High Formation Temperature
33%
Cu-phase
33%
INIS
diffusion barriers
100%
tantalum carbides
100%
layers
71%
barrier layer
42%
interfaces
28%
oxygen
28%
x-ray diffraction
28%
silicon carbides
28%
carbon
14%
stability
14%
scanning electron microscopy
14%
microstructure
14%
phase diagrams
14%
diffusion
14%
transmission electron microscopy
14%
diagrams
14%
sheets
14%
thermodynamics
14%
reaction mechanisms
14%
crystallization
14%
rutherford backscattering spectrometry
14%
Material Science
Rutherford Backscattering Spectrometry
100%
Scanning Electron Microscopy
100%
Transmission Electron Microscopy
100%