Tailoring of energy levels in strain-induced quantum dots

Jouni Ahopelto, Markku Sopanen, Harri Lipsanen

    Research output: Contribution to journalArticleScientificpeer-review

    9 Citations (Scopus)

    Abstract

    High-quality strain-induced quantum dots with properties that can be tailored have been fabricated by growing small InP islands on top of an InGaAs/GaAs near-surface quantum well. The quantum dots show small inhomogeneous broadening, and peaks from the ground and excited state transitions are well resolved in the photoluminescence spectra measured from the dots. The depth of the confining potential and the energy level separation can be varied over a relatively wide range from 35 meV to 100 meV and from 7 meV to 25 meV, respectively, by changing the top barrier thickness of the near-surface quantum well and/or the size of the stressor islands.
    Original languageEnglish
    Pages (from-to)1081-1084
    Number of pages4
    JournalJapanese Journal of Applied Physics
    Volume38
    Issue number1
    DOIs
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Electron energy levels
    Semiconductor quantum wells
    Semiconductor quantum dots
    energy levels
    quantum dots
    quantum wells
    Electron transitions
    Excited states
    confining
    Ground state
    Photoluminescence
    potential energy
    photoluminescence
    ground state
    excitation

    Cite this

    Ahopelto, Jouni ; Sopanen, Markku ; Lipsanen, Harri. / Tailoring of energy levels in strain-induced quantum dots. In: Japanese Journal of Applied Physics. 1999 ; Vol. 38, No. 1. pp. 1081-1084.
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    Tailoring of energy levels in strain-induced quantum dots. / Ahopelto, Jouni; Sopanen, Markku; Lipsanen, Harri.

    In: Japanese Journal of Applied Physics, Vol. 38, No. 1, 1999, p. 1081-1084.

    Research output: Contribution to journalArticleScientificpeer-review

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    T1 - Tailoring of energy levels in strain-induced quantum dots

    AU - Ahopelto, Jouni

    AU - Sopanen, Markku

    AU - Lipsanen, Harri

    PY - 1999

    Y1 - 1999

    N2 - High-quality strain-induced quantum dots with properties that can be tailored have been fabricated by growing small InP islands on top of an InGaAs/GaAs near-surface quantum well. The quantum dots show small inhomogeneous broadening, and peaks from the ground and excited state transitions are well resolved in the photoluminescence spectra measured from the dots. The depth of the confining potential and the energy level separation can be varied over a relatively wide range from 35 meV to 100 meV and from 7 meV to 25 meV, respectively, by changing the top barrier thickness of the near-surface quantum well and/or the size of the stressor islands.

    AB - High-quality strain-induced quantum dots with properties that can be tailored have been fabricated by growing small InP islands on top of an InGaAs/GaAs near-surface quantum well. The quantum dots show small inhomogeneous broadening, and peaks from the ground and excited state transitions are well resolved in the photoluminescence spectra measured from the dots. The depth of the confining potential and the energy level separation can be varied over a relatively wide range from 35 meV to 100 meV and from 7 meV to 25 meV, respectively, by changing the top barrier thickness of the near-surface quantum well and/or the size of the stressor islands.

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    DO - 10.1143/JJAP.38.1081

    M3 - Article

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    EP - 1084

    JO - Japanese Journal of Applied Physics

    JF - Japanese Journal of Applied Physics

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