Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 1081-1084 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 38 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1999 |
| MoE publication type | A1 Journal article-refereed |
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Tailoring of energy levels in strain-induced quantum dots. / Ahopelto, Jouni; Sopanen, Markku; Lipsanen, Harri.
In: Japanese Journal of Applied Physics, Vol. 38, No. 1, 1999, p. 1081-1084.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Tailoring of energy levels in strain-induced quantum dots
AU - Ahopelto, Jouni
AU - Sopanen, Markku
AU - Lipsanen, Harri
PY - 1999
Y1 - 1999
N2 - High-quality strain-induced quantum dots with properties that can be tailored have been fabricated by growing small InP islands on top of an InGaAs/GaAs near-surface quantum well. The quantum dots show small inhomogeneous broadening, and peaks from the ground and excited state transitions are well resolved in the photoluminescence spectra measured from the dots. The depth of the confining potential and the energy level separation can be varied over a relatively wide range from 35 meV to 100 meV and from 7 meV to 25 meV, respectively, by changing the top barrier thickness of the near-surface quantum well and/or the size of the stressor islands.
AB - High-quality strain-induced quantum dots with properties that can be tailored have been fabricated by growing small InP islands on top of an InGaAs/GaAs near-surface quantum well. The quantum dots show small inhomogeneous broadening, and peaks from the ground and excited state transitions are well resolved in the photoluminescence spectra measured from the dots. The depth of the confining potential and the energy level separation can be varied over a relatively wide range from 35 meV to 100 meV and from 7 meV to 25 meV, respectively, by changing the top barrier thickness of the near-surface quantum well and/or the size of the stressor islands.
U2 - 10.1143/JJAP.38.1081
DO - 10.1143/JJAP.38.1081
M3 - Article
VL - 38
SP - 1081
EP - 1084
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 1
ER -