Tailoring of energy levels in strain-induced quantum dots

Jouni Ahopelto, Markku Sopanen, Harri Lipsanen

    Research output: Contribution to journalArticleScientificpeer-review

    9 Citations (Scopus)


    High-quality strain-induced quantum dots with properties that can be tailored have been fabricated by growing small InP islands on top of an InGaAs/GaAs near-surface quantum well. The quantum dots show small inhomogeneous broadening, and peaks from the ground and excited state transitions are well resolved in the photoluminescence spectra measured from the dots. The depth of the confining potential and the energy level separation can be varied over a relatively wide range from 35 meV to 100 meV and from 7 meV to 25 meV, respectively, by changing the top barrier thickness of the near-surface quantum well and/or the size of the stressor islands.
    Original languageEnglish
    Pages (from-to)1081-1084
    Number of pages4
    JournalJapanese Journal of Applied Physics
    Issue number1
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed


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