Tailoring of energy levels in strain-induced quantum dots

Jouni Ahopelto, Markku Sopanen, Harri Lipsanen

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)

Abstract

High-quality strain-induced quantum dots with properties that can be tailored have been fabricated by growing small InP islands on top of an InGaAs/GaAs near-surface quantum well. The quantum dots show small inhomogeneous broadening, and peaks from the ground and excited state transitions are well resolved in the photoluminescence spectra measured from the dots. The depth of the confining potential and the energy level separation can be varied over a relatively wide range from 35 meV to 100 meV and from 7 meV to 25 meV, respectively, by changing the top barrier thickness of the near-surface quantum well and/or the size of the stressor islands.
Original languageEnglish
Pages (from-to)1081-1084
Number of pages4
JournalJapanese Journal of Applied Physics
Volume38
Issue number1
DOIs
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

Fingerprint

Electron energy levels
Semiconductor quantum wells
Semiconductor quantum dots
energy levels
quantum dots
quantum wells
Electron transitions
Excited states
confining
Ground state
Photoluminescence
potential energy
photoluminescence
ground state
excitation

Cite this

Ahopelto, Jouni ; Sopanen, Markku ; Lipsanen, Harri. / Tailoring of energy levels in strain-induced quantum dots. In: Japanese Journal of Applied Physics. 1999 ; Vol. 38, No. 1. pp. 1081-1084.
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Tailoring of energy levels in strain-induced quantum dots. / Ahopelto, Jouni; Sopanen, Markku; Lipsanen, Harri.

In: Japanese Journal of Applied Physics, Vol. 38, No. 1, 1999, p. 1081-1084.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Tailoring of energy levels in strain-induced quantum dots

AU - Ahopelto, Jouni

AU - Sopanen, Markku

AU - Lipsanen, Harri

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N2 - High-quality strain-induced quantum dots with properties that can be tailored have been fabricated by growing small InP islands on top of an InGaAs/GaAs near-surface quantum well. The quantum dots show small inhomogeneous broadening, and peaks from the ground and excited state transitions are well resolved in the photoluminescence spectra measured from the dots. The depth of the confining potential and the energy level separation can be varied over a relatively wide range from 35 meV to 100 meV and from 7 meV to 25 meV, respectively, by changing the top barrier thickness of the near-surface quantum well and/or the size of the stressor islands.

AB - High-quality strain-induced quantum dots with properties that can be tailored have been fabricated by growing small InP islands on top of an InGaAs/GaAs near-surface quantum well. The quantum dots show small inhomogeneous broadening, and peaks from the ground and excited state transitions are well resolved in the photoluminescence spectra measured from the dots. The depth of the confining potential and the energy level separation can be varied over a relatively wide range from 35 meV to 100 meV and from 7 meV to 25 meV, respectively, by changing the top barrier thickness of the near-surface quantum well and/or the size of the stressor islands.

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DO - 10.1143/JJAP.38.1081

M3 - Article

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EP - 1084

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

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