Tantalum carbide and nitride diffusion barriers for Cu metallization

Tomi Laurila (Corresponding Author), Kejun Zeng, Jyrki Molarius, Tommi Riekkinen, Ilkka Suni, Jorma Kivilahti

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

The reactions in the Si/TaC/Cu and Si/Ta2N/Cu metallisation systems were investigated by X-ray diffraction, Rutherford backscattering, scanning electron microscope and the transmission electron microscopy. The results were then combined with the assessed ternary Si–Ta–C, Ta–C–Cu, Si–Ta–N and Ta–N–Cu phase diagrams. It was found that both barriers ultimately failed due to diffusion of Cu through the barrier and accompanied formation of Cu3Si at temperatures higher than 725°C. However, in the TaC barriers the formation of amorphous TaOx layer with significant amounts of C took place at the TaC/Cu interface already at 600°C. Similar behaviour at ‘low’ temperatures was also noted in the Ta2N barriers.
Original languageEnglish
Pages (from-to)71-80
JournalMicroelectronic Engineering
Volume60
Issue number1-2
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

Fingerprint

Tantalum carbide
tantalum carbides
tantalum nitrides
Diffusion barriers
Metallizing
Nitrides
Rutherford backscattering spectroscopy
Phase diagrams
Electron microscopes
Transmission electron microscopy
Scanning
X ray diffraction
Temperature
backscattering
electron microscopes
phase diagrams
transmission electron microscopy
scanning
diffraction
x rays

Keywords

  • phase diagrams
  • diffusion barriers
  • copper metallisation
  • tantalum carbide
  • tantalum nitride

Cite this

Laurila, T., Zeng, K., Molarius, J., Riekkinen, T., Suni, I., & Kivilahti, J. (2002). Tantalum carbide and nitride diffusion barriers for Cu metallization. Microelectronic Engineering, 60(1-2), 71-80. https://doi.org/10.1016/S0167-9317(01)00582-2
Laurila, Tomi ; Zeng, Kejun ; Molarius, Jyrki ; Riekkinen, Tommi ; Suni, Ilkka ; Kivilahti, Jorma. / Tantalum carbide and nitride diffusion barriers for Cu metallization. In: Microelectronic Engineering. 2002 ; Vol. 60, No. 1-2. pp. 71-80.
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Laurila, T, Zeng, K, Molarius, J, Riekkinen, T, Suni, I & Kivilahti, J 2002, 'Tantalum carbide and nitride diffusion barriers for Cu metallization', Microelectronic Engineering, vol. 60, no. 1-2, pp. 71-80. https://doi.org/10.1016/S0167-9317(01)00582-2

Tantalum carbide and nitride diffusion barriers for Cu metallization. / Laurila, Tomi (Corresponding Author); Zeng, Kejun; Molarius, Jyrki; Riekkinen, Tommi; Suni, Ilkka; Kivilahti, Jorma.

In: Microelectronic Engineering, Vol. 60, No. 1-2, 2002, p. 71-80.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Laurila, Tomi

AU - Zeng, Kejun

AU - Molarius, Jyrki

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AU - Kivilahti, Jorma

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AB - The reactions in the Si/TaC/Cu and Si/Ta2N/Cu metallisation systems were investigated by X-ray diffraction, Rutherford backscattering, scanning electron microscope and the transmission electron microscopy. The results were then combined with the assessed ternary Si–Ta–C, Ta–C–Cu, Si–Ta–N and Ta–N–Cu phase diagrams. It was found that both barriers ultimately failed due to diffusion of Cu through the barrier and accompanied formation of Cu3Si at temperatures higher than 725°C. However, in the TaC barriers the formation of amorphous TaOx layer with significant amounts of C took place at the TaC/Cu interface already at 600°C. Similar behaviour at ‘low’ temperatures was also noted in the Ta2N barriers.

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