TCT and test beam results of irradiated magnetic Czochralski silicon (MCz-Si) detectors

Panja Luukka*, J. Harkonen, T. Maenpaa, B. Betchart, Czellar Sandor, R. Demina, A. Furgeri, Y. Gotra, M. Frey, F. Hartmann, S. Korjenevski, M. J. Kortelainen, Tapio Lampén, B. Ledermann, V. Lemaitre, T. Liamsuwan, O. Militaru, H. Moilanen, H. J. Simonis, L. SpiegelEija Maarit Tuominen, Jorma Tuominiemi, E. Tuovinen

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

7 Citations (Scopus)

Abstract

Pad and strip detectors processed on high resistivity n-type magnetic Czochralski silicon (MCz-Si) were irradiated to several different fluences with protons. The pad detectors were characterized with the transient current technique (TCT) and the full-size strip detectors with a reference beam telescope and a 225 GeV muon beam. The TCT measurements indicate a double junction structure and space charge sign inversion in MCz-Si detectors after 1 MeV fluence. In the beam test a signal-to-noise (S/N) ratio of 50 was measured for a non-irradiated MCz-Si sensor, and a S/N ratio of 20 for the sensors irradiated to the fluences of 1 and 1 MeV.
Original languageEnglish
Number of pages254
JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume604
Issue number1-2
DOIs
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

Fingerprint

Dive into the research topics of 'TCT and test beam results of irradiated magnetic Czochralski silicon (MCz-Si) detectors'. Together they form a unique fingerprint.

Cite this