TCT and test beam results of irradiated magnetic Czochralski silicon (MCz-Si) detectors

  • Panja Luukka*
  • , J. Harkonen
  • , T. Maenpaa
  • , B. Betchart
  • , Czellar Sandor
  • , R. Demina
  • , A. Furgeri
  • , Y. Gotra
  • , M. Frey
  • , F. Hartmann
  • , S. Korjenevski
  • , M. J. Kortelainen
  • , Tapio Lampén
  • , B. Ledermann
  • , V. Lemaitre
  • , T. Liamsuwan
  • , O. Militaru
  • , H. Moilanen
  • , H. J. Simonis
  • , L. Spiegel
  • Eija Maarit Tuominen, Jorma Tuominiemi, Esa Tuovinen
*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

7 Citations (Scopus)

Abstract

Pad and strip detectors processed on high resistivity n-type magnetic Czochralski silicon (MCz-Si) were irradiated to several different fluences with protons. The pad detectors were characterized with the transient current technique (TCT) and the full-size strip detectors with a reference beam telescope and a 225 GeV muon beam. The TCT measurements indicate a double junction structure and space charge sign inversion in MCz-Si detectors after 1 MeV fluence. In the beam test a signal-to-noise (S/N) ratio of 50 was measured for a non-irradiated MCz-Si sensor, and a S/N ratio of 20 for the sensors irradiated to the fluences of 1 and 1 MeV.
Original languageEnglish
Number of pages254
JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume604
Issue number1-2
DOIs
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

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