Temperature compensated beam resonator

Antti Jaakkola (Inventor), Panu Pekko (Inventor), Mika Prunnila (Inventor), Tuomas Pensala (Inventor)

    Research output: PatentPatent


    The invention provides a microelectromechanical resonator device comprising a support structure and a resonator manufactured on a (100) or (110) semiconductor wafer, wherein the resonator is suspended to the support structure and comprises at least one beam being doped to a doping concentration of 1.1*1020 cm-3 or more with an n-type doping agent and is being capable of resonating in a length-extensional, flexural resonance or torsional mode upon suitable actuation. In particular, the doping concentration and angle of the beam are chosen so as to simultaneously produce zero or close to zero second order TCF, and even more preferably zero or close to zero first and second order TCFs, for the resonator in said resonance mode, thus providing a temperature stable resonator.

    Patent family as of 18.11.2021
    CN107005223 A 20170801 CN201580064515 20151002      
    CN107005223 B 20210604 CN201580064515 20151002      
    DE602015053420 D1 20200618 DE201560053420T 20151002      
    EP3202036 A1 20170809 EP20150780911 20151002      
    EP3202036 B1 20200527 EP20150780911 20151002      
    JP2017536012 T2 20171130 JP20170517781T 20151002      
    JP6587681 B2 20191009 JP20170517781T 20151002      
    US10056877 BB 20180821 US20150874522 20151005      
    US2016099703 AA 20160407 US20150874522 20151005      
    WO16051022 A1 20160407 WO2015FI50657 20151002

    Link to current patent family on right 

    Original languageEnglish
    Patent numberEP3202036
    IPCH03H 9/ 02 A I
    Priority date2/10/15
    Publication statusPublished - 9 Aug 2017
    MoE publication typeH1 Granted patent


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