Temperature compensated beam resonator

Antti Jaakkola; Panu Pekko; Mika Prunnila; Tuomas Pensala

Temperature compensated beam resonator

Antti Jaakkola (Inventor), Panu Pekko (Inventor), Mika Prunnila (Inventor), Tuomas Pensala (Inventor)

Research output: Patent › Patent

Abstract

The invention provides a microelectromechanical resonator device comprising a support structure and a resonator manufactured on a (100) or (110) semiconductor wafer, wherein the resonator is suspended to the support structure and comprises at least one beam being doped to a doping concentration of 1.1*1020 cm-3 or more with an n-type doping agent and is being capable of resonating in a length-extensional, flexural resonance or torsional mode upon suitable actuation. In particular, the doping concentration and angle of the beam are chosen so as to simultaneously produce zero or close to zero second order TCF, and even more preferably zero or close to zero first and second order TCFs, for the resonator in said resonance mode, thus providing a temperature stable resonator.

Patent family as of 18.11.2021
CN107005223 A 20170801 CN201580064515 20151002
CN107005223 B 20210604 CN201580064515 20151002
DE602015053420 D1 20200618 DE201560053420T 20151002
EP3202036 A1 20170809 EP20150780911 20151002
EP3202036 B1 20200527 EP20150780911 20151002
JP2017536012 T2 20171130 JP20170517781T 20151002
JP6587681 B2 20191009 JP20170517781T 20151002
US10056877 BB 20180821 US20150874522 20151005
US2016099703 AA 20160407 US20150874522 20151005
WO16051022 A1 20160407 WO2015FI50657 20151002

Link to current patent family on right

Original language	English
Patent number	EP3202036
IPC	H03H 9/ 02 A I
Priority date	2/10/15
Publication status	Published - 9 Aug 2017
MoE publication type	H1 Granted patent

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title = "Temperature compensated beam resonator",

abstract = "The invention provides a microelectromechanical resonator device comprising a support structure and a resonator manufactured on a (100) or (110) semiconductor wafer, wherein the resonator is suspended to the support structure and comprises at least one beam being doped to a doping concentration of 1.1*1020 cm-3 or more with an n-type doping agent and is being capable of resonating in a length-extensional, flexural resonance or torsional mode upon suitable actuation. In particular, the doping concentration and angle of the beam are chosen so as to simultaneously produce zero or close to zero second order TCF, and even more preferably zero or close to zero first and second order TCFs, for the resonator in said resonance mode, thus providing a temperature stable resonator.Patent family as of 18.11.2021CN107005223 A 20170801 CN201580064515 20151002 CN107005223 B 20210604 CN201580064515 20151002 DE602015053420 D1 20200618 DE201560053420T 20151002 EP3202036 A1 20170809 EP20150780911 20151002 EP3202036 B1 20200527 EP20150780911 20151002 JP2017536012 T2 20171130 JP20170517781T 20151002 JP6587681 B2 20191009 JP20170517781T 20151002 US10056877 BB 20180821 US20150874522 20151005 US2016099703 AA 20160407 US20150874522 20151005 WO16051022 A1 20160407 WO2015FI50657 20151002Link to current patent family on right ",

author = "Antti Jaakkola and Panu Pekko and Mika Prunnila and Tuomas Pensala",

year = "2017",

month = aug,

day = "9",

language = "English",

type = "Patent",

note = "EP3202036; H03H 9/ 02 A I",

}

TY - PAT

T1 - Temperature compensated beam resonator

AU - Jaakkola, Antti

AU - Pekko, Panu

AU - Prunnila, Mika

AU - Pensala, Tuomas

PY - 2017/8/9

Y1 - 2017/8/9

N2 - The invention provides a microelectromechanical resonator device comprising a support structure and a resonator manufactured on a (100) or (110) semiconductor wafer, wherein the resonator is suspended to the support structure and comprises at least one beam being doped to a doping concentration of 1.1*1020 cm-3 or more with an n-type doping agent and is being capable of resonating in a length-extensional, flexural resonance or torsional mode upon suitable actuation. In particular, the doping concentration and angle of the beam are chosen so as to simultaneously produce zero or close to zero second order TCF, and even more preferably zero or close to zero first and second order TCFs, for the resonator in said resonance mode, thus providing a temperature stable resonator.Patent family as of 18.11.2021CN107005223 A 20170801 CN201580064515 20151002 CN107005223 B 20210604 CN201580064515 20151002 DE602015053420 D1 20200618 DE201560053420T 20151002 EP3202036 A1 20170809 EP20150780911 20151002 EP3202036 B1 20200527 EP20150780911 20151002 JP2017536012 T2 20171130 JP20170517781T 20151002 JP6587681 B2 20191009 JP20170517781T 20151002 US10056877 BB 20180821 US20150874522 20151005 US2016099703 AA 20160407 US20150874522 20151005 WO16051022 A1 20160407 WO2015FI50657 20151002Link to current patent family on right

AB - The invention provides a microelectromechanical resonator device comprising a support structure and a resonator manufactured on a (100) or (110) semiconductor wafer, wherein the resonator is suspended to the support structure and comprises at least one beam being doped to a doping concentration of 1.1*1020 cm-3 or more with an n-type doping agent and is being capable of resonating in a length-extensional, flexural resonance or torsional mode upon suitable actuation. In particular, the doping concentration and angle of the beam are chosen so as to simultaneously produce zero or close to zero second order TCF, and even more preferably zero or close to zero first and second order TCFs, for the resonator in said resonance mode, thus providing a temperature stable resonator.Patent family as of 18.11.2021CN107005223 A 20170801 CN201580064515 20151002 CN107005223 B 20210604 CN201580064515 20151002 DE602015053420 D1 20200618 DE201560053420T 20151002 EP3202036 A1 20170809 EP20150780911 20151002 EP3202036 B1 20200527 EP20150780911 20151002 JP2017536012 T2 20171130 JP20170517781T 20151002 JP6587681 B2 20191009 JP20170517781T 20151002 US10056877 BB 20180821 US20150874522 20151005 US2016099703 AA 20160407 US20150874522 20151005 WO16051022 A1 20160407 WO2015FI50657 20151002Link to current patent family on right

UR - https://worldwide.espacenet.com/patent/search/family/054325006/publication/EP3202036A1?q=EP3202036

M3 - Patent

M1 - EP3202036

ER -

Temperature compensated beam resonator

Abstract

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