Temperature compensated resonance modes of degenerately n-doped silicon MEMS resonators

Antti Jaakkola, Mika Prunnila, Tuomas Pensala

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    14 Citations (Scopus)

    Abstract

    We model the temperature coefficients of resonance modes of degenerately n-type doped silicon resonators.
    By combining results from FEM-based sensitivity analysis and modelling of elastic constants of silicon with free carrier theory we are able to identify classes of resonance modes that can be temperature compensated via n-type doping.
    These include bulk modes such as the width/length extensional modes of a beam, Lamé/square extensional modes of a plate resonator, as well as flexural and torsional resonance modes.
    Our results show that virtually all resonance modes of practical importance can reach zero TCF when the resonator is aligned to a correct crystallographic orientation and when the n-dopant concentration is suitably selected
    Original languageEnglish
    Title of host publicationProceedings IFCS 2012
    Subtitle of host publicationInternational Frequency Control Symposium
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages77-81
    ISBN (Electronic)978-1-4577-1820-5
    ISBN (Print)978-1-4577-1819-9, 978-1-4577-1821-2
    DOIs
    Publication statusPublished - 2012
    MoE publication typeNot Eligible
    EventIEEE International Frequency Control Symposium, IFCS 2012 - Baltimore, United States
    Duration: 21 May 201224 May 2012
    Conference number: 66

    Conference

    ConferenceIEEE International Frequency Control Symposium, IFCS 2012
    Abbreviated titleIFCS 2012
    CountryUnited States
    CityBaltimore
    Period21/05/1224/05/12

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    Cite this

    Jaakkola, A., Prunnila, M., & Pensala, T. (2012). Temperature compensated resonance modes of degenerately n-doped silicon MEMS resonators. In Proceedings IFCS 2012: International Frequency Control Symposium (pp. 77-81). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/FCS.2012.6243712