Temperature compensated resonance modes of degenerately n-doped silicon MEMS resonators

Antti Jaakkola, Mika Prunnila, Tuomas Pensala

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

14 Citations (Scopus)

Abstract

We model the temperature coefficients of resonance modes of degenerately n-type doped silicon resonators.
By combining results from FEM-based sensitivity analysis and modelling of elastic constants of silicon with free carrier theory we are able to identify classes of resonance modes that can be temperature compensated via n-type doping.
These include bulk modes such as the width/length extensional modes of a beam, Lamé/square extensional modes of a plate resonator, as well as flexural and torsional resonance modes.
Our results show that virtually all resonance modes of practical importance can reach zero TCF when the resonator is aligned to a correct crystallographic orientation and when the n-dopant concentration is suitably selected
Original languageEnglish
Title of host publicationProceedings IFCS 2012
Subtitle of host publicationInternational Frequency Control Symposium
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages77-81
ISBN (Electronic)978-1-4577-1820-5
ISBN (Print)978-1-4577-1819-9, 978-1-4577-1821-2
DOIs
Publication statusPublished - 2012
MoE publication typeNot Eligible
EventIEEE International Frequency Control Symposium, IFCS 2012 - Baltimore, United States
Duration: 21 May 201224 May 2012
Conference number: 66

Conference

ConferenceIEEE International Frequency Control Symposium, IFCS 2012
Abbreviated titleIFCS 2012
CountryUnited States
CityBaltimore
Period21/05/1224/05/12

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microelectromechanical systems
resonators
silicon
temperature
sensitivity analysis
elastic properties
coefficients

Cite this

Jaakkola, A., Prunnila, M., & Pensala, T. (2012). Temperature compensated resonance modes of degenerately n-doped silicon MEMS resonators. In Proceedings IFCS 2012: International Frequency Control Symposium (pp. 77-81). Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/FCS.2012.6243712
Jaakkola, Antti ; Prunnila, Mika ; Pensala, Tuomas. / Temperature compensated resonance modes of degenerately n-doped silicon MEMS resonators. Proceedings IFCS 2012: International Frequency Control Symposium . Institute of Electrical and Electronic Engineers IEEE, 2012. pp. 77-81
@inproceedings{778f16a6d7814312a9a7c8fd68ac4c9e,
title = "Temperature compensated resonance modes of degenerately n-doped silicon MEMS resonators",
abstract = "We model the temperature coefficients of resonance modes of degenerately n-type doped silicon resonators. By combining results from FEM-based sensitivity analysis and modelling of elastic constants of silicon with free carrier theory we are able to identify classes of resonance modes that can be temperature compensated via n-type doping. These include bulk modes such as the width/length extensional modes of a beam, Lam{\'e}/square extensional modes of a plate resonator, as well as flexural and torsional resonance modes. Our results show that virtually all resonance modes of practical importance can reach zero TCF when the resonator is aligned to a correct crystallographic orientation and when the n-dopant concentration is suitably selected",
author = "Antti Jaakkola and Mika Prunnila and Tuomas Pensala",
year = "2012",
doi = "10.1109/FCS.2012.6243712",
language = "English",
isbn = "978-1-4577-1819-9",
pages = "77--81",
booktitle = "Proceedings IFCS 2012",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
address = "United States",

}

Jaakkola, A, Prunnila, M & Pensala, T 2012, Temperature compensated resonance modes of degenerately n-doped silicon MEMS resonators. in Proceedings IFCS 2012: International Frequency Control Symposium . Institute of Electrical and Electronic Engineers IEEE, pp. 77-81, IEEE International Frequency Control Symposium, IFCS 2012, Baltimore, United States, 21/05/12. https://doi.org/10.1109/FCS.2012.6243712

Temperature compensated resonance modes of degenerately n-doped silicon MEMS resonators. / Jaakkola, Antti; Prunnila, Mika; Pensala, Tuomas.

Proceedings IFCS 2012: International Frequency Control Symposium . Institute of Electrical and Electronic Engineers IEEE, 2012. p. 77-81.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Temperature compensated resonance modes of degenerately n-doped silicon MEMS resonators

AU - Jaakkola, Antti

AU - Prunnila, Mika

AU - Pensala, Tuomas

PY - 2012

Y1 - 2012

N2 - We model the temperature coefficients of resonance modes of degenerately n-type doped silicon resonators. By combining results from FEM-based sensitivity analysis and modelling of elastic constants of silicon with free carrier theory we are able to identify classes of resonance modes that can be temperature compensated via n-type doping. These include bulk modes such as the width/length extensional modes of a beam, Lamé/square extensional modes of a plate resonator, as well as flexural and torsional resonance modes. Our results show that virtually all resonance modes of practical importance can reach zero TCF when the resonator is aligned to a correct crystallographic orientation and when the n-dopant concentration is suitably selected

AB - We model the temperature coefficients of resonance modes of degenerately n-type doped silicon resonators. By combining results from FEM-based sensitivity analysis and modelling of elastic constants of silicon with free carrier theory we are able to identify classes of resonance modes that can be temperature compensated via n-type doping. These include bulk modes such as the width/length extensional modes of a beam, Lamé/square extensional modes of a plate resonator, as well as flexural and torsional resonance modes. Our results show that virtually all resonance modes of practical importance can reach zero TCF when the resonator is aligned to a correct crystallographic orientation and when the n-dopant concentration is suitably selected

U2 - 10.1109/FCS.2012.6243712

DO - 10.1109/FCS.2012.6243712

M3 - Conference article in proceedings

SN - 978-1-4577-1819-9

SN - 978-1-4577-1821-2

SP - 77

EP - 81

BT - Proceedings IFCS 2012

PB - Institute of Electrical and Electronic Engineers IEEE

ER -

Jaakkola A, Prunnila M, Pensala T. Temperature compensated resonance modes of degenerately n-doped silicon MEMS resonators. In Proceedings IFCS 2012: International Frequency Control Symposium . Institute of Electrical and Electronic Engineers IEEE. 2012. p. 77-81 https://doi.org/10.1109/FCS.2012.6243712