Temperature compensated resonance modes of degenerately n-doped silicon MEMS resonators

Antti Jaakkola; Mika Prunnila; Tuomas Pensala

doi:10.1109/FCS.2012.6243712

Temperature compensated resonance modes of degenerately n-doped silicon MEMS resonators

Antti Jaakkola, Mika Prunnila, Tuomas Pensala

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

14 Citations (Scopus)

Abstract

We model the temperature coefficients of resonance modes of degenerately n-type doped silicon resonators.
By combining results from FEM-based sensitivity analysis and modelling of elastic constants of silicon with free carrier theory we are able to identify classes of resonance modes that can be temperature compensated via n-type doping.
These include bulk modes such as the width/length extensional modes of a beam, Lamé/square extensional modes of a plate resonator, as well as flexural and torsional resonance modes.
Our results show that virtually all resonance modes of practical importance can reach zero TCF when the resonator is aligned to a correct crystallographic orientation and when the n-dopant concentration is suitably selected

Original language	English
Title of host publication	Proceedings IFCS 2012
Subtitle of host publication	International Frequency Control Symposium
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	77-81
ISBN (Electronic)	978-1-4577-1820-5
ISBN (Print)	978-1-4577-1819-9, 978-1-4577-1821-2
DOIs	https://doi.org/10.1109/FCS.2012.6243712
Publication status	Published - 2012
MoE publication type	Not Eligible
Event	IEEE International Frequency Control Symposium, IFCS 2012 - Baltimore, United States Duration: 21 May 2012 → 24 May 2012 Conference number: 66

Conference

Conference	IEEE International Frequency Control Symposium, IFCS 2012
Abbreviated title	IFCS 2012
Country	United States
City	Baltimore
Period	21/05/12 → 24/05/12

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title = "Temperature compensated resonance modes of degenerately n-doped silicon MEMS resonators",

abstract = "We model the temperature coefficients of resonance modes of degenerately n-type doped silicon resonators. By combining results from FEM-based sensitivity analysis and modelling of elastic constants of silicon with free carrier theory we are able to identify classes of resonance modes that can be temperature compensated via n-type doping. These include bulk modes such as the width/length extensional modes of a beam, Lam{\'e}/square extensional modes of a plate resonator, as well as flexural and torsional resonance modes. Our results show that virtually all resonance modes of practical importance can reach zero TCF when the resonator is aligned to a correct crystallographic orientation and when the n-dopant concentration is suitably selected",

author = "Antti Jaakkola and Mika Prunnila and Tuomas Pensala",

year = "2012",

doi = "10.1109/FCS.2012.6243712",

language = "English",

isbn = "978-1-4577-1819-9",

pages = "77--81",

booktitle = "Proceedings IFCS 2012",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "IEEE International Frequency Control Symposium, IFCS 2012, IFCS 2012 ; Conference date: 21-05-2012 Through 24-05-2012",

}

Jaakkola, A, Prunnila, M & Pensala, T 2012, Temperature compensated resonance modes of degenerately n-doped silicon MEMS resonators. in Proceedings IFCS 2012: International Frequency Control Symposium . IEEE Institute of Electrical and Electronic Engineers, pp. 77-81, IEEE International Frequency Control Symposium, IFCS 2012, Baltimore, United States, 21/05/12. https://doi.org/10.1109/FCS.2012.6243712

Temperature compensated resonance modes of degenerately n-doped silicon MEMS resonators. / Jaakkola, Antti; Prunnila, Mika ; Pensala, Tuomas.

Proceedings IFCS 2012: International Frequency Control Symposium . IEEE Institute of Electrical and Electronic Engineers, 2012. p. 77-81.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Temperature compensated resonance modes of degenerately n-doped silicon MEMS resonators

AU - Jaakkola, Antti

AU - Prunnila, Mika

AU - Pensala, Tuomas

N1 - Conference code: 66

PY - 2012

Y1 - 2012

N2 - We model the temperature coefficients of resonance modes of degenerately n-type doped silicon resonators. By combining results from FEM-based sensitivity analysis and modelling of elastic constants of silicon with free carrier theory we are able to identify classes of resonance modes that can be temperature compensated via n-type doping. These include bulk modes such as the width/length extensional modes of a beam, Lamé/square extensional modes of a plate resonator, as well as flexural and torsional resonance modes. Our results show that virtually all resonance modes of practical importance can reach zero TCF when the resonator is aligned to a correct crystallographic orientation and when the n-dopant concentration is suitably selected

AB - We model the temperature coefficients of resonance modes of degenerately n-type doped silicon resonators. By combining results from FEM-based sensitivity analysis and modelling of elastic constants of silicon with free carrier theory we are able to identify classes of resonance modes that can be temperature compensated via n-type doping. These include bulk modes such as the width/length extensional modes of a beam, Lamé/square extensional modes of a plate resonator, as well as flexural and torsional resonance modes. Our results show that virtually all resonance modes of practical importance can reach zero TCF when the resonator is aligned to a correct crystallographic orientation and when the n-dopant concentration is suitably selected

U2 - 10.1109/FCS.2012.6243712

DO - 10.1109/FCS.2012.6243712

M3 - Conference article in proceedings

SN - 978-1-4577-1819-9

SN - 978-1-4577-1821-2

SP - 77

EP - 81

BT - Proceedings IFCS 2012

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - IEEE International Frequency Control Symposium, IFCS 2012

Y2 - 21 May 2012 through 24 May 2012

ER -