Abstract
By combining results from FEM-based sensitivity analysis and modelling of elastic constants of silicon with free carrier theory we are able to identify classes of resonance modes that can be temperature compensated via n-type doping.
These include bulk modes such as the width/length extensional modes of a beam, Lamé/square extensional modes of a plate resonator, as well as flexural and torsional resonance modes.
Our results show that virtually all resonance modes of practical importance can reach zero TCF when the resonator is aligned to a correct crystallographic orientation and when the n-dopant concentration is suitably selected
| Original language | English |
|---|---|
| Title of host publication | Proceedings IFCS 2012 |
| Subtitle of host publication | International Frequency Control Symposium |
| Publisher | Institute of Electrical and Electronic Engineers IEEE |
| Pages | 77-81 |
| ISBN (Electronic) | 978-1-4577-1820-5 |
| ISBN (Print) | 978-1-4577-1819-9, 978-1-4577-1821-2 |
| DOIs | |
| Publication status | Published - 2012 |
| MoE publication type | Not Eligible |
| Event | IEEE International Frequency Control Symposium, IFCS 2012 - Baltimore, United States Duration: 21 May 2012 → 24 May 2012 Conference number: 66 |
Conference
| Conference | IEEE International Frequency Control Symposium, IFCS 2012 |
|---|---|
| Abbreviated title | IFCS 2012 |
| Country | United States |
| City | Baltimore |
| Period | 21/05/12 → 24/05/12 |
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Temperature compensated resonance modes of degenerately n-doped silicon MEMS resonators. / Jaakkola, Antti; Prunnila, Mika; Pensala, Tuomas.
Proceedings IFCS 2012: International Frequency Control Symposium . Institute of Electrical and Electronic Engineers IEEE, 2012. p. 77-81.Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review
TY - GEN
T1 - Temperature compensated resonance modes of degenerately n-doped silicon MEMS resonators
AU - Jaakkola, Antti
AU - Prunnila, Mika
AU - Pensala, Tuomas
PY - 2012
Y1 - 2012
N2 - We model the temperature coefficients of resonance modes of degenerately n-type doped silicon resonators. By combining results from FEM-based sensitivity analysis and modelling of elastic constants of silicon with free carrier theory we are able to identify classes of resonance modes that can be temperature compensated via n-type doping. These include bulk modes such as the width/length extensional modes of a beam, Lamé/square extensional modes of a plate resonator, as well as flexural and torsional resonance modes. Our results show that virtually all resonance modes of practical importance can reach zero TCF when the resonator is aligned to a correct crystallographic orientation and when the n-dopant concentration is suitably selected
AB - We model the temperature coefficients of resonance modes of degenerately n-type doped silicon resonators. By combining results from FEM-based sensitivity analysis and modelling of elastic constants of silicon with free carrier theory we are able to identify classes of resonance modes that can be temperature compensated via n-type doping. These include bulk modes such as the width/length extensional modes of a beam, Lamé/square extensional modes of a plate resonator, as well as flexural and torsional resonance modes. Our results show that virtually all resonance modes of practical importance can reach zero TCF when the resonator is aligned to a correct crystallographic orientation and when the n-dopant concentration is suitably selected
U2 - 10.1109/FCS.2012.6243712
DO - 10.1109/FCS.2012.6243712
M3 - Conference article in proceedings
SN - 978-1-4577-1819-9
SN - 978-1-4577-1821-2
SP - 77
EP - 81
BT - Proceedings IFCS 2012
PB - Institute of Electrical and Electronic Engineers IEEE
ER -