Temperature compensation of silicon MEMS Resonators by Heavy Doping

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    51 Citations (Scopus)


    Passive temperature compensation of silicon MEMS resonators based on heavy n- and p-type doping is studied. Resonators are fabricated utilizing silicon with phosphorus doping level of 5·10 19 cm -3 and boron doping levels of 5·10 19 cm -3 and 2 · 10 20 cm -3 , the latter being stress compensated with germanium. The temperature behavior of the resonance frequencies of Lamé and square extensional (SE) modes is measured. Depending on the vibration mode and crystal orientation, significant temperature compensation effects are observed: as a result of heavy n-type doping the temperature coefficient of frequency (TCF) of the SE mode is reduced from -32 ppm/K to ca. -1 ppm/K, while a Lamé mode resonator exhibits an overcompensated TCF of +18 ppm/K. In p-type resonators a TCF of ca. -2 ppm/K is observed in a Lamé-mode. Keyes' [1] theory of free carrier contribution to the elastic constants of many-valley semiconductors is used to predict the temperature behavior of the n-type resonators. Good agreement is obtained between predicted and observed temperature behavior. The n-type doping can be applied to the TCF reduction of a large class of resonators and shows great potential in improving Si resonator performance.
    Original languageEnglish
    Title of host publication2011 IEEE International Ultrasonics Symposium
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Number of pages4
    ISBN (Electronic)978-1-4577-1252-4, 978-1-4577-1251-7
    ISBN (Print)978-1-4577-1253-1
    Publication statusPublished - 2011
    MoE publication typeNot Eligible
    EventIEEE International Ultrasonics Symposium, IUS 2011 - Orlando, United States
    Duration: 18 Oct 201121 Oct 2011


    ConferenceIEEE International Ultrasonics Symposium, IUS 2011
    Abbreviated titleIUS 2011
    Country/TerritoryUnited States


    Dive into the research topics of 'Temperature compensation of silicon MEMS Resonators by Heavy Doping'. Together they form a unique fingerprint.

    Cite this