Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes: International Conference on the Physics of Semiconductors

Victor-Tapio Rangel-Kuoppa; Sami Suihkonen; Markku Sopanen; Harri Lipsanen; MJ Caldas; N Studart

doi:10.1063/1.3295546

Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes: International Conference on the Physics of Semiconductors

Victor-Tapio Rangel-Kuoppa, Sami Suihkonen, Markku Sopanen, Harri Lipsanen, MJ Caldas (Editor), N Studart (Editor)

Not published at VTT

Helsinki University of Technology

Research output: Contribution to journal › Article in a proceedings journal › Scientific › peer-review

Abstract

The Current-Voltage (IV) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factor, the saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory. The ideality factor is temperature dependent, while the saturation current and the barrier height are not. The non conventional Richardson plot exhibits good linearity, corresponding to an activation energy of 2.08 eV and a Richardson constant of 18.7Am -2K-2. The Cheung's method to estimate the value of a possible series resistance RS yields a negligible resistance. From reverse-bias IV analysis, it is found that the experimental carrier density (ND) value increases with temperature. © 2009 American Institute of Physics.

Original language	English
Number of pages	2
Journal	AIP Conference Proceedings
Volume	1199
Issue number	1
DOIs	https://doi.org/10.1063/1.3295546
Publication status	Published - 2009
MoE publication type	A4 Article in a conference publication

Keywords

Carrier density
Electron affinity
InN
IV
IVT
Pt contact
Richardson constant
Schottky contact
Temperature dependence

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@article{2d4aa35d96d24c1c88164c22b7108fdd,

title = "Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes: International Conference on the Physics of Semiconductors",

abstract = "The Current-Voltage (IV) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factor, the saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory. The ideality factor is temperature dependent, while the saturation current and the barrier height are not. The non conventional Richardson plot exhibits good linearity, corresponding to an activation energy of 2.08 eV and a Richardson constant of 18.7Am -2K-2. The Cheung's method to estimate the value of a possible series resistance RS yields a negligible resistance. From reverse-bias IV analysis, it is found that the experimental carrier density (ND) value increases with temperature. {\textcopyright} 2009 American Institute of Physics.",

keywords = "Carrier density, Electron affinity, InN, IV, IVT, Pt contact, Richardson constant, Schottky contact, Temperature dependence",

author = "Victor-Tapio Rangel-Kuoppa and Sami Suihkonen and Markku Sopanen and Harri Lipsanen and MJ Caldas and N Studart",

note = "Conference code: 29",

year = "2009",

doi = "10.1063/1.3295546",

language = "English",

volume = "1199",

journal = "AIP Conference Proceedings",

issn = "0094-243X",

publisher = "American Institute of Physics",

number = "1",

}

Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes: International Conference on the Physics of Semiconductors. / Rangel-Kuoppa, Victor-Tapio; Suihkonen, Sami; Sopanen, Markku et al.
In: AIP Conference Proceedings, Vol. 1199, No. 1, 2009.

Research output: Contribution to journal › Article in a proceedings journal › Scientific › peer-review

TY - JOUR

T1 - Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes

T2 - International Conference on the Physics of Semiconductors

AU - Rangel-Kuoppa, Victor-Tapio

AU - Suihkonen, Sami

AU - Sopanen, Markku

AU - Lipsanen, Harri

A2 - Caldas, MJ

A2 - Studart, N

N1 - Conference code: 29

PY - 2009

Y1 - 2009

N2 - The Current-Voltage (IV) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factor, the saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory. The ideality factor is temperature dependent, while the saturation current and the barrier height are not. The non conventional Richardson plot exhibits good linearity, corresponding to an activation energy of 2.08 eV and a Richardson constant of 18.7Am -2K-2. The Cheung's method to estimate the value of a possible series resistance RS yields a negligible resistance. From reverse-bias IV analysis, it is found that the experimental carrier density (ND) value increases with temperature. © 2009 American Institute of Physics.

AB - The Current-Voltage (IV) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factor, the saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory. The ideality factor is temperature dependent, while the saturation current and the barrier height are not. The non conventional Richardson plot exhibits good linearity, corresponding to an activation energy of 2.08 eV and a Richardson constant of 18.7Am -2K-2. The Cheung's method to estimate the value of a possible series resistance RS yields a negligible resistance. From reverse-bias IV analysis, it is found that the experimental carrier density (ND) value increases with temperature. © 2009 American Institute of Physics.

KW - Carrier density

KW - Electron affinity

KW - InN

KW - IV

KW - IVT

KW - Pt contact

KW - Richardson constant

KW - Schottky contact

KW - Temperature dependence

U2 - 10.1063/1.3295546

DO - 10.1063/1.3295546

M3 - Article in a proceedings journal

SN - 0094-243X

VL - 1199

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

IS - 1

ER -

Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes: International Conference on the Physics of Semiconductors

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Keywords

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