Temperature dependence of GaAs metal-semiconductor field effect transistor threshold voltage

C. Liang, Hing Wong, Risto Mutikainen, R. Fourkas, Nathan Cheung, M. Sokolich, S. Kwok, S. Cheung

Research output: Contribution to journalArticleScientificpeer-review

Abstract

We have investigated the temperature dependence of threshold voltage (Vth) of n‐channel GaAs metal–semiconductor field effect transistors with different gate materials and structures. It is found that Vth increases by 0.3–0.4 V as temperature decreases from 350 to 80 K.
The Vth versus temperature relationship is approximately linear. The amount of Vth shift is independent of channel length from 0.8 to 3 μm and it does not strongly depend on the gate material used. Similar Vth increases are observed for different channel doping methods, such as ion implantation and molecular‐beam epitaxy growth.
Different GaAs substrates only show a small effect on the Vth temperature dependence. Calculations show that Fermi‐level shift and energy‐gap expansion with decreasing temperature account for only a fraction of the observed change in Vth.
Our measurements indicate that the extra Vth shift is not mainly due to deep‐level traps within the channel. Results from C–V measurements on metal/GaAs diodes suggest that build‐in voltage changes with temperature are principally responsible for the Vth shift.
Original languageEnglish
Pages (from-to)1773-1778
JournalJournal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Volume6
Issue number6
DOIs
Publication statusPublished - 1988
MoE publication typeA1 Journal article-refereed

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MESFET devices
Threshold voltage
Temperature
Field effect transistors
Epitaxial growth
Ion implantation
Diodes
Doping (additives)
Electric potential
Substrates
Metals

Cite this

Liang, C. ; Wong, Hing ; Mutikainen, Risto ; Fourkas, R. ; Cheung, Nathan ; Sokolich, M. ; Kwok, S. ; Cheung, S. / Temperature dependence of GaAs metal-semiconductor field effect transistor threshold voltage. In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena. 1988 ; Vol. 6, No. 6. pp. 1773-1778.
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abstract = "We have investigated the temperature dependence of threshold voltage (Vth) of n‐channel GaAs metal–semiconductor field effect transistors with different gate materials and structures. It is found that Vth increases by 0.3–0.4 V as temperature decreases from 350 to 80 K. The Vth versus temperature relationship is approximately linear. The amount of Vth shift is independent of channel length from 0.8 to 3 μm and it does not strongly depend on the gate material used. Similar Vth increases are observed for different channel doping methods, such as ion implantation and molecular‐beam epitaxy growth. Different GaAs substrates only show a small effect on the Vth temperature dependence. Calculations show that Fermi‐level shift and energy‐gap expansion with decreasing temperature account for only a fraction of the observed change in Vth. Our measurements indicate that the extra Vth shift is not mainly due to deep‐level traps within the channel. Results from C–V measurements on metal/GaAs diodes suggest that build‐in voltage changes with temperature are principally responsible for the Vth shift.",
author = "C. Liang and Hing Wong and Risto Mutikainen and R. Fourkas and Nathan Cheung and M. Sokolich and S. Kwok and S. Cheung",
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Temperature dependence of GaAs metal-semiconductor field effect transistor threshold voltage. / Liang, C.; Wong, Hing; Mutikainen, Risto; Fourkas, R.; Cheung, Nathan; Sokolich, M.; Kwok, S.; Cheung, S.

In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, Vol. 6, No. 6, 1988, p. 1773-1778.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Temperature dependence of GaAs metal-semiconductor field effect transistor threshold voltage

AU - Liang, C.

AU - Wong, Hing

AU - Mutikainen, Risto

AU - Fourkas, R.

AU - Cheung, Nathan

AU - Sokolich, M.

AU - Kwok, S.

AU - Cheung, S.

PY - 1988

Y1 - 1988

N2 - We have investigated the temperature dependence of threshold voltage (Vth) of n‐channel GaAs metal–semiconductor field effect transistors with different gate materials and structures. It is found that Vth increases by 0.3–0.4 V as temperature decreases from 350 to 80 K. The Vth versus temperature relationship is approximately linear. The amount of Vth shift is independent of channel length from 0.8 to 3 μm and it does not strongly depend on the gate material used. Similar Vth increases are observed for different channel doping methods, such as ion implantation and molecular‐beam epitaxy growth. Different GaAs substrates only show a small effect on the Vth temperature dependence. Calculations show that Fermi‐level shift and energy‐gap expansion with decreasing temperature account for only a fraction of the observed change in Vth. Our measurements indicate that the extra Vth shift is not mainly due to deep‐level traps within the channel. Results from C–V measurements on metal/GaAs diodes suggest that build‐in voltage changes with temperature are principally responsible for the Vth shift.

AB - We have investigated the temperature dependence of threshold voltage (Vth) of n‐channel GaAs metal–semiconductor field effect transistors with different gate materials and structures. It is found that Vth increases by 0.3–0.4 V as temperature decreases from 350 to 80 K. The Vth versus temperature relationship is approximately linear. The amount of Vth shift is independent of channel length from 0.8 to 3 μm and it does not strongly depend on the gate material used. Similar Vth increases are observed for different channel doping methods, such as ion implantation and molecular‐beam epitaxy growth. Different GaAs substrates only show a small effect on the Vth temperature dependence. Calculations show that Fermi‐level shift and energy‐gap expansion with decreasing temperature account for only a fraction of the observed change in Vth. Our measurements indicate that the extra Vth shift is not mainly due to deep‐level traps within the channel. Results from C–V measurements on metal/GaAs diodes suggest that build‐in voltage changes with temperature are principally responsible for the Vth shift.

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M3 - Article

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EP - 1778

JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

SN - 2166-2746

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