Abstract
The Vth versus temperature relationship is approximately linear. The amount of Vth shift is independent of channel length from 0.8 to 3 μm and it does not strongly depend on the gate material used. Similar Vth increases are observed for different channel doping methods, such as ion implantation and molecular‐beam epitaxy growth.
Different GaAs substrates only show a small effect on the Vth temperature dependence. Calculations show that Fermi‐level shift and energy‐gap expansion with decreasing temperature account for only a fraction of the observed change in Vth.
Our measurements indicate that the extra Vth shift is not mainly due to deep‐level traps within the channel. Results from C–V measurements on metal/GaAs diodes suggest that build‐in voltage changes with temperature are principally responsible for the Vth shift.
| Original language | English |
|---|---|
| Pages (from-to) | 1773-1778 |
| Journal | Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena |
| Volume | 6 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1988 |
| MoE publication type | A1 Journal article-refereed |
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Temperature dependence of GaAs metal-semiconductor field effect transistor threshold voltage. / Liang, C.; Wong, Hing; Mutikainen, Risto; Fourkas, R.; Cheung, Nathan; Sokolich, M.; Kwok, S.; Cheung, S.
In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, Vol. 6, No. 6, 1988, p. 1773-1778.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Temperature dependence of GaAs metal-semiconductor field effect transistor threshold voltage
AU - Liang, C.
AU - Wong, Hing
AU - Mutikainen, Risto
AU - Fourkas, R.
AU - Cheung, Nathan
AU - Sokolich, M.
AU - Kwok, S.
AU - Cheung, S.
PY - 1988
Y1 - 1988
N2 - We have investigated the temperature dependence of threshold voltage (Vth) of n‐channel GaAs metal–semiconductor field effect transistors with different gate materials and structures. It is found that Vth increases by 0.3–0.4 V as temperature decreases from 350 to 80 K. The Vth versus temperature relationship is approximately linear. The amount of Vth shift is independent of channel length from 0.8 to 3 μm and it does not strongly depend on the gate material used. Similar Vth increases are observed for different channel doping methods, such as ion implantation and molecular‐beam epitaxy growth. Different GaAs substrates only show a small effect on the Vth temperature dependence. Calculations show that Fermi‐level shift and energy‐gap expansion with decreasing temperature account for only a fraction of the observed change in Vth. Our measurements indicate that the extra Vth shift is not mainly due to deep‐level traps within the channel. Results from C–V measurements on metal/GaAs diodes suggest that build‐in voltage changes with temperature are principally responsible for the Vth shift.
AB - We have investigated the temperature dependence of threshold voltage (Vth) of n‐channel GaAs metal–semiconductor field effect transistors with different gate materials and structures. It is found that Vth increases by 0.3–0.4 V as temperature decreases from 350 to 80 K. The Vth versus temperature relationship is approximately linear. The amount of Vth shift is independent of channel length from 0.8 to 3 μm and it does not strongly depend on the gate material used. Similar Vth increases are observed for different channel doping methods, such as ion implantation and molecular‐beam epitaxy growth. Different GaAs substrates only show a small effect on the Vth temperature dependence. Calculations show that Fermi‐level shift and energy‐gap expansion with decreasing temperature account for only a fraction of the observed change in Vth. Our measurements indicate that the extra Vth shift is not mainly due to deep‐level traps within the channel. Results from C–V measurements on metal/GaAs diodes suggest that build‐in voltage changes with temperature are principally responsible for the Vth shift.
U2 - 10.1116/1.584155
DO - 10.1116/1.584155
M3 - Article
VL - 6
SP - 1773
EP - 1778
JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
SN - 2166-2746
IS - 6
ER -