Temperature dependence of Pd thin-film cryoresistors

Alexandre Satrapinski, Ossi M. Hahtela, Alexander M. Savin, Sergey Novikov, Natalia Lebedeva

    Research output: Contribution to journalArticleScientificpeer-review

    3 Citations (Scopus)


    Cryoresistors based on Pd thin films were designed and investigated in the temperature range 50 mK-300 K. The resistors in the range 100 kΩ-1.3 MΩ were fabricated by thermal evaporation technique. Resistivity of Pd film at 293 K varies in (21-53)·10 8 Ωm range for 15-40 nm films. Temperature co efficient of resistance at low temperatures depends on the thickness of the film. The lowest temperature coefficient in the range 3 K-4 K of about few parts in 10 6 /K was obtained for 20-nm-thick film. Current coefficient measured on 20-nm-thin film 1.002-MΩ resistor does not exceed 2·10 5/μA in 0.7 K-1 K temperature range.
    Original languageEnglish
    Pages (from-to)2469-2474
    JournalIEEE Transactions on Instrumentation and Measurement
    Issue number7
    Publication statusPublished - 2011
    MoE publication typeA1 Journal article-refereed


    • cryogenics
    • low temperature
    • palladium
    • resistance measurement
    • thin-film resistors


    Dive into the research topics of 'Temperature dependence of Pd thin-film cryoresistors'. Together they form a unique fingerprint.

    Cite this