Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 2469-2474 |
| Journal | IEEE Transactions on Instrumentation and Measurement |
| Volume | 60 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2011 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- cryogenics
- low temperature
- palladium
- resistance measurement
- thin-film resistors
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Temperature dependence of Pd thin-film cryoresistors. / Satrapinski, Alexandre; Hahtela, Ossi M.; Savin, Alexander M.; Novikov, Sergey; Lebedeva, Natalia.
In: IEEE Transactions on Instrumentation and Measurement, Vol. 60, No. 7, 2011, p. 2469-2474.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Temperature dependence of Pd thin-film cryoresistors
AU - Satrapinski, Alexandre
AU - Hahtela, Ossi M.
AU - Savin, Alexander M.
AU - Novikov, Sergey
AU - Lebedeva, Natalia
PY - 2011
Y1 - 2011
N2 - Cryoresistors based on Pd thin films were designed and investigated in the temperature range 50 mK-300 K. The resistors in the range 100 kΩ-1.3 MΩ were fabricated by thermal evaporation technique. Resistivity of Pd film at 293 K varies in (21-53)·10 8 Ωm range for 15-40 nm films. Temperature co efficient of resistance at low temperatures depends on the thickness of the film. The lowest temperature coefficient in the range 3 K-4 K of about few parts in 10 6 /K was obtained for 20-nm-thick film. Current coefficient measured on 20-nm-thin film 1.002-MΩ resistor does not exceed 2·10 5/μA in 0.7 K-1 K temperature range.
AB - Cryoresistors based on Pd thin films were designed and investigated in the temperature range 50 mK-300 K. The resistors in the range 100 kΩ-1.3 MΩ were fabricated by thermal evaporation technique. Resistivity of Pd film at 293 K varies in (21-53)·10 8 Ωm range for 15-40 nm films. Temperature co efficient of resistance at low temperatures depends on the thickness of the film. The lowest temperature coefficient in the range 3 K-4 K of about few parts in 10 6 /K was obtained for 20-nm-thick film. Current coefficient measured on 20-nm-thin film 1.002-MΩ resistor does not exceed 2·10 5/μA in 0.7 K-1 K temperature range.
KW - cryogenics
KW - low temperature
KW - palladium
KW - resistance measurement
KW - thin-film resistors
U2 - 10.1109/TIM.2011.2139290
DO - 10.1109/TIM.2011.2139290
M3 - Article
VL - 60
SP - 2469
EP - 2474
JO - IEEE Transactions on Instrumentation and Measurement
JF - IEEE Transactions on Instrumentation and Measurement
SN - 0018-9456
IS - 7
ER -