Temperature dependence of Pd thin-film cryoresistors

Alexandre Satrapinski, Ossi M. Hahtela, Alexander M. Savin, Sergey Novikov, Natalia Lebedeva

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    2 Citations (Scopus)

    Abstract

    Cryoresistors based on Pd thin films were designed and investigated in the temperature range 50 mK-300 K. The resistors in the range 100 kΩ-1.3 MΩ were fabricated by thermal evaporation technique. Resistivity of Pd film at 293 K varies in (21-53)·10 8 Ωm range for 15-40 nm films. Temperature co efficient of resistance at low temperatures depends on the thickness of the film. The lowest temperature coefficient in the range 3 K-4 K of about few parts in 10 6 /K was obtained for 20-nm-thick film. Current coefficient measured on 20-nm-thin film 1.002-MΩ resistor does not exceed 2·10 5/μA in 0.7 K-1 K temperature range.
    Original languageEnglish
    Pages (from-to)2469-2474
    JournalIEEE Transactions on Instrumentation and Measurement
    Volume60
    Issue number7
    DOIs
    Publication statusPublished - 2011
    MoE publication typeA1 Journal article-refereed

    Keywords

    • cryogenics
    • low temperature
    • palladium
    • resistance measurement
    • thin-film resistors

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  • Cite this

    Satrapinski, A., Hahtela, O. M., Savin, A. M., Novikov, S., & Lebedeva, N. (2011). Temperature dependence of Pd thin-film cryoresistors. IEEE Transactions on Instrumentation and Measurement, 60(7), 2469-2474. https://doi.org/10.1109/TIM.2011.2139290