Abstract
Cryoresistors based on Pd thin films were designed and investigated in the temperature range 50 mK-300 K. The resistors in the range 100 kΩ-1.3 MΩ were fabricated by thermal evaporation technique. Resistivity of Pd film at 293 K varies in (21-53)·10 8 Ωm range for 15-40 nm films. Temperature co efficient of resistance at low temperatures depends on the thickness of the film. The lowest temperature coefficient in the range 3 K-4 K of about few parts in 10 6 /K was obtained for 20-nm-thick film. Current coefficient measured on 20-nm-thin film 1.002-MΩ resistor does not exceed 2·10 5/μA in 0.7 K-1 K temperature range.
| Original language | English |
|---|---|
| Pages (from-to) | 2469-2474 |
| Journal | IEEE Transactions on Instrumentation and Measurement |
| Volume | 60 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2011 |
| MoE publication type | A1 Journal article-refereed |
Keywords
- cryogenics
- low temperature
- palladium
- resistance measurement
- thin-film resistors
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Satrapinski, A., Hahtela, O. M., Savin, A. M., Novikov, S., & Lebedeva, N. (2011). Temperature dependence of Pd thin-film cryoresistors. IEEE Transactions on Instrumentation and Measurement, 60(7), 2469-2474. https://doi.org/10.1109/TIM.2011.2139290