Temperature dependence of Pd thin-film cryoresistors

Alexandre Satrapinski, Ossi M. Hahtela, Alexander M. Savin, Sergey Novikov, Natalia Lebedeva

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)

    Abstract

    Cryoresistors based on Pd thin films were designed and investigated in the temperature range 50 mK-300 K. The resistors in the range 100 kΩ-1.3 MΩ were fabricated by thermal evaporation technique. Resistivity of Pd film at 293 K varies in (21-53)·10 8 Ωm range for 15-40 nm films. Temperature co efficient of resistance at low temperatures depends on the thickness of the film. The lowest temperature coefficient in the range 3 K-4 K of about few parts in 10 6 /K was obtained for 20-nm-thick film. Current coefficient measured on 20-nm-thin film 1.002-MΩ resistor does not exceed 2·10 5/μA in 0.7 K-1 K temperature range.
    Original languageEnglish
    Pages (from-to)2469-2474
    JournalIEEE Transactions on Instrumentation and Measurement
    Volume60
    Issue number7
    DOIs
    Publication statusPublished - 2011
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    resistors
    Thin films
    temperature dependence
    thin films
    Resistors
    coefficients
    Temperature
    thick films
    temperature
    evaporation
    Thermal evaporation
    electrical resistivity
    Thick films

    Keywords

    • cryogenics
    • low temperature
    • palladium
    • resistance measurement
    • thin-film resistors

    Cite this

    Satrapinski, A., Hahtela, O. M., Savin, A. M., Novikov, S., & Lebedeva, N. (2011). Temperature dependence of Pd thin-film cryoresistors. IEEE Transactions on Instrumentation and Measurement, 60(7), 2469-2474. https://doi.org/10.1109/TIM.2011.2139290
    Satrapinski, Alexandre ; Hahtela, Ossi M. ; Savin, Alexander M. ; Novikov, Sergey ; Lebedeva, Natalia. / Temperature dependence of Pd thin-film cryoresistors. In: IEEE Transactions on Instrumentation and Measurement. 2011 ; Vol. 60, No. 7. pp. 2469-2474.
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    title = "Temperature dependence of Pd thin-film cryoresistors",
    abstract = "Cryoresistors based on Pd thin films were designed and investigated in the temperature range 50 mK-300 K. The resistors in the range 100 kΩ-1.3 MΩ were fabricated by thermal evaporation technique. Resistivity of Pd film at 293 K varies in (21-53)·10 8 Ωm range for 15-40 nm films. Temperature co efficient of resistance at low temperatures depends on the thickness of the film. The lowest temperature coefficient in the range 3 K-4 K of about few parts in 10 6 /K was obtained for 20-nm-thick film. Current coefficient measured on 20-nm-thin film 1.002-MΩ resistor does not exceed 2·10 5/μA in 0.7 K-1 K temperature range.",
    keywords = "cryogenics, low temperature, palladium, resistance measurement, thin-film resistors",
    author = "Alexandre Satrapinski and Hahtela, {Ossi M.} and Savin, {Alexander M.} and Sergey Novikov and Natalia Lebedeva",
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    language = "English",
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    Satrapinski, A, Hahtela, OM, Savin, AM, Novikov, S & Lebedeva, N 2011, 'Temperature dependence of Pd thin-film cryoresistors', IEEE Transactions on Instrumentation and Measurement, vol. 60, no. 7, pp. 2469-2474. https://doi.org/10.1109/TIM.2011.2139290

    Temperature dependence of Pd thin-film cryoresistors. / Satrapinski, Alexandre; Hahtela, Ossi M.; Savin, Alexander M.; Novikov, Sergey; Lebedeva, Natalia.

    In: IEEE Transactions on Instrumentation and Measurement, Vol. 60, No. 7, 2011, p. 2469-2474.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Temperature dependence of Pd thin-film cryoresistors

    AU - Satrapinski, Alexandre

    AU - Hahtela, Ossi M.

    AU - Savin, Alexander M.

    AU - Novikov, Sergey

    AU - Lebedeva, Natalia

    PY - 2011

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    N2 - Cryoresistors based on Pd thin films were designed and investigated in the temperature range 50 mK-300 K. The resistors in the range 100 kΩ-1.3 MΩ were fabricated by thermal evaporation technique. Resistivity of Pd film at 293 K varies in (21-53)·10 8 Ωm range for 15-40 nm films. Temperature co efficient of resistance at low temperatures depends on the thickness of the film. The lowest temperature coefficient in the range 3 K-4 K of about few parts in 10 6 /K was obtained for 20-nm-thick film. Current coefficient measured on 20-nm-thin film 1.002-MΩ resistor does not exceed 2·10 5/μA in 0.7 K-1 K temperature range.

    AB - Cryoresistors based on Pd thin films were designed and investigated in the temperature range 50 mK-300 K. The resistors in the range 100 kΩ-1.3 MΩ were fabricated by thermal evaporation technique. Resistivity of Pd film at 293 K varies in (21-53)·10 8 Ωm range for 15-40 nm films. Temperature co efficient of resistance at low temperatures depends on the thickness of the film. The lowest temperature coefficient in the range 3 K-4 K of about few parts in 10 6 /K was obtained for 20-nm-thick film. Current coefficient measured on 20-nm-thin film 1.002-MΩ resistor does not exceed 2·10 5/μA in 0.7 K-1 K temperature range.

    KW - cryogenics

    KW - low temperature

    KW - palladium

    KW - resistance measurement

    KW - thin-film resistors

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    DO - 10.1109/TIM.2011.2139290

    M3 - Article

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    SP - 2469

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    JO - IEEE Transactions on Instrumentation and Measurement

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    ER -