Temperature dependence of Pd thin-film cryoresistors

Alexandre Satrapinski, Ossi M. Hahtela, Alexander M. Savin, Sergey Novikov, Natalia Lebedeva

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

Cryoresistors based on Pd thin films were designed and investigated in the temperature range 50 mK-300 K. The resistors in the range 100 kΩ-1.3 MΩ were fabricated by thermal evaporation technique. Resistivity of Pd film at 293 K varies in (21-53)·10 8 Ωm range for 15-40 nm films. Temperature co efficient of resistance at low temperatures depends on the thickness of the film. The lowest temperature coefficient in the range 3 K-4 K of about few parts in 10 6 /K was obtained for 20-nm-thick film. Current coefficient measured on 20-nm-thin film 1.002-MΩ resistor does not exceed 2·10 5/μA in 0.7 K-1 K temperature range.
Original languageEnglish
Pages (from-to)2469-2474
JournalIEEE Transactions on Instrumentation and Measurement
Volume60
Issue number7
DOIs
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

Fingerprint

resistors
Thin films
temperature dependence
thin films
Resistors
coefficients
Temperature
thick films
temperature
evaporation
Thermal evaporation
electrical resistivity
Thick films

Keywords

  • cryogenics
  • low temperature
  • palladium
  • resistance measurement
  • thin-film resistors

Cite this

Satrapinski, Alexandre ; Hahtela, Ossi M. ; Savin, Alexander M. ; Novikov, Sergey ; Lebedeva, Natalia. / Temperature dependence of Pd thin-film cryoresistors. In: IEEE Transactions on Instrumentation and Measurement. 2011 ; Vol. 60, No. 7. pp. 2469-2474.
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Temperature dependence of Pd thin-film cryoresistors. / Satrapinski, Alexandre; Hahtela, Ossi M.; Savin, Alexander M.; Novikov, Sergey; Lebedeva, Natalia.

In: IEEE Transactions on Instrumentation and Measurement, Vol. 60, No. 7, 2011, p. 2469-2474.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Temperature dependence of Pd thin-film cryoresistors

AU - Satrapinski, Alexandre

AU - Hahtela, Ossi M.

AU - Savin, Alexander M.

AU - Novikov, Sergey

AU - Lebedeva, Natalia

PY - 2011

Y1 - 2011

N2 - Cryoresistors based on Pd thin films were designed and investigated in the temperature range 50 mK-300 K. The resistors in the range 100 kΩ-1.3 MΩ were fabricated by thermal evaporation technique. Resistivity of Pd film at 293 K varies in (21-53)·10 8 Ωm range for 15-40 nm films. Temperature co efficient of resistance at low temperatures depends on the thickness of the film. The lowest temperature coefficient in the range 3 K-4 K of about few parts in 10 6 /K was obtained for 20-nm-thick film. Current coefficient measured on 20-nm-thin film 1.002-MΩ resistor does not exceed 2·10 5/μA in 0.7 K-1 K temperature range.

AB - Cryoresistors based on Pd thin films were designed and investigated in the temperature range 50 mK-300 K. The resistors in the range 100 kΩ-1.3 MΩ were fabricated by thermal evaporation technique. Resistivity of Pd film at 293 K varies in (21-53)·10 8 Ωm range for 15-40 nm films. Temperature co efficient of resistance at low temperatures depends on the thickness of the film. The lowest temperature coefficient in the range 3 K-4 K of about few parts in 10 6 /K was obtained for 20-nm-thick film. Current coefficient measured on 20-nm-thin film 1.002-MΩ resistor does not exceed 2·10 5/μA in 0.7 K-1 K temperature range.

KW - cryogenics

KW - low temperature

KW - palladium

KW - resistance measurement

KW - thin-film resistors

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