Temperature dependency of the composition of GaInAsP grown by GSMBE

K. Tappura, T. Hakkarainen, K. Rakennus, H. Asonen

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

Abstract

We have grown GaInAsP layers on InP substrates by gas-source molecular beam epitaxy and observed an abrupt change in the alloy composition as a function of growth temperature in the GaInAsP alloys for the wavelengths 1.05<λ⪕1.3 μm. In this study we have concentrated on the alloys in the region of wavelength 1.1 μm. We have studied the influence of growth parameters such as growth rate and AsH3 and PH3 pressures on As concentration and on the magnitude of the abrupt change in more detail.
Original languageEnglish
Pages (from-to)145-149
JournalJournal of Crystal Growth
Volume120
Issue number1-4
DOIs
Publication statusPublished - 1992
MoE publication typeA1 Journal article-refereed

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Chemical analysis
Gas source molecular beam epitaxy
Wavelength
Growth temperature
wavelengths
Temperature
temperature
molecular beam epitaxy
Substrates
gases
arsine

Cite this

Tappura, K. ; Hakkarainen, T. ; Rakennus, K. ; Asonen, H. / Temperature dependency of the composition of GaInAsP grown by GSMBE. In: Journal of Crystal Growth. 1992 ; Vol. 120, No. 1-4. pp. 145-149.
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Temperature dependency of the composition of GaInAsP grown by GSMBE. / Tappura, K.; Hakkarainen, T.; Rakennus, K.; Asonen, H.

In: Journal of Crystal Growth, Vol. 120, No. 1-4, 1992, p. 145-149.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Temperature dependency of the composition of GaInAsP grown by GSMBE

AU - Tappura, K.

AU - Hakkarainen, T.

AU - Rakennus, K.

AU - Asonen, H.

PY - 1992

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N2 - We have grown GaInAsP layers on InP substrates by gas-source molecular beam epitaxy and observed an abrupt change in the alloy composition as a function of growth temperature in the GaInAsP alloys for the wavelengths 1.05<λ⪕1.3 μm. In this study we have concentrated on the alloys in the region of wavelength 1.1 μm. We have studied the influence of growth parameters such as growth rate and AsH3 and PH3 pressures on As concentration and on the magnitude of the abrupt change in more detail.

AB - We have grown GaInAsP layers on InP substrates by gas-source molecular beam epitaxy and observed an abrupt change in the alloy composition as a function of growth temperature in the GaInAsP alloys for the wavelengths 1.05<λ⪕1.3 μm. In this study we have concentrated on the alloys in the region of wavelength 1.1 μm. We have studied the influence of growth parameters such as growth rate and AsH3 and PH3 pressures on As concentration and on the magnitude of the abrupt change in more detail.

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