Temperature dependency of the composition of GaInAsP grown by GSMBE

K. Tappura; T. Hakkarainen; K. Rakennus; H. Asonen

doi:10.1016/0022-0248(92)90379-W

Temperature dependency of the composition of GaInAsP grown by GSMBE

K. Tappura, T. Hakkarainen, K. Rakennus, H. Asonen

Not published at VTT

Tampere University of Technology (TUT)

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Abstract

We have grown GaInAsP layers on InP substrates by gas-source molecular beam epitaxy and observed an abrupt change in the alloy composition as a function of growth temperature in the GaInAsP alloys for the wavelengths 1.05<λ⪕1.3 μm. In this study we have concentrated on the alloys in the region of wavelength 1.1 μm. We have studied the influence of growth parameters such as growth rate and AsH3 and PH3 pressures on As concentration and on the magnitude of the abrupt change in more detail.

Original language	English
Pages (from-to)	145-149
Journal	Journal of Crystal Growth
Volume	120
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(92)90379-W
Publication status	Published - 1992
MoE publication type	A1 Journal article-refereed

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10.1016/0022-0248(92)90379-W

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abstract = "We have grown GaInAsP layers on InP substrates by gas-source molecular beam epitaxy and observed an abrupt change in the alloy composition as a function of growth temperature in the GaInAsP alloys for the wavelengths 1.05<λ⪕1.3 μm. In this study we have concentrated on the alloys in the region of wavelength 1.1 μm. We have studied the influence of growth parameters such as growth rate and AsH3 and PH3 pressures on As concentration and on the magnitude of the abrupt change in more detail.",

author = "K. Tappura and T. Hakkarainen and K. Rakennus and H. Asonen",

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T1 - Temperature dependency of the composition of GaInAsP grown by GSMBE

AU - Tappura, K.

AU - Hakkarainen, T.

AU - Rakennus, K.

AU - Asonen, H.

PY - 1992

Y1 - 1992

N2 - We have grown GaInAsP layers on InP substrates by gas-source molecular beam epitaxy and observed an abrupt change in the alloy composition as a function of growth temperature in the GaInAsP alloys for the wavelengths 1.05<λ⪕1.3 μm. In this study we have concentrated on the alloys in the region of wavelength 1.1 μm. We have studied the influence of growth parameters such as growth rate and AsH3 and PH3 pressures on As concentration and on the magnitude of the abrupt change in more detail.

AB - We have grown GaInAsP layers on InP substrates by gas-source molecular beam epitaxy and observed an abrupt change in the alloy composition as a function of growth temperature in the GaInAsP alloys for the wavelengths 1.05<λ⪕1.3 μm. In this study we have concentrated on the alloys in the region of wavelength 1.1 μm. We have studied the influence of growth parameters such as growth rate and AsH3 and PH3 pressures on As concentration and on the magnitude of the abrupt change in more detail.

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U2 - 10.1016/0022-0248(92)90379-W

DO - 10.1016/0022-0248(92)90379-W

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SP - 145

EP - 149

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Temperature dependency of the composition of GaInAsP grown by GSMBE

Abstract

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