We have grown GaInAsP layers on InP substrates by gas-source molecular beam epitaxy and observed an abrupt change in the alloy composition as a function of growth temperature in the GaInAsP alloys for the wavelengths 1.05<λ⪕1.3 μm. In this study we have concentrated on the alloys in the region of wavelength 1.1 μm. We have studied the influence of growth parameters such as growth rate and AsH3 and PH3 pressures on As concentration and on the magnitude of the abrupt change in more detail.
Tappura, K., Hakkarainen, T., Rakennus, K., & Asonen, H. (1992). Temperature dependency of the composition of GaInAsP grown by GSMBE. Journal of Crystal Growth, 120(1-4), 145-149. https://doi.org/10.1016/0022-0248(92)90379-W