Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 145-149 |
| Journal | Journal of Crystal Growth |
| Volume | 120 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 1992 |
| MoE publication type | A1 Journal article-refereed |
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Temperature dependency of the composition of GaInAsP grown by GSMBE. / Tappura, K.; Hakkarainen, T.; Rakennus, K.; Asonen, H.
In: Journal of Crystal Growth, Vol. 120, No. 1-4, 1992, p. 145-149.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Temperature dependency of the composition of GaInAsP grown by GSMBE
AU - Tappura, K.
AU - Hakkarainen, T.
AU - Rakennus, K.
AU - Asonen, H.
PY - 1992
Y1 - 1992
N2 - We have grown GaInAsP layers on InP substrates by gas-source molecular beam epitaxy and observed an abrupt change in the alloy composition as a function of growth temperature in the GaInAsP alloys for the wavelengths 1.05<λ⪕1.3 μm. In this study we have concentrated on the alloys in the region of wavelength 1.1 μm. We have studied the influence of growth parameters such as growth rate and AsH3 and PH3 pressures on As concentration and on the magnitude of the abrupt change in more detail.
AB - We have grown GaInAsP layers on InP substrates by gas-source molecular beam epitaxy and observed an abrupt change in the alloy composition as a function of growth temperature in the GaInAsP alloys for the wavelengths 1.05<λ⪕1.3 μm. In this study we have concentrated on the alloys in the region of wavelength 1.1 μm. We have studied the influence of growth parameters such as growth rate and AsH3 and PH3 pressures on As concentration and on the magnitude of the abrupt change in more detail.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0027108796&partnerID=MN8TOARS
U2 - 10.1016/0022-0248(92)90379-W
DO - 10.1016/0022-0248(92)90379-W
M3 - Article
VL - 120
SP - 145
EP - 149
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -