Temperature-tunable silicon-wafer etalon for frequency chirp measurements

Tapio Niemi; Simo Tammela; Timo Kajava; Matti Kaivola; Hanne Ludvigsen

doi:10.1002/(SICI)1098-2760(19990205)20:3<190::AID-MOP13>3.0.CO;2-N

Temperature-tunable silicon-wafer etalon for frequency chirp measurements

Tapio Niemi, Simo Tammela, Timo Kajava, Matti Kaivola, Hanne Ludvigsen

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Abstract

A new device concept for measuring the time‐resolved frequency chirp in modulated laser diodes is presented. It makes use of a solid silicon‐wafer etalon as an optical frequency discriminator. The transmission properties of the etalon are tuned by controlling the refractive index of silicon by tuning the temperature of the etalon. The device allows automated measurements of frequency chirps up to ±25 GHz in optical telecommunication links with a time resolution of about 20 ps.

Original language	English
Pages (from-to)	190-192
Journal	Microwave and Optical Technology Letters
Volume	20
Issue number	3
DOIs	https://doi.org/10.1002/(SICI)1098-2760(19990205)20:3<190::AID-MOP13>3.0.CO;2-N
Publication status	Published - 1999
MoE publication type	A1 Journal article-refereed

Fingerprint

Keywords

frequency chirp
Fabry-Perot etalon
modulated laser diodes

Cite this

Niemi, T., Tammela, S., Kajava, T., Kaivola, M., & Ludvigsen, H. (1999). Temperature-tunable silicon-wafer etalon for frequency chirp measurements. Microwave and Optical Technology Letters, 20(3), 190-192. https://doi.org/10.1002/(SICI)1098-2760(19990205)20:3<190::AID-MOP13>3.0.CO;2-N

@article{cf5fd5825ced46e19048ecbde71821db,

title = "Temperature-tunable silicon-wafer etalon for frequency chirp measurements",

abstract = "A new device concept for measuring the time‐resolved frequency chirp in modulated laser diodes is presented. It makes use of a solid silicon‐wafer etalon as an optical frequency discriminator. The transmission properties of the etalon are tuned by controlling the refractive index of silicon by tuning the temperature of the etalon. The device allows automated measurements of frequency chirps up to ±25 GHz in optical telecommunication links with a time resolution of about 20 ps.",

keywords = "frequency chirp, Fabry-Perot etalon, modulated laser diodes",

author = "Tapio Niemi and Simo Tammela and Timo Kajava and Matti Kaivola and Hanne Ludvigsen",

note = "Project code: E8SU00499",

year = "1999",

doi = "10.1002/(SICI)1098-2760(19990205)20:3<190::AID-MOP13>3.0.CO;2-N",

language = "English",

volume = "20",

pages = "190--192",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "Wiley",

number = "3",

}

TY - JOUR

T1 - Temperature-tunable silicon-wafer etalon for frequency chirp measurements

AU - Niemi, Tapio

AU - Tammela, Simo

AU - Kajava, Timo

AU - Kaivola, Matti

AU - Ludvigsen, Hanne

N1 - Project code: E8SU00499

PY - 1999

Y1 - 1999

N2 - A new device concept for measuring the time‐resolved frequency chirp in modulated laser diodes is presented. It makes use of a solid silicon‐wafer etalon as an optical frequency discriminator. The transmission properties of the etalon are tuned by controlling the refractive index of silicon by tuning the temperature of the etalon. The device allows automated measurements of frequency chirps up to ±25 GHz in optical telecommunication links with a time resolution of about 20 ps.

AB - A new device concept for measuring the time‐resolved frequency chirp in modulated laser diodes is presented. It makes use of a solid silicon‐wafer etalon as an optical frequency discriminator. The transmission properties of the etalon are tuned by controlling the refractive index of silicon by tuning the temperature of the etalon. The device allows automated measurements of frequency chirps up to ±25 GHz in optical telecommunication links with a time resolution of about 20 ps.

KW - frequency chirp

KW - Fabry-Perot etalon

KW - modulated laser diodes

U2 - 10.1002/(SICI)1098-2760(19990205)20:3<190::AID-MOP13>3.0.CO;2-N

DO - 10.1002/(SICI)1098-2760(19990205)20:3<190::AID-MOP13>3.0.CO;2-N

M3 - Article

VL - 20

SP - 190

EP - 192

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

SN - 0895-2477

IS - 3

ER -

Access to Document

10.1002/(SICI)1098-2760(19990205)20:3<190::AID-MOP13>3.0.CO;2-N