Temperature-tunable silicon-wafer etalon for frequency chirp measurements

Tapio Niemi, Simo Tammela, Timo Kajava, Matti Kaivola, Hanne Ludvigsen

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

A new device concept for measuring the time‐resolved frequency chirp in modulated laser diodes is presented. It makes use of a solid silicon‐wafer etalon as an optical frequency discriminator. The transmission properties of the etalon are tuned by controlling the refractive index of silicon by tuning the temperature of the etalon. The device allows automated measurements of frequency chirps up to ±25 GHz in optical telecommunication links with a time resolution of about 20 ps.
Original languageEnglish
Pages (from-to)190-192
Number of pages3
JournalMicrowave and Optical Technology Letters
Volume20
Issue number3
DOIs
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

Fingerprint

Discriminators
Optical links
Silicon
chirp
Silicon wafers
Semiconductor lasers
Refractive index
Tuning
frequency discriminators
wafers
silicon
telecommunication
semiconductor lasers
tuning
refractivity
Temperature
temperature

Keywords

  • frequency chirp
  • Fabry-Perot etalon
  • modulated laser diodes

Cite this

Niemi, Tapio ; Tammela, Simo ; Kajava, Timo ; Kaivola, Matti ; Ludvigsen, Hanne. / Temperature-tunable silicon-wafer etalon for frequency chirp measurements. In: Microwave and Optical Technology Letters. 1999 ; Vol. 20, No. 3. pp. 190-192.
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abstract = "A new device concept for measuring the time‐resolved frequency chirp in modulated laser diodes is presented. It makes use of a solid silicon‐wafer etalon as an optical frequency discriminator. The transmission properties of the etalon are tuned by controlling the refractive index of silicon by tuning the temperature of the etalon. The device allows automated measurements of frequency chirps up to ±25 GHz in optical telecommunication links with a time resolution of about 20 ps.",
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Temperature-tunable silicon-wafer etalon for frequency chirp measurements. / Niemi, Tapio; Tammela, Simo; Kajava, Timo; Kaivola, Matti; Ludvigsen, Hanne.

In: Microwave and Optical Technology Letters, Vol. 20, No. 3, 1999, p. 190-192.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Temperature-tunable silicon-wafer etalon for frequency chirp measurements

AU - Niemi, Tapio

AU - Tammela, Simo

AU - Kajava, Timo

AU - Kaivola, Matti

AU - Ludvigsen, Hanne

N1 - Project code: E8SU00499

PY - 1999

Y1 - 1999

N2 - A new device concept for measuring the time‐resolved frequency chirp in modulated laser diodes is presented. It makes use of a solid silicon‐wafer etalon as an optical frequency discriminator. The transmission properties of the etalon are tuned by controlling the refractive index of silicon by tuning the temperature of the etalon. The device allows automated measurements of frequency chirps up to ±25 GHz in optical telecommunication links with a time resolution of about 20 ps.

AB - A new device concept for measuring the time‐resolved frequency chirp in modulated laser diodes is presented. It makes use of a solid silicon‐wafer etalon as an optical frequency discriminator. The transmission properties of the etalon are tuned by controlling the refractive index of silicon by tuning the temperature of the etalon. The device allows automated measurements of frequency chirps up to ±25 GHz in optical telecommunication links with a time resolution of about 20 ps.

KW - frequency chirp

KW - Fabry-Perot etalon

KW - modulated laser diodes

U2 - 10.1002/(SICI)1098-2760(19990205)20:3<190::AID-MOP13>3.0.CO;2-N

DO - 10.1002/(SICI)1098-2760(19990205)20:3<190::AID-MOP13>3.0.CO;2-N

M3 - Article

VL - 20

SP - 190

EP - 192

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

SN - 0895-2477

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ER -