Terahertz absorption in GaN epitaxial layers under lateral electric field

R. M. Balagula; M. Ya Vinnichenko; G. A. Melentev; M. D. Moldavskaya; V. A. Shalygin; L. E. Vorobjev; D. A. Firsov; S. N. Danilov; S. Suihkonen

doi:10.1088/1742-6596/741/1/012147

Terahertz absorption in GaN epitaxial layers under lateral electric field

R. M. Balagula, M. Ya Vinnichenko, G. A. Melentev, M. D. Moldavskaya, V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, S. N. Danilov, S. Suihkonen

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Abstract

Variation of absorption of terahertz radiation in lateral electric field was investigated in GaN epitaxial layers. Different behaviour of the absorption modulation in electric field was observed for radiation polarized along electric field and perpendicular to it. Joint analysis of optical and transport measurements let us obtain field dependencies of mobility, electron concentration and absorption cross-section. For terahertz radiation polarized perpendicular to the electric field, results are in accordance with Drude model of free electron absorption. Another polarization demonstrates significant deviation that is yet to be studied more thoroughly.

Original language	English
Article number	012147
Journal	Journal of Physics: Conference Series
Volume	741
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/741/1/012147
Publication status	Published - 15 Sept 2016
MoE publication type	A4 Article in a conference publication
Event	3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures - St. Petersburg, Russian Federation Duration: 28 Mar 2016 → 30 Mar 2016

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@article{7341b4524099421fb96bc66ff47ca5b5,

title = "Terahertz absorption in GaN epitaxial layers under lateral electric field",

abstract = "Variation of absorption of terahertz radiation in lateral electric field was investigated in GaN epitaxial layers. Different behaviour of the absorption modulation in electric field was observed for radiation polarized along electric field and perpendicular to it. Joint analysis of optical and transport measurements let us obtain field dependencies of mobility, electron concentration and absorption cross-section. For terahertz radiation polarized perpendicular to the electric field, results are in accordance with Drude model of free electron absorption. Another polarization demonstrates significant deviation that is yet to be studied more thoroughly.",

author = "Balagula, {R. M.} and Vinnichenko, {M. Ya} and Melentev, {G. A.} and Moldavskaya, {M. D.} and Shalygin, {V. A.} and Vorobjev, {L. E.} and Firsov, {D. A.} and Danilov, {S. N.} and S. Suihkonen",

note = "Conference code: 3 M1 - 012147; 3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures ; Conference date: 28-03-2016 Through 30-03-2016",

year = "2016",

month = sep,

day = "15",

doi = "10.1088/1742-6596/741/1/012147",

language = "English",

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journal = "Journal of Physics: Conference Series",

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TY - JOUR

T1 - Terahertz absorption in GaN epitaxial layers under lateral electric field

AU - Balagula, R. M.

AU - Vinnichenko, M. Ya

AU - Melentev, G. A.

AU - Moldavskaya, M. D.

AU - Shalygin, V. A.

AU - Vorobjev, L. E.

AU - Firsov, D. A.

AU - Danilov, S. N.

AU - Suihkonen, S.

N1 - Conference code: 3 M1 - 012147

PY - 2016/9/15

Y1 - 2016/9/15

N2 - Variation of absorption of terahertz radiation in lateral electric field was investigated in GaN epitaxial layers. Different behaviour of the absorption modulation in electric field was observed for radiation polarized along electric field and perpendicular to it. Joint analysis of optical and transport measurements let us obtain field dependencies of mobility, electron concentration and absorption cross-section. For terahertz radiation polarized perpendicular to the electric field, results are in accordance with Drude model of free electron absorption. Another polarization demonstrates significant deviation that is yet to be studied more thoroughly.

AB - Variation of absorption of terahertz radiation in lateral electric field was investigated in GaN epitaxial layers. Different behaviour of the absorption modulation in electric field was observed for radiation polarized along electric field and perpendicular to it. Joint analysis of optical and transport measurements let us obtain field dependencies of mobility, electron concentration and absorption cross-section. For terahertz radiation polarized perpendicular to the electric field, results are in accordance with Drude model of free electron absorption. Another polarization demonstrates significant deviation that is yet to be studied more thoroughly.

U2 - 10.1088/1742-6596/741/1/012147

DO - 10.1088/1742-6596/741/1/012147

M3 - Article in a proceedings journal

SN - 1742-6588

VL - 741

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012147

T2 - 3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures

Y2 - 28 March 2016 through 30 March 2016

ER -

Terahertz absorption in GaN epitaxial layers under lateral electric field

Abstract

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