Ternary composite Si/TiN/MnO2 taper nanorod array for on-chip supercapacitor

Pai Lu, Einar Halvorsen, Per Ohlckers, Lutz Müller, Steffen Leopold, Martin Hoffmann, Kestutis Grigoras, Jouni Ahopelto, Mika Prunnila, Xuyuan Chen

Research output: Contribution to journalArticleScientificpeer-review

9 Citations (Scopus)

Abstract

We present a ternary composite Si/TiN/MnO2 taper nanorod array electrode for large specific capacitance on-chip supercapacitor. The capacitor is based on conformal deposition of pseudo-capacitive MnO2 nano-layer and TiN current collector nano-layer on a silicon taper nanorod array (Si-TNR) scaffold. The key fabrication processes include cyclic deep reactive ion etch (DRIE) of silicon, atomic layer deposition (ALD) of TiN, as well as solution chemical deposition of MnO2. Different growth modes of MnO2 functional layers via electrochemical deposition (ED) and electroless chemical deposition (CD) are investigated in terms of thickness, morphology, and conformality. Optimization of the supercapacitor performance by controlling the loading amount of pseudo-capacitive layer on taper nanorod array scaffold is demonstrated. The electrode design targeting taper nanorod array enables improved and effective mass loading of active material towards high specific capacitance. The obtained Si-TNR/TiN/MnO2 electrode offers areal specific capacitance of 81.6 mF cm-2 as evaluated at 5 mV s-1 scan rate (41.3 mF cm-2 at 200 mV s-1), showing ~70 times improvement in areal capacitance compared to that of the Si-TNR/TiN electrode.
Original languageEnglish
Pages (from-to)397-408
Number of pages12
JournalElectrochimica Acta
Volume248
DOIs
Publication statusPublished - 10 Sep 2017
MoE publication typeA1 Journal article-refereed

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Nanorods
Silicon
Composite materials
Capacitance
Electrodes
Scaffolds
Atomic layer deposition
Supercapacitor
Capacitors
Ions
Fabrication

Keywords

  • taper nanorod array
  • on-chip supercapacitor
  • deep reactive ion etch
  • atomic layer deposition
  • solution chemical deposition
  • Deep reactive ion etch

Cite this

Lu, P., Halvorsen, E., Ohlckers, P., Müller, L., Leopold, S., Hoffmann, M., ... Chen, X. (2017). Ternary composite Si/TiN/MnO2 taper nanorod array for on-chip supercapacitor. Electrochimica Acta, 248, 397-408. https://doi.org/10.1016/j.electacta.2017.07.162
Lu, Pai ; Halvorsen, Einar ; Ohlckers, Per ; Müller, Lutz ; Leopold, Steffen ; Hoffmann, Martin ; Grigoras, Kestutis ; Ahopelto, Jouni ; Prunnila, Mika ; Chen, Xuyuan. / Ternary composite Si/TiN/MnO2 taper nanorod array for on-chip supercapacitor. In: Electrochimica Acta. 2017 ; Vol. 248. pp. 397-408.
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title = "Ternary composite Si/TiN/MnO2 taper nanorod array for on-chip supercapacitor",
abstract = "We present a ternary composite Si/TiN/MnO2 taper nanorod array electrode for large specific capacitance on-chip supercapacitor. The capacitor is based on conformal deposition of pseudo-capacitive MnO2 nano-layer and TiN current collector nano-layer on a silicon taper nanorod array (Si-TNR) scaffold. The key fabrication processes include cyclic deep reactive ion etch (DRIE) of silicon, atomic layer deposition (ALD) of TiN, as well as solution chemical deposition of MnO2. Different growth modes of MnO2 functional layers via electrochemical deposition (ED) and electroless chemical deposition (CD) are investigated in terms of thickness, morphology, and conformality. Optimization of the supercapacitor performance by controlling the loading amount of pseudo-capacitive layer on taper nanorod array scaffold is demonstrated. The electrode design targeting taper nanorod array enables improved and effective mass loading of active material towards high specific capacitance. The obtained Si-TNR/TiN/MnO2 electrode offers areal specific capacitance of 81.6 mF cm-2 as evaluated at 5 mV s-1 scan rate (41.3 mF cm-2 at 200 mV s-1), showing ~70 times improvement in areal capacitance compared to that of the Si-TNR/TiN electrode.",
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author = "Pai Lu and Einar Halvorsen and Per Ohlckers and Lutz M{\"u}ller and Steffen Leopold and Martin Hoffmann and Kestutis Grigoras and Jouni Ahopelto and Mika Prunnila and Xuyuan Chen",
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Ternary composite Si/TiN/MnO2 taper nanorod array for on-chip supercapacitor. / Lu, Pai; Halvorsen, Einar; Ohlckers, Per; Müller, Lutz; Leopold, Steffen; Hoffmann, Martin; Grigoras, Kestutis; Ahopelto, Jouni; Prunnila, Mika; Chen, Xuyuan.

In: Electrochimica Acta, Vol. 248, 10.09.2017, p. 397-408.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Ternary composite Si/TiN/MnO2 taper nanorod array for on-chip supercapacitor

AU - Lu, Pai

AU - Halvorsen, Einar

AU - Ohlckers, Per

AU - Müller, Lutz

AU - Leopold, Steffen

AU - Hoffmann, Martin

AU - Grigoras, Kestutis

AU - Ahopelto, Jouni

AU - Prunnila, Mika

AU - Chen, Xuyuan

PY - 2017/9/10

Y1 - 2017/9/10

N2 - We present a ternary composite Si/TiN/MnO2 taper nanorod array electrode for large specific capacitance on-chip supercapacitor. The capacitor is based on conformal deposition of pseudo-capacitive MnO2 nano-layer and TiN current collector nano-layer on a silicon taper nanorod array (Si-TNR) scaffold. The key fabrication processes include cyclic deep reactive ion etch (DRIE) of silicon, atomic layer deposition (ALD) of TiN, as well as solution chemical deposition of MnO2. Different growth modes of MnO2 functional layers via electrochemical deposition (ED) and electroless chemical deposition (CD) are investigated in terms of thickness, morphology, and conformality. Optimization of the supercapacitor performance by controlling the loading amount of pseudo-capacitive layer on taper nanorod array scaffold is demonstrated. The electrode design targeting taper nanorod array enables improved and effective mass loading of active material towards high specific capacitance. The obtained Si-TNR/TiN/MnO2 electrode offers areal specific capacitance of 81.6 mF cm-2 as evaluated at 5 mV s-1 scan rate (41.3 mF cm-2 at 200 mV s-1), showing ~70 times improvement in areal capacitance compared to that of the Si-TNR/TiN electrode.

AB - We present a ternary composite Si/TiN/MnO2 taper nanorod array electrode for large specific capacitance on-chip supercapacitor. The capacitor is based on conformal deposition of pseudo-capacitive MnO2 nano-layer and TiN current collector nano-layer on a silicon taper nanorod array (Si-TNR) scaffold. The key fabrication processes include cyclic deep reactive ion etch (DRIE) of silicon, atomic layer deposition (ALD) of TiN, as well as solution chemical deposition of MnO2. Different growth modes of MnO2 functional layers via electrochemical deposition (ED) and electroless chemical deposition (CD) are investigated in terms of thickness, morphology, and conformality. Optimization of the supercapacitor performance by controlling the loading amount of pseudo-capacitive layer on taper nanorod array scaffold is demonstrated. The electrode design targeting taper nanorod array enables improved and effective mass loading of active material towards high specific capacitance. The obtained Si-TNR/TiN/MnO2 electrode offers areal specific capacitance of 81.6 mF cm-2 as evaluated at 5 mV s-1 scan rate (41.3 mF cm-2 at 200 mV s-1), showing ~70 times improvement in areal capacitance compared to that of the Si-TNR/TiN electrode.

KW - taper nanorod array

KW - on-chip supercapacitor

KW - deep reactive ion etch

KW - atomic layer deposition

KW - solution chemical deposition

KW - Deep reactive ion etch

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M3 - Article

VL - 248

SP - 397

EP - 408

JO - Electrochimica Acta

JF - Electrochimica Acta

SN - 0013-4686

ER -

Lu P, Halvorsen E, Ohlckers P, Müller L, Leopold S, Hoffmann M et al. Ternary composite Si/TiN/MnO2 taper nanorod array for on-chip supercapacitor. Electrochimica Acta. 2017 Sep 10;248:397-408. https://doi.org/10.1016/j.electacta.2017.07.162