Ternary composite Si/TiN/MnO2 taper nanorod array for on-chip supercapacitor

Pai Lu, Einar Halvorsen, Per Ohlckers, Lutz Müller, Steffen Leopold, Martin Hoffmann, Kestutis Grigoras, Jouni Ahopelto, Mika Prunnila, Xuyuan Chen

    Research output: Contribution to journalArticleScientificpeer-review

    10 Citations (Scopus)

    Abstract

    We present a ternary composite Si/TiN/MnO2 taper nanorod array electrode for large specific capacitance on-chip supercapacitor. The capacitor is based on conformal deposition of pseudo-capacitive MnO2 nano-layer and TiN current collector nano-layer on a silicon taper nanorod array (Si-TNR) scaffold. The key fabrication processes include cyclic deep reactive ion etch (DRIE) of silicon, atomic layer deposition (ALD) of TiN, as well as solution chemical deposition of MnO2. Different growth modes of MnO2 functional layers via electrochemical deposition (ED) and electroless chemical deposition (CD) are investigated in terms of thickness, morphology, and conformality. Optimization of the supercapacitor performance by controlling the loading amount of pseudo-capacitive layer on taper nanorod array scaffold is demonstrated. The electrode design targeting taper nanorod array enables improved and effective mass loading of active material towards high specific capacitance. The obtained Si-TNR/TiN/MnO2 electrode offers areal specific capacitance of 81.6 mF cm-2 as evaluated at 5 mV s-1 scan rate (41.3 mF cm-2 at 200 mV s-1), showing ~70 times improvement in areal capacitance compared to that of the Si-TNR/TiN electrode.
    Original languageEnglish
    Pages (from-to)397-408
    Number of pages12
    JournalElectrochimica Acta
    Volume248
    DOIs
    Publication statusPublished - 10 Sep 2017
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Nanorods
    Silicon
    Composite materials
    Capacitance
    Electrodes
    Scaffolds
    Atomic layer deposition
    Supercapacitor
    Capacitors
    Ions
    Fabrication

    Keywords

    • taper nanorod array
    • on-chip supercapacitor
    • deep reactive ion etch
    • atomic layer deposition
    • solution chemical deposition
    • Deep reactive ion etch

    Cite this

    Lu, P., Halvorsen, E., Ohlckers, P., Müller, L., Leopold, S., Hoffmann, M., ... Chen, X. (2017). Ternary composite Si/TiN/MnO2 taper nanorod array for on-chip supercapacitor. Electrochimica Acta, 248, 397-408. https://doi.org/10.1016/j.electacta.2017.07.162
    Lu, Pai ; Halvorsen, Einar ; Ohlckers, Per ; Müller, Lutz ; Leopold, Steffen ; Hoffmann, Martin ; Grigoras, Kestutis ; Ahopelto, Jouni ; Prunnila, Mika ; Chen, Xuyuan. / Ternary composite Si/TiN/MnO2 taper nanorod array for on-chip supercapacitor. In: Electrochimica Acta. 2017 ; Vol. 248. pp. 397-408.
    @article{02f252732b244b55afe0477df1d04367,
    title = "Ternary composite Si/TiN/MnO2 taper nanorod array for on-chip supercapacitor",
    abstract = "We present a ternary composite Si/TiN/MnO2 taper nanorod array electrode for large specific capacitance on-chip supercapacitor. The capacitor is based on conformal deposition of pseudo-capacitive MnO2 nano-layer and TiN current collector nano-layer on a silicon taper nanorod array (Si-TNR) scaffold. The key fabrication processes include cyclic deep reactive ion etch (DRIE) of silicon, atomic layer deposition (ALD) of TiN, as well as solution chemical deposition of MnO2. Different growth modes of MnO2 functional layers via electrochemical deposition (ED) and electroless chemical deposition (CD) are investigated in terms of thickness, morphology, and conformality. Optimization of the supercapacitor performance by controlling the loading amount of pseudo-capacitive layer on taper nanorod array scaffold is demonstrated. The electrode design targeting taper nanorod array enables improved and effective mass loading of active material towards high specific capacitance. The obtained Si-TNR/TiN/MnO2 electrode offers areal specific capacitance of 81.6 mF cm-2 as evaluated at 5 mV s-1 scan rate (41.3 mF cm-2 at 200 mV s-1), showing ~70 times improvement in areal capacitance compared to that of the Si-TNR/TiN electrode.",
    keywords = "taper nanorod array, on-chip supercapacitor, deep reactive ion etch, atomic layer deposition, solution chemical deposition, Deep reactive ion etch",
    author = "Pai Lu and Einar Halvorsen and Per Ohlckers and Lutz M{\"u}ller and Steffen Leopold and Martin Hoffmann and Kestutis Grigoras and Jouni Ahopelto and Mika Prunnila and Xuyuan Chen",
    year = "2017",
    month = "9",
    day = "10",
    doi = "10.1016/j.electacta.2017.07.162",
    language = "English",
    volume = "248",
    pages = "397--408",
    journal = "Electrochimica Acta",
    issn = "0013-4686",
    publisher = "Elsevier",

    }

    Ternary composite Si/TiN/MnO2 taper nanorod array for on-chip supercapacitor. / Lu, Pai; Halvorsen, Einar; Ohlckers, Per; Müller, Lutz; Leopold, Steffen; Hoffmann, Martin; Grigoras, Kestutis; Ahopelto, Jouni; Prunnila, Mika; Chen, Xuyuan.

    In: Electrochimica Acta, Vol. 248, 10.09.2017, p. 397-408.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Ternary composite Si/TiN/MnO2 taper nanorod array for on-chip supercapacitor

    AU - Lu, Pai

    AU - Halvorsen, Einar

    AU - Ohlckers, Per

    AU - Müller, Lutz

    AU - Leopold, Steffen

    AU - Hoffmann, Martin

    AU - Grigoras, Kestutis

    AU - Ahopelto, Jouni

    AU - Prunnila, Mika

    AU - Chen, Xuyuan

    PY - 2017/9/10

    Y1 - 2017/9/10

    N2 - We present a ternary composite Si/TiN/MnO2 taper nanorod array electrode for large specific capacitance on-chip supercapacitor. The capacitor is based on conformal deposition of pseudo-capacitive MnO2 nano-layer and TiN current collector nano-layer on a silicon taper nanorod array (Si-TNR) scaffold. The key fabrication processes include cyclic deep reactive ion etch (DRIE) of silicon, atomic layer deposition (ALD) of TiN, as well as solution chemical deposition of MnO2. Different growth modes of MnO2 functional layers via electrochemical deposition (ED) and electroless chemical deposition (CD) are investigated in terms of thickness, morphology, and conformality. Optimization of the supercapacitor performance by controlling the loading amount of pseudo-capacitive layer on taper nanorod array scaffold is demonstrated. The electrode design targeting taper nanorod array enables improved and effective mass loading of active material towards high specific capacitance. The obtained Si-TNR/TiN/MnO2 electrode offers areal specific capacitance of 81.6 mF cm-2 as evaluated at 5 mV s-1 scan rate (41.3 mF cm-2 at 200 mV s-1), showing ~70 times improvement in areal capacitance compared to that of the Si-TNR/TiN electrode.

    AB - We present a ternary composite Si/TiN/MnO2 taper nanorod array electrode for large specific capacitance on-chip supercapacitor. The capacitor is based on conformal deposition of pseudo-capacitive MnO2 nano-layer and TiN current collector nano-layer on a silicon taper nanorod array (Si-TNR) scaffold. The key fabrication processes include cyclic deep reactive ion etch (DRIE) of silicon, atomic layer deposition (ALD) of TiN, as well as solution chemical deposition of MnO2. Different growth modes of MnO2 functional layers via electrochemical deposition (ED) and electroless chemical deposition (CD) are investigated in terms of thickness, morphology, and conformality. Optimization of the supercapacitor performance by controlling the loading amount of pseudo-capacitive layer on taper nanorod array scaffold is demonstrated. The electrode design targeting taper nanorod array enables improved and effective mass loading of active material towards high specific capacitance. The obtained Si-TNR/TiN/MnO2 electrode offers areal specific capacitance of 81.6 mF cm-2 as evaluated at 5 mV s-1 scan rate (41.3 mF cm-2 at 200 mV s-1), showing ~70 times improvement in areal capacitance compared to that of the Si-TNR/TiN electrode.

    KW - taper nanorod array

    KW - on-chip supercapacitor

    KW - deep reactive ion etch

    KW - atomic layer deposition

    KW - solution chemical deposition

    KW - Deep reactive ion etch

    UR - http://www.scopus.com/inward/record.url?scp=85026671516&partnerID=8YFLogxK

    U2 - 10.1016/j.electacta.2017.07.162

    DO - 10.1016/j.electacta.2017.07.162

    M3 - Article

    VL - 248

    SP - 397

    EP - 408

    JO - Electrochimica Acta

    JF - Electrochimica Acta

    SN - 0013-4686

    ER -

    Lu P, Halvorsen E, Ohlckers P, Müller L, Leopold S, Hoffmann M et al. Ternary composite Si/TiN/MnO2 taper nanorod array for on-chip supercapacitor. Electrochimica Acta. 2017 Sep 10;248:397-408. https://doi.org/10.1016/j.electacta.2017.07.162