The application of dry photoresists in fabricating cost-effective tapered through-silicon vias and redistribution lines in a single step

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Abstract

In this paper, we report a simple and cost-effective technique to fabricate a partially electroplated tapered through-silicon via (TSV) and redistribution line (RDL)-like structures on the field in a single process step using dry laminated photoresists. An array of 100 µm deep positively tapered silicon vias was etched by a three-step non-Bosch plasma etching process. Insulation, diffusion barrier and seed layers were deposited by low-temperature plasma-enhanced chemical vapor deposition and sputtering processes, respectively. A 15 µm thick dry MXA115 photoresist was laminated on the wafer by a roller-less vacuum lamination process. The dry resist allows a satisfactory patterning of the RDL-like structures by eliminating the chances of resist residuals falling in the etched TSVs. Direct-current (dc) electroplating was used to deposit 10 µm thick copper layers on the via sidewalls as well as on the field. Therefore, the electroplating not only partially fills the vias but also forms the RDL structures at the same time. Since both TSVs and RDLs are fabricated together in a single process step, several conventional process steps such as over-burden polishing, lithography, and metal etching were avoided. Compared to the conventional TSV fabrication processes, this dry resist lithography-based method turned out to be simple and very cost-effective in making complex TSV interconnects.
Original languageEnglish
Article number025020
Number of pages11
JournalJournal of Micromechanics and Microengineering
Volume21
Issue number2
DOIs
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

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Silicon
Photoresists
Electroplating
Burden (metallurgy)
Lithography
Costs
Diffusion barriers
Plasma etching
Plasma enhanced chemical vapor deposition
Polishing
Sputtering
Seed
Insulation
Copper
Etching
Deposits
Metals
Vacuum
Fabrication
Temperature

Cite this

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title = "The application of dry photoresists in fabricating cost-effective tapered through-silicon vias and redistribution lines in a single step",
abstract = "In this paper, we report a simple and cost-effective technique to fabricate a partially electroplated tapered through-silicon via (TSV) and redistribution line (RDL)-like structures on the field in a single process step using dry laminated photoresists. An array of 100 µm deep positively tapered silicon vias was etched by a three-step non-Bosch plasma etching process. Insulation, diffusion barrier and seed layers were deposited by low-temperature plasma-enhanced chemical vapor deposition and sputtering processes, respectively. A 15 µm thick dry MXA115 photoresist was laminated on the wafer by a roller-less vacuum lamination process. The dry resist allows a satisfactory patterning of the RDL-like structures by eliminating the chances of resist residuals falling in the etched TSVs. Direct-current (dc) electroplating was used to deposit 10 µm thick copper layers on the via sidewalls as well as on the field. Therefore, the electroplating not only partially fills the vias but also forms the RDL structures at the same time. Since both TSVs and RDLs are fabricated together in a single process step, several conventional process steps such as over-burden polishing, lithography, and metal etching were avoided. Compared to the conventional TSV fabrication processes, this dry resist lithography-based method turned out to be simple and very cost-effective in making complex TSV interconnects.",
author = "Pradeep Dixit and Jaakko Salonen and Harri Pohjonen and Philippe Monnoyer",
year = "2011",
doi = "10.1088/0960-1317/21/2/025020",
language = "English",
volume = "21",
journal = "Journal of Micromechanics and Microengineering",
issn = "0960-1317",
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T1 - The application of dry photoresists in fabricating cost-effective tapered through-silicon vias and redistribution lines in a single step

AU - Dixit, Pradeep

AU - Salonen, Jaakko

AU - Pohjonen, Harri

AU - Monnoyer, Philippe

PY - 2011

Y1 - 2011

N2 - In this paper, we report a simple and cost-effective technique to fabricate a partially electroplated tapered through-silicon via (TSV) and redistribution line (RDL)-like structures on the field in a single process step using dry laminated photoresists. An array of 100 µm deep positively tapered silicon vias was etched by a three-step non-Bosch plasma etching process. Insulation, diffusion barrier and seed layers were deposited by low-temperature plasma-enhanced chemical vapor deposition and sputtering processes, respectively. A 15 µm thick dry MXA115 photoresist was laminated on the wafer by a roller-less vacuum lamination process. The dry resist allows a satisfactory patterning of the RDL-like structures by eliminating the chances of resist residuals falling in the etched TSVs. Direct-current (dc) electroplating was used to deposit 10 µm thick copper layers on the via sidewalls as well as on the field. Therefore, the electroplating not only partially fills the vias but also forms the RDL structures at the same time. Since both TSVs and RDLs are fabricated together in a single process step, several conventional process steps such as over-burden polishing, lithography, and metal etching were avoided. Compared to the conventional TSV fabrication processes, this dry resist lithography-based method turned out to be simple and very cost-effective in making complex TSV interconnects.

AB - In this paper, we report a simple and cost-effective technique to fabricate a partially electroplated tapered through-silicon via (TSV) and redistribution line (RDL)-like structures on the field in a single process step using dry laminated photoresists. An array of 100 µm deep positively tapered silicon vias was etched by a three-step non-Bosch plasma etching process. Insulation, diffusion barrier and seed layers were deposited by low-temperature plasma-enhanced chemical vapor deposition and sputtering processes, respectively. A 15 µm thick dry MXA115 photoresist was laminated on the wafer by a roller-less vacuum lamination process. The dry resist allows a satisfactory patterning of the RDL-like structures by eliminating the chances of resist residuals falling in the etched TSVs. Direct-current (dc) electroplating was used to deposit 10 µm thick copper layers on the via sidewalls as well as on the field. Therefore, the electroplating not only partially fills the vias but also forms the RDL structures at the same time. Since both TSVs and RDLs are fabricated together in a single process step, several conventional process steps such as over-burden polishing, lithography, and metal etching were avoided. Compared to the conventional TSV fabrication processes, this dry resist lithography-based method turned out to be simple and very cost-effective in making complex TSV interconnects.

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DO - 10.1088/0960-1317/21/2/025020

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