The deactivation of nitrogen acceptors in ZnSxSel1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements

J. Oila (Corresponding Author), T. Laine, Pekka Hautojärvi, Markus Pessa, Jari Likonen, K. Saarinen, P. Uusimaa

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    Abstract

    We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry and capacitance–voltage measurements. We have applied this method to study the nitrogen doping in ZnSxSe1−x and MgyZn1−ySxSe1−x and we conclude that in addition to isolated acceptor impurities NSe−, nitrogen atoms are also situated at high concentrations in compensating donors, most probably in (ZniNSe)1+ and (VSeNSe)1+ pairs, or in electrically neutral form, leading to electrical compensation of p-type material.
    Original languageEnglish
    Pages (from-to)902-906
    Number of pages5
    JournalPhysica B: Condensed Matter
    Volume273-274
    DOIs
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

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