The deactivation of nitrogen acceptors in ZnSxSel1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements

J. Oila (Corresponding Author), T. Laine, Pekka Hautojärvi, Markus Pessa, Jari Likonen, K. Saarinen, P. Uusimaa

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry and capacitance–voltage measurements. We have applied this method to study the nitrogen doping in ZnSxSe1−x and MgyZn1−ySxSe1−x and we conclude that in addition to isolated acceptor impurities NSe−, nitrogen atoms are also situated at high concentrations in compensating donors, most probably in (ZniNSe)1+ and (VSeNSe)1+ pairs, or in electrically neutral form, leading to electrical compensation of p-type material.
Original languageEnglish
Pages (from-to)902-906
Number of pages5
JournalPhysica B: Condensed Matter
Volume273-274
DOIs
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

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Positron annihilation
Secondary ion mass spectrometry
positron annihilation
deactivation
secondary ion mass spectrometry
Nitrogen
Doping (additives)
nitrogen
nitrogen atoms
Impurities
impurities
Atoms
Compensation and Redress

Cite this

Oila, J. ; Laine, T. ; Hautojärvi, Pekka ; Pessa, Markus ; Likonen, Jari ; Saarinen, K. ; Uusimaa, P. / The deactivation of nitrogen acceptors in ZnSxSel1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements. In: Physica B: Condensed Matter. 1999 ; Vol. 273-274. pp. 902-906.
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abstract = "We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry and capacitance–voltage measurements. We have applied this method to study the nitrogen doping in ZnSxSe1−x and MgyZn1−ySxSe1−x and we conclude that in addition to isolated acceptor impurities NSe−, nitrogen atoms are also situated at high concentrations in compensating donors, most probably in (ZniNSe)1+ and (VSeNSe)1+ pairs, or in electrically neutral form, leading to electrical compensation of p-type material.",
author = "J. Oila and T. Laine and Pekka Hautoj{\"a}rvi and Markus Pessa and Jari Likonen and K. Saarinen and P. Uusimaa",
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language = "English",
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The deactivation of nitrogen acceptors in ZnSxSel1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements. / Oila, J. (Corresponding Author); Laine, T.; Hautojärvi, Pekka; Pessa, Markus; Likonen, Jari; Saarinen, K.; Uusimaa, P.

In: Physica B: Condensed Matter, Vol. 273-274, 1999, p. 902-906.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - The deactivation of nitrogen acceptors in ZnSxSel1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements

AU - Oila, J.

AU - Laine, T.

AU - Hautojärvi, Pekka

AU - Pessa, Markus

AU - Likonen, Jari

AU - Saarinen, K.

AU - Uusimaa, P.

N1 - Project code: KET4134

PY - 1999

Y1 - 1999

N2 - We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry and capacitance–voltage measurements. We have applied this method to study the nitrogen doping in ZnSxSe1−x and MgyZn1−ySxSe1−x and we conclude that in addition to isolated acceptor impurities NSe−, nitrogen atoms are also situated at high concentrations in compensating donors, most probably in (ZniNSe)1+ and (VSeNSe)1+ pairs, or in electrically neutral form, leading to electrical compensation of p-type material.

AB - We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry and capacitance–voltage measurements. We have applied this method to study the nitrogen doping in ZnSxSe1−x and MgyZn1−ySxSe1−x and we conclude that in addition to isolated acceptor impurities NSe−, nitrogen atoms are also situated at high concentrations in compensating donors, most probably in (ZniNSe)1+ and (VSeNSe)1+ pairs, or in electrically neutral form, leading to electrical compensation of p-type material.

U2 - 10.1016/S0921-4526(99)00550-5

DO - 10.1016/S0921-4526(99)00550-5

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VL - 273-274

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JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

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