The deactivation of nitrogen acceptors in ZnSxSel1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements

J. Oila (Corresponding Author), T. Laine, Pekka Hautojärvi, Markus Pessa, Jari Likonen, K. Saarinen, P. Uusimaa

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)

    Abstract

    We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry and capacitance–voltage measurements. We have applied this method to study the nitrogen doping in ZnSxSe1−x and MgyZn1−ySxSe1−x and we conclude that in addition to isolated acceptor impurities NSe−, nitrogen atoms are also situated at high concentrations in compensating donors, most probably in (ZniNSe)1+ and (VSeNSe)1+ pairs, or in electrically neutral form, leading to electrical compensation of p-type material.
    Original languageEnglish
    Pages (from-to)902-906
    Number of pages5
    JournalPhysica B: Condensed Matter
    Volume273-274
    DOIs
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Positron annihilation
    Secondary ion mass spectrometry
    positron annihilation
    deactivation
    secondary ion mass spectrometry
    Nitrogen
    Doping (additives)
    nitrogen
    nitrogen atoms
    Impurities
    impurities
    Atoms
    Compensation and Redress

    Cite this

    Oila, J. ; Laine, T. ; Hautojärvi, Pekka ; Pessa, Markus ; Likonen, Jari ; Saarinen, K. ; Uusimaa, P. / The deactivation of nitrogen acceptors in ZnSxSel1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements. In: Physica B: Condensed Matter. 1999 ; Vol. 273-274. pp. 902-906.
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    title = "The deactivation of nitrogen acceptors in ZnSxSel1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements",
    abstract = "We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry and capacitance–voltage measurements. We have applied this method to study the nitrogen doping in ZnSxSe1−x and MgyZn1−ySxSe1−x and we conclude that in addition to isolated acceptor impurities NSe−, nitrogen atoms are also situated at high concentrations in compensating donors, most probably in (ZniNSe)1+ and (VSeNSe)1+ pairs, or in electrically neutral form, leading to electrical compensation of p-type material.",
    author = "J. Oila and T. Laine and Pekka Hautoj{\"a}rvi and Markus Pessa and Jari Likonen and K. Saarinen and P. Uusimaa",
    note = "Project code: KET4134",
    year = "1999",
    doi = "10.1016/S0921-4526(99)00550-5",
    language = "English",
    volume = "273-274",
    pages = "902--906",
    journal = "Physica B: Condensed Matter",
    issn = "0921-4526",
    publisher = "Elsevier",

    }

    The deactivation of nitrogen acceptors in ZnSxSel1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements. / Oila, J. (Corresponding Author); Laine, T.; Hautojärvi, Pekka; Pessa, Markus; Likonen, Jari; Saarinen, K.; Uusimaa, P.

    In: Physica B: Condensed Matter, Vol. 273-274, 1999, p. 902-906.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - The deactivation of nitrogen acceptors in ZnSxSel1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements

    AU - Oila, J.

    AU - Laine, T.

    AU - Hautojärvi, Pekka

    AU - Pessa, Markus

    AU - Likonen, Jari

    AU - Saarinen, K.

    AU - Uusimaa, P.

    N1 - Project code: KET4134

    PY - 1999

    Y1 - 1999

    N2 - We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry and capacitance–voltage measurements. We have applied this method to study the nitrogen doping in ZnSxSe1−x and MgyZn1−ySxSe1−x and we conclude that in addition to isolated acceptor impurities NSe−, nitrogen atoms are also situated at high concentrations in compensating donors, most probably in (ZniNSe)1+ and (VSeNSe)1+ pairs, or in electrically neutral form, leading to electrical compensation of p-type material.

    AB - We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry and capacitance–voltage measurements. We have applied this method to study the nitrogen doping in ZnSxSe1−x and MgyZn1−ySxSe1−x and we conclude that in addition to isolated acceptor impurities NSe−, nitrogen atoms are also situated at high concentrations in compensating donors, most probably in (ZniNSe)1+ and (VSeNSe)1+ pairs, or in electrically neutral form, leading to electrical compensation of p-type material.

    U2 - 10.1016/S0921-4526(99)00550-5

    DO - 10.1016/S0921-4526(99)00550-5

    M3 - Article

    VL - 273-274

    SP - 902

    EP - 906

    JO - Physica B: Condensed Matter

    JF - Physica B: Condensed Matter

    SN - 0921-4526

    ER -