Abstract
We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry and capacitance–voltage measurements. We have applied this method to study the nitrogen doping in ZnSxSe1−x and MgyZn1−ySxSe1−x and we conclude that in addition to isolated acceptor impurities NSe−, nitrogen atoms are also situated at high concentrations in compensating donors, most probably in (ZniNSe)1+ and (VSeNSe)1+ pairs, or in electrically neutral form, leading to electrical compensation of p-type material.
Original language | English |
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Pages (from-to) | 902-906 |
Number of pages | 5 |
Journal | Physica B: Condensed Matter |
Volume | 273-274 |
DOIs | |
Publication status | Published - 1999 |
MoE publication type | A1 Journal article-refereed |