We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry and capacitance–voltage measurements. We have applied this method to study the nitrogen doping in ZnSxSe1−x and MgyZn1−ySxSe1−x and we conclude that in addition to isolated acceptor impurities NSe−, nitrogen atoms are also situated at high concentrations in compensating donors, most probably in (ZniNSe)1+ and (VSeNSe)1+ pairs, or in electrically neutral form, leading to electrical compensation of p-type material.
Oila, J., Laine, T., Hautojärvi, P., Pessa, M., Likonen, J., Saarinen, K., & Uusimaa, P. (1999). The deactivation of nitrogen acceptors in ZnSxSel1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements. Physica B: Condensed Matter, 273-274, 902-906. https://doi.org/10.1016/S0921-4526(99)00550-5