The deactivation of nitrogen acceptors in ZnSxSel1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements

J. Oila; K. Saarinen; T. Laine; Pekka Hautojärvi; P. Uusimaa; Markus Pessa; Jari Likonen

doi:10.1016/S0921-4526(99)00550-5

The deactivation of nitrogen acceptors in ZnS_xSel_1-x and Mg_yZn_1-yS_xSe_1-x studied by combining positron annihilation, SIMS, and CV measurements

J. Oila^*
, K. Saarinen
, T. Laine
, Pekka Hautojärvi
, P. Uusimaa
, Markus Pessa
, Jari Likonen

^*Corresponding author for this work

Helsinki University of Technology
Tampere University of Technology (TUT)

Research output: Contribution to journal › Article › Scientific › peer-review

1 Citation (Scopus)

Abstract

We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry and capacitance–voltage measurements. We have applied this method to study the nitrogen doping in ZnS_xSe_1−xand Mg_yZn_1−yS_xSe_1−x and we conclude that in addition to isolated acceptor impurities N_Se−, nitrogen atoms are also situated at high concentrations in compensating donors, most probably in (Zn_iN_Se)¹⁺ and (V_SeN_Se)¹⁺ pairs, or in electrically neutral form, leading to electrical compensation of p-type material.

Original language	English
Pages (from-to)	902-906
Journal	Physica B: Condensed Matter
Volume	273-274
DOIs	https://doi.org/10.1016/S0921-4526(99)00550-5
Publication status	Published - 1999
MoE publication type	A1 Journal article-refereed

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@article{0ca16f24587e4f3da02717469703a2af,

title = "The deactivation of nitrogen acceptors in ZnSxSel1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements",

abstract = "We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry and capacitance–voltage measurements. We have applied this method to study the nitrogen doping in ZnSxSe1−x and MgyZn1−ySxSe1−x and we conclude that in addition to isolated acceptor impurities NSe−, nitrogen atoms are also situated at high concentrations in compensating donors, most probably in (ZniNSe)1+ and (VSeNSe)1+ pairs, or in electrically neutral form, leading to electrical compensation of p-type material.",

author = "J. Oila and K. Saarinen and T. Laine and Pekka Hautoj{\"a}rvi and P. Uusimaa and Markus Pessa and Jari Likonen",

note = "Project code: KET4134",

year = "1999",

doi = "10.1016/S0921-4526(99)00550-5",

language = "English",

volume = "273-274",

pages = "902--906",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

}

TY - JOUR

T1 - The deactivation of nitrogen acceptors in ZnSxSel1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements

AU - Oila, J.

AU - Saarinen, K.

AU - Laine, T.

AU - Hautojärvi, Pekka

AU - Uusimaa, P.

AU - Pessa, Markus

AU - Likonen, Jari

N1 - Project code: KET4134

PY - 1999

Y1 - 1999

N2 - We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry and capacitance–voltage measurements. We have applied this method to study the nitrogen doping in ZnSxSe1−x and MgyZn1−ySxSe1−x and we conclude that in addition to isolated acceptor impurities NSe−, nitrogen atoms are also situated at high concentrations in compensating donors, most probably in (ZniNSe)1+ and (VSeNSe)1+ pairs, or in electrically neutral form, leading to electrical compensation of p-type material.

AB - We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry and capacitance–voltage measurements. We have applied this method to study the nitrogen doping in ZnSxSe1−x and MgyZn1−ySxSe1−x and we conclude that in addition to isolated acceptor impurities NSe−, nitrogen atoms are also situated at high concentrations in compensating donors, most probably in (ZniNSe)1+ and (VSeNSe)1+ pairs, or in electrically neutral form, leading to electrical compensation of p-type material.

U2 - 10.1016/S0921-4526(99)00550-5

DO - 10.1016/S0921-4526(99)00550-5

M3 - Article

SN - 0921-4526

VL - 273-274

SP - 902

EP - 906

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

The deactivation of nitrogen acceptors in ZnSxSel1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements

Abstract

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The deactivation of nitrogen acceptors in ZnS_xSel_1-x and Mg_yZn_1-yS_xSe_1-x studied by combining positron annihilation, SIMS, and CV measurements