The effect of ion beam mixing on SIMS depth resolution

Jari Likonen, Mikko Hautala, Ilkka Koponen

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    Abstract

    We have studied the mixing of a bilayer sample interface. The AuPt bilayer was sectioned in a SIMS apparatus in order to gain information on the influence of atomic mixing on depth resolution. Experiments were performed with Ar+ sputter ions at energy 5 keV, bombarding at an angle of 48°.
    The experimental decay length which characterizes the exponential falloff is 21 A. Collisional mixing and thermal spike mixing have been calculated with no free parameters. The decay lengths from collisional and spike mixing in this case study are 9.5 and 25 Å, respectively.
    Collisional mixing thus gives a lower and the simple thermal spike model an upper limit for the broadening.
    Original languageEnglish
    Pages (from-to)149-152
    JournalNuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
    Volume64
    Issue number1-4
    DOIs
    Publication statusPublished - 1992
    MoE publication typeA1 Journal article-refereed

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