The effect of ion-irradiation and rapid thermal annealing on TiSieand MoSie

Leif Groberg, Christos Krontiras, Jaakko Saarilahti, Ilkka Suni

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

The effects of ion-irradiation and subsequent rapid thermal annealing have been studied in thin TiSif and MoSie films. A substantial increase in the filM resistivities is observed for As' implantations up to a dose of 101a isions/cam. An almost complete recovery of the ion induced damage is obtained in TiSie after rapid thermal annealing for 10 sec in the 500 to 60000 range. In the case of MoSi, 10 sec at 1OOOC is required to attain the initial resistivity level.

Original languageEnglish
Title of host publicationESSDERC '87
Subtitle of host publication17th European Solid State Device Research Conference
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages209-212
ISBN (Print)978-0-4447-0477-1
Publication statusPublished - 1 Jan 1987
MoE publication typeA4 Article in a conference publication
Event17th European Solid State Device Research Conference, ESSDERC 1987 - Bologna, Italy
Duration: 14 Sep 198717 Sep 1987

Conference

Conference17th European Solid State Device Research Conference, ESSDERC 1987
CountryItaly
CityBologna
Period14/09/8717/09/87

Fingerprint

Rapid thermal annealing
Ion bombardment
Cams
Recovery
Ions

Cite this

Groberg, L., Krontiras, C., Saarilahti, J., & Suni, I. (1987). The effect of ion-irradiation and rapid thermal annealing on TiSieand MoSie. In ESSDERC '87: 17th European Solid State Device Research Conference (pp. 209-212). [5436541] Institute of Electrical and Electronic Engineers IEEE.
Groberg, Leif ; Krontiras, Christos ; Saarilahti, Jaakko ; Suni, Ilkka. / The effect of ion-irradiation and rapid thermal annealing on TiSieand MoSie. ESSDERC '87: 17th European Solid State Device Research Conference. Institute of Electrical and Electronic Engineers IEEE, 1987. pp. 209-212
@inproceedings{149fe7ee73294c00977d57afe8ac6d26,
title = "The effect of ion-irradiation and rapid thermal annealing on TiSieand MoSie",
abstract = "The effects of ion-irradiation and subsequent rapid thermal annealing have been studied in thin TiSif and MoSie films. A substantial increase in the filM resistivities is observed for As' implantations up to a dose of 101a isions/cam. An almost complete recovery of the ion induced damage is obtained in TiSie after rapid thermal annealing for 10 sec in the 500 to 60000 range. In the case of MoSi, 10 sec at 1OOOC is required to attain the initial resistivity level.",
author = "Leif Groberg and Christos Krontiras and Jaakko Saarilahti and Ilkka Suni",
year = "1987",
month = "1",
day = "1",
language = "English",
isbn = "978-0-4447-0477-1",
pages = "209--212",
booktitle = "ESSDERC '87",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
address = "United States",

}

Groberg, L, Krontiras, C, Saarilahti, J & Suni, I 1987, The effect of ion-irradiation and rapid thermal annealing on TiSieand MoSie. in ESSDERC '87: 17th European Solid State Device Research Conference., 5436541, Institute of Electrical and Electronic Engineers IEEE, pp. 209-212, 17th European Solid State Device Research Conference, ESSDERC 1987, Bologna, Italy, 14/09/87.

The effect of ion-irradiation and rapid thermal annealing on TiSieand MoSie. / Groberg, Leif; Krontiras, Christos; Saarilahti, Jaakko; Suni, Ilkka.

ESSDERC '87: 17th European Solid State Device Research Conference. Institute of Electrical and Electronic Engineers IEEE, 1987. p. 209-212 5436541.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - The effect of ion-irradiation and rapid thermal annealing on TiSieand MoSie

AU - Groberg, Leif

AU - Krontiras, Christos

AU - Saarilahti, Jaakko

AU - Suni, Ilkka

PY - 1987/1/1

Y1 - 1987/1/1

N2 - The effects of ion-irradiation and subsequent rapid thermal annealing have been studied in thin TiSif and MoSie films. A substantial increase in the filM resistivities is observed for As' implantations up to a dose of 101a isions/cam. An almost complete recovery of the ion induced damage is obtained in TiSie after rapid thermal annealing for 10 sec in the 500 to 60000 range. In the case of MoSi, 10 sec at 1OOOC is required to attain the initial resistivity level.

AB - The effects of ion-irradiation and subsequent rapid thermal annealing have been studied in thin TiSif and MoSie films. A substantial increase in the filM resistivities is observed for As' implantations up to a dose of 101a isions/cam. An almost complete recovery of the ion induced damage is obtained in TiSie after rapid thermal annealing for 10 sec in the 500 to 60000 range. In the case of MoSi, 10 sec at 1OOOC is required to attain the initial resistivity level.

UR - http://www.scopus.com/inward/record.url?scp=84907843202&partnerID=8YFLogxK

M3 - Conference article in proceedings

SN - 978-0-4447-0477-1

SP - 209

EP - 212

BT - ESSDERC '87

PB - Institute of Electrical and Electronic Engineers IEEE

ER -

Groberg L, Krontiras C, Saarilahti J, Suni I. The effect of ion-irradiation and rapid thermal annealing on TiSieand MoSie. In ESSDERC '87: 17th European Solid State Device Research Conference. Institute of Electrical and Electronic Engineers IEEE. 1987. p. 209-212. 5436541