Abstract
The effects of ion-irradiation and subsequent rapid thermal annealing have been studied in thin TiSif and MoSie films. A substantial increase in the filM resistivities is observed for As' implantations up to a dose of 101a isions/cam. An almost complete recovery of the ion induced damage is obtained in TiSie after rapid thermal annealing for 10 sec in the 500 to 60000 range. In the case of MoSi, 10 sec at 1OOOC is required to attain the initial resistivity level.
| Original language | English |
|---|---|
| Title of host publication | ESSDERC '87 |
| Subtitle of host publication | 17th European Solid State Device Research Conference |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| Pages | 209-212 |
| ISBN (Print) | 978-0-444-70477-1 |
| Publication status | Published - 1 Jan 1987 |
| MoE publication type | A4 Article in a conference publication |
| Event | 17th European Solid State Device Research Conference, ESSDERC 1987 - Bologna, Italy Duration: 14 Sept 1987 → 17 Sept 1987 |
Conference
| Conference | 17th European Solid State Device Research Conference, ESSDERC 1987 |
|---|---|
| Country/Territory | Italy |
| City | Bologna |
| Period | 14/09/87 → 17/09/87 |