The effect of ion-irradiation and rapid thermal annealing on TiSieand MoSie

Leif Grönberg, Christos Krontiras, Jaakko Saarilahti, Ilkka Suni

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    The effects of ion-irradiation and subsequent rapid thermal annealing have been studied in thin TiSif and MoSie films. A substantial increase in the filM resistivities is observed for As' implantations up to a dose of 101a isions/cam. An almost complete recovery of the ion induced damage is obtained in TiSie after rapid thermal annealing for 10 sec in the 500 to 60000 range. In the case of MoSi, 10 sec at 1OOOC is required to attain the initial resistivity level.

    Original languageEnglish
    Title of host publicationESSDERC '87
    Subtitle of host publication17th European Solid State Device Research Conference
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages209-212
    ISBN (Print)978-0-444-70477-1
    Publication statusPublished - 1 Jan 1987
    MoE publication typeA4 Article in a conference publication
    Event17th European Solid State Device Research Conference, ESSDERC 1987 - Bologna, Italy
    Duration: 14 Sep 198717 Sep 1987

    Conference

    Conference17th European Solid State Device Research Conference, ESSDERC 1987
    CountryItaly
    CityBologna
    Period14/09/8717/09/87

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