The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method

J. Härkönen; Eija Maarit Tuominen; E. Tuovinen; K. Lassila-Perini; P. Mehtälä; S. Nummela; J. Nysten; P. Heikkilä; V. Ovchinnikov; M. Palokangas; M. Yli-Koski; L. Palmu; S. Kallijärvi; T. Alanko; P. Laitinen; A. Pirojenko; I. Riihimäki; G. Tiourine; A. Virtanen

doi:10.1109/TNS.2002.805345

The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method

J. Härkönen, Eija Maarit Tuominen, E. Tuovinen, K. Lassila-Perini, P. Mehtälä, S. Nummela, J. Nysten, P. Heikkilä, V. Ovchinnikov, M. Palokangas, M. Yli-Koski, L. Palmu, S. Kallijärvi, T. Alanko, P. Laitinen, A. Pirojenko, I. Riihimäki, G. Tiourine, A. Virtanen

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Abstract

The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extract minority carrier diffusion lengths of the silicon samples. Adding oxygen to silicon was found to improve the radiation hardness of silicon. The effect was visible in minority carrier diffusion lengths as well as in reverse bias leakage currents. The suitability of SPV method for characterizing irradiated silicon samples was proved.

Original language	English
Pages (from-to)	2910-2913
Journal	IEEE Transactions on Nuclear Science
Volume	49
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2002.805345
Publication status	Published - 2002
MoE publication type	A1 Journal article-refereed

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Härkönen, J., Tuominen, E. M., Tuovinen, E., Lassila-Perini, K., Mehtälä, P., Nummela, S., Nysten, J., Heikkilä, P., Ovchinnikov, V., Palokangas, M., Yli-Koski, M., Palmu, L., Kallijärvi, S., Alanko, T., Laitinen, P., Pirojenko, A., Riihimäki, I., Tiourine, G., & Virtanen, A. (2002). The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method. IEEE Transactions on Nuclear Science, 49(6), 2910-2913. https://doi.org/10.1109/TNS.2002.805345

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title = "The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method",

abstract = "The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extract minority carrier diffusion lengths of the silicon samples. Adding oxygen to silicon was found to improve the radiation hardness of silicon. The effect was visible in minority carrier diffusion lengths as well as in reverse bias leakage currents. The suitability of SPV method for characterizing irradiated silicon samples was proved.",

author = "J. H{\"a}rk{\"o}nen and Tuominen, {Eija Maarit} and E. Tuovinen and K. Lassila-Perini and P. Meht{\"a}l{\"a} and S. Nummela and J. Nysten and P. Heikkil{\"a} and V. Ovchinnikov and M. Palokangas and M. Yli-Koski and L. Palmu and S. Kallij{\"a}rvi and T. Alanko and P. Laitinen and A. Pirojenko and I. Riihim{\"a}ki and G. Tiourine and A. Virtanen",

year = "2002",

doi = "10.1109/TNS.2002.805345",

language = "English",

volume = "49",

pages = "2910--2913",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

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Härkönen, J, Tuominen, EM, Tuovinen, E, Lassila-Perini, K, Mehtälä, P, Nummela, S, Nysten, J, Heikkilä, P, Ovchinnikov, V, Palokangas, M, Yli-Koski, M, Palmu, L, Kallijärvi, S, Alanko, T, Laitinen, P, Pirojenko, A, Riihimäki, I, Tiourine, G & Virtanen, A 2002, 'The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method', IEEE Transactions on Nuclear Science, vol. 49, no. 6, pp. 2910-2913. https://doi.org/10.1109/TNS.2002.805345

TY - JOUR

T1 - The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method

AU - Härkönen, J.

AU - Tuominen, Eija Maarit

AU - Tuovinen, E.

AU - Lassila-Perini, K.

AU - Mehtälä, P.

AU - Nummela, S.

AU - Nysten, J.

AU - Heikkilä, P.

AU - Ovchinnikov, V.

AU - Palokangas, M.

AU - Yli-Koski, M.

AU - Palmu, L.

AU - Kallijärvi, S.

AU - Alanko, T.

AU - Laitinen, P.

AU - Pirojenko, A.

AU - Riihimäki, I.

AU - Tiourine, G.

AU - Virtanen, A.

PY - 2002

Y1 - 2002

N2 - The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extract minority carrier diffusion lengths of the silicon samples. Adding oxygen to silicon was found to improve the radiation hardness of silicon. The effect was visible in minority carrier diffusion lengths as well as in reverse bias leakage currents. The suitability of SPV method for characterizing irradiated silicon samples was proved.

AB - The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extract minority carrier diffusion lengths of the silicon samples. Adding oxygen to silicon was found to improve the radiation hardness of silicon. The effect was visible in minority carrier diffusion lengths as well as in reverse bias leakage currents. The suitability of SPV method for characterizing irradiated silicon samples was proved.

U2 - 10.1109/TNS.2002.805345

DO - 10.1109/TNS.2002.805345

M3 - Article

SN - 0018-9499

VL - 49

SP - 2910

EP - 2913

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6

ER -

The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method

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