Abstract
Direct UV photopatternability was achieved using methacrylic acid modified tin(IV) isopropoxide and antimony(III) isopropoxide as precursors. Spin-on deposited films were lithographically patterned using a UV light source (I line) with a contact mask.
After developing, the structures were thermally converted to crystalline, conductive pure and Sb-doped tin oxides. The effect of the UV irradiation on the chemical composition, surface morphology, and crystal size of the fabricated films was investigated using XPS, AFM, and XRD, respectively.
We found that the UV irradiation lowered the crystallization temperature, increased the crystal size in the pure or slightly doped samples, and resulted in a more homogeneous Sb dopant distribution.
The increase in crystal size was found to correlate with a large increase in conductivity (up to 1500%).
| Original language | English |
|---|---|
| Pages (from-to) | 4443-4447 |
| Journal | Chemistry of Materials |
| Volume | 14 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2002 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- direct UV-photopatterning
- photopatterning
- thin films
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The effect of UV irradiation on antimony-doped tin dioxide thin films derived from methacrylic acid modified precursors. / Kololuoma, Terho (Corresponding Author); Johansson, L.-S.; Campbell, J.; Tolonen, A.; Halttunen, Marita; Haatainen, T.; Rantala, Juha.
In: Chemistry of Materials, Vol. 14, No. 10, 2002, p. 4443-4447.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - The effect of UV irradiation on antimony-doped tin dioxide thin films derived from methacrylic acid modified precursors
AU - Kololuoma, Terho
AU - Johansson, L.-S.
AU - Campbell, J.
AU - Tolonen, A.
AU - Halttunen, Marita
AU - Haatainen, T.
AU - Rantala, Juha
PY - 2002
Y1 - 2002
N2 - In this paper, we report the effect of direct UV photopatterning on the compositional and morphological characteristics, and hence the conductivity, of antimony-doped tin dioxide thin films (55−70 nm) prepared using wet-deposition techniques. Direct UV photopatternability was achieved using methacrylic acid modified tin(IV) isopropoxide and antimony(III) isopropoxide as precursors. Spin-on deposited films were lithographically patterned using a UV light source (I line) with a contact mask. After developing, the structures were thermally converted to crystalline, conductive pure and Sb-doped tin oxides. The effect of the UV irradiation on the chemical composition, surface morphology, and crystal size of the fabricated films was investigated using XPS, AFM, and XRD, respectively. We found that the UV irradiation lowered the crystallization temperature, increased the crystal size in the pure or slightly doped samples, and resulted in a more homogeneous Sb dopant distribution. The increase in crystal size was found to correlate with a large increase in conductivity (up to 1500%).
AB - In this paper, we report the effect of direct UV photopatterning on the compositional and morphological characteristics, and hence the conductivity, of antimony-doped tin dioxide thin films (55−70 nm) prepared using wet-deposition techniques. Direct UV photopatternability was achieved using methacrylic acid modified tin(IV) isopropoxide and antimony(III) isopropoxide as precursors. Spin-on deposited films were lithographically patterned using a UV light source (I line) with a contact mask. After developing, the structures were thermally converted to crystalline, conductive pure and Sb-doped tin oxides. The effect of the UV irradiation on the chemical composition, surface morphology, and crystal size of the fabricated films was investigated using XPS, AFM, and XRD, respectively. We found that the UV irradiation lowered the crystallization temperature, increased the crystal size in the pure or slightly doped samples, and resulted in a more homogeneous Sb dopant distribution. The increase in crystal size was found to correlate with a large increase in conductivity (up to 1500%).
KW - direct UV-photopatterning
KW - photopatterning
KW - thin films
U2 - 10.1021/cm021228j
DO - 10.1021/cm021228j
M3 - Article
VL - 14
SP - 4443
EP - 4447
JO - Chemistry of Materials
JF - Chemistry of Materials
SN - 0897-4756
IS - 10
ER -