The effect of UV irradiation on antimony-doped tin dioxide thin films derived from methacrylic acid modified precursors

Terho Kololuoma (Corresponding Author), L.-S. Johansson, J. Campbell, A. Tolonen, Marita Halttunen, T. Haatainen, Juha Rantala

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

In this paper, we report the effect of direct UV photopatterning on the compositional and morphological characteristics, and hence the conductivity, of antimony-doped tin dioxide thin films (55−70 nm) prepared using wet-deposition techniques.
Direct UV photopatternability was achieved using methacrylic acid modified tin(IV) isopropoxide and antimony(III) isopropoxide as precursors. Spin-on deposited films were lithographically patterned using a UV light source (I line) with a contact mask.
After developing, the structures were thermally converted to crystalline, conductive pure and Sb-doped tin oxides. The effect of the UV irradiation on the chemical composition, surface morphology, and crystal size of the fabricated films was investigated using XPS, AFM, and XRD, respectively.
We found that the UV irradiation lowered the crystallization temperature, increased the crystal size in the pure or slightly doped samples, and resulted in a more homogeneous Sb dopant distribution.
The increase in crystal size was found to correlate with a large increase in conductivity (up to 1500%).
Original languageEnglish
Pages (from-to)4443-4447
JournalChemistry of Materials
Volume14
Issue number10
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

Fingerprint

Tin dioxide
Antimony
Irradiation
Thin films
Crystals
Acids
Tin
Crystallization
Tin oxides
Ultraviolet radiation
Surface morphology
Masks
X ray photoelectron spectroscopy
Doping (additives)
Crystalline materials
Chemical analysis
stannic oxide
methacrylic acid
Temperature

Keywords

  • direct UV-photopatterning
  • photopatterning
  • thin films

Cite this

Kololuoma, Terho ; Johansson, L.-S. ; Campbell, J. ; Tolonen, A. ; Halttunen, Marita ; Haatainen, T. ; Rantala, Juha. / The effect of UV irradiation on antimony-doped tin dioxide thin films derived from methacrylic acid modified precursors. In: Chemistry of Materials. 2002 ; Vol. 14, No. 10. pp. 4443-4447.
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title = "The effect of UV irradiation on antimony-doped tin dioxide thin films derived from methacrylic acid modified precursors",
abstract = "In this paper, we report the effect of direct UV photopatterning on the compositional and morphological characteristics, and hence the conductivity, of antimony-doped tin dioxide thin films (55−70 nm) prepared using wet-deposition techniques. Direct UV photopatternability was achieved using methacrylic acid modified tin(IV) isopropoxide and antimony(III) isopropoxide as precursors. Spin-on deposited films were lithographically patterned using a UV light source (I line) with a contact mask. After developing, the structures were thermally converted to crystalline, conductive pure and Sb-doped tin oxides. The effect of the UV irradiation on the chemical composition, surface morphology, and crystal size of the fabricated films was investigated using XPS, AFM, and XRD, respectively. We found that the UV irradiation lowered the crystallization temperature, increased the crystal size in the pure or slightly doped samples, and resulted in a more homogeneous Sb dopant distribution. The increase in crystal size was found to correlate with a large increase in conductivity (up to 1500{\%}).",
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author = "Terho Kololuoma and L.-S. Johansson and J. Campbell and A. Tolonen and Marita Halttunen and T. Haatainen and Juha Rantala",
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Kololuoma, T, Johansson, L-S, Campbell, J, Tolonen, A, Halttunen, M, Haatainen, T & Rantala, J 2002, 'The effect of UV irradiation on antimony-doped tin dioxide thin films derived from methacrylic acid modified precursors', Chemistry of Materials, vol. 14, no. 10, pp. 4443-4447. https://doi.org/10.1021/cm021228j

The effect of UV irradiation on antimony-doped tin dioxide thin films derived from methacrylic acid modified precursors. / Kololuoma, Terho (Corresponding Author); Johansson, L.-S.; Campbell, J.; Tolonen, A.; Halttunen, Marita; Haatainen, T.; Rantala, Juha.

In: Chemistry of Materials, Vol. 14, No. 10, 2002, p. 4443-4447.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - The effect of UV irradiation on antimony-doped tin dioxide thin films derived from methacrylic acid modified precursors

AU - Kololuoma, Terho

AU - Johansson, L.-S.

AU - Campbell, J.

AU - Tolonen, A.

AU - Halttunen, Marita

AU - Haatainen, T.

AU - Rantala, Juha

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N2 - In this paper, we report the effect of direct UV photopatterning on the compositional and morphological characteristics, and hence the conductivity, of antimony-doped tin dioxide thin films (55−70 nm) prepared using wet-deposition techniques. Direct UV photopatternability was achieved using methacrylic acid modified tin(IV) isopropoxide and antimony(III) isopropoxide as precursors. Spin-on deposited films were lithographically patterned using a UV light source (I line) with a contact mask. After developing, the structures were thermally converted to crystalline, conductive pure and Sb-doped tin oxides. The effect of the UV irradiation on the chemical composition, surface morphology, and crystal size of the fabricated films was investigated using XPS, AFM, and XRD, respectively. We found that the UV irradiation lowered the crystallization temperature, increased the crystal size in the pure or slightly doped samples, and resulted in a more homogeneous Sb dopant distribution. The increase in crystal size was found to correlate with a large increase in conductivity (up to 1500%).

AB - In this paper, we report the effect of direct UV photopatterning on the compositional and morphological characteristics, and hence the conductivity, of antimony-doped tin dioxide thin films (55−70 nm) prepared using wet-deposition techniques. Direct UV photopatternability was achieved using methacrylic acid modified tin(IV) isopropoxide and antimony(III) isopropoxide as precursors. Spin-on deposited films were lithographically patterned using a UV light source (I line) with a contact mask. After developing, the structures were thermally converted to crystalline, conductive pure and Sb-doped tin oxides. The effect of the UV irradiation on the chemical composition, surface morphology, and crystal size of the fabricated films was investigated using XPS, AFM, and XRD, respectively. We found that the UV irradiation lowered the crystallization temperature, increased the crystal size in the pure or slightly doped samples, and resulted in a more homogeneous Sb dopant distribution. The increase in crystal size was found to correlate with a large increase in conductivity (up to 1500%).

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