The Euler bend: Paving the way for high-density integration on micron-scale semiconductor platforms

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    24 Citations (Scopus)

    Abstract

    We present our recent breakthrough for high density integration in micron-scale thick semiconductor platforms. The novel bend concept is presented from a theoretical point of view and supported by experimental results on silicon strip waveguides, including the smallest low-loss bends ever reported for an optical waveguide. Some experimental example applications to resonators, spirals, and Mach-Zehnder interferometers are also presented, along with envisaged applications to other semiconductor platforms. A special focus will be dedicated to potential applications in III-V platforms, where the novel bend could lead to unprecedented dense integration of devices as well as to novel concepts for active components
    Original languageEnglish
    Title of host publicationSilicon Photonics IX
    EditorsJoel Kubby, Graham T. Reed
    PublisherInternational Society for Optics and Photonics SPIE
    ISBN (Print)978-0-8194-9903-5
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA4 Article in a conference publication
    EventSilicon Photonics IX - San Francisco, United States
    Duration: 3 Feb 20145 Feb 2014

    Publication series

    SeriesProceedings of SPIE
    Volume8990
    ISSN0277-786X

    Conference

    ConferenceSilicon Photonics IX
    Country/TerritoryUnited States
    CitySan Francisco
    Period3/02/145/02/14

    Keywords

    • semiconductors
    • waveguides
    • silicon photonics
    • high density integration
    • integrated optics
    • III-V integrated circuits

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