The Euler bend: Paving the way for high-density integration on micron-scale semiconductor platforms

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    19 Citations (Scopus)

    Abstract

    We present our recent breakthrough for high density integration in micron-scale thick semiconductor platforms. The novel bend concept is presented from a theoretical point of view and supported by experimental results on silicon strip waveguides, including the smallest low-loss bends ever reported for an optical waveguide. Some experimental example applications to resonators, spirals, and Mach-Zehnder interferometers are also presented, along with envisaged applications to other semiconductor platforms. A special focus will be dedicated to potential applications in III-V platforms, where the novel bend could lead to unprecedented dense integration of devices as well as to novel concepts for active components
    Original languageEnglish
    Title of host publicationSPIE Photonics West 2014-OPTO: Optoelectronic Devices and Materials
    PublisherInternational Society for Optics and Photonics SPIE
    ISBN (Print)978-0-8194-9903-5
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA4 Article in a conference publication
    EventSilicon Photonics IX - San Francisco, United States
    Duration: 3 Feb 20145 Feb 2014

    Publication series

    SeriesProceedings of SPIE
    Volume8990
    ISSN0277-786X

    Conference

    ConferenceSilicon Photonics IX
    CountryUnited States
    CitySan Francisco
    Period3/02/145/02/14

    Keywords

    • semiconductors
    • waveguides
    • silicon photonics
    • high density integration
    • integrated optics
    • III-V integrated circuits

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  • Cite this

    Cherchi, M., Ylinen, S., Harjanne, M., Kapulainen, M., Vehmas, T., & Aalto, T. (2014). The Euler bend: Paving the way for high-density integration on micron-scale semiconductor platforms. In SPIE Photonics West 2014-OPTO: Optoelectronic Devices and Materials [899004] International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 8990 https://doi.org/10.1117/12.2039912