The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells

R. Kudrawiec; V. M. Korpijärvi; P. Poloczek; J. Misiewicz; Pasi Laukkanen; Janne Pakarinen; M. Dumitrescu; M. Guina; M. Pessa

doi:10.1063/1.3275712

The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells

R. Kudrawiec^*
, V. M. Korpijärvi
, P. Poloczek
, J. Misiewicz
, Pasi Laukkanen
, Janne Pakarinen
, M. Dumitrescu
, M. Guina
, M. Pessa

^*Corresponding author for this work

Not published at VTT

Research output: Contribution to journal › Article › Scientific › peer-review

9 Citations (Scopus)

Abstract

The energy fine structure, corresponding to different nitrogen nearest-neighbor environments, was observed in contactless electroreflectance (CER) spectra of as-grown GaInNAs quantum wells (QWs) obtained at various As/III pressure ratios. In the spectral range of the fundamental transition, two CER resonances were detected for samples grown at low As pressures whereas only one CER resonance was observed for samples obtained at higher As pressures. This resonance corresponds to the most favorable nitrogen nearest-neighbor environment in terms of the total crystal energy. It means that the nitrogen nearest-neighbor environment in GaInNAs QWs can be controlled in molecular beam epitaxy process by As/III pressure ratio.

Original language	English
Article number	261909
Journal	Applied Physics Letters
Volume	95
Issue number	26
DOIs	https://doi.org/10.1063/1.3275712
Publication status	Published - 2009
MoE publication type	A1 Journal article-refereed

Funding

This study was performed within the framework of European Union project DeLight (Grant No. FP7 224366) and COST Action under Grant No. MP0805 focused on study of dilute-nitrides. In addition, R.K. acknowledges for support from the Foundation for Polish Science and the MNiSzW under Grant no. N N202 285634.

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title = "The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells",

abstract = "The energy fine structure, corresponding to different nitrogen nearest-neighbor environments, was observed in contactless electroreflectance (CER) spectra of as-grown GaInNAs quantum wells (QWs) obtained at various As/III pressure ratios. In the spectral range of the fundamental transition, two CER resonances were detected for samples grown at low As pressures whereas only one CER resonance was observed for samples obtained at higher As pressures. This resonance corresponds to the most favorable nitrogen nearest-neighbor environment in terms of the total crystal energy. It means that the nitrogen nearest-neighbor environment in GaInNAs QWs can be controlled in molecular beam epitaxy process by As/III pressure ratio.",

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T1 - The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells

AU - Kudrawiec, R.

AU - Korpijärvi, V. M.

AU - Poloczek, P.

AU - Misiewicz, J.

AU - Laukkanen, Pasi

AU - Pakarinen, Janne

AU - Dumitrescu, M.

AU - Guina, M.

AU - Pessa, M.

PY - 2009

Y1 - 2009

N2 - The energy fine structure, corresponding to different nitrogen nearest-neighbor environments, was observed in contactless electroreflectance (CER) spectra of as-grown GaInNAs quantum wells (QWs) obtained at various As/III pressure ratios. In the spectral range of the fundamental transition, two CER resonances were detected for samples grown at low As pressures whereas only one CER resonance was observed for samples obtained at higher As pressures. This resonance corresponds to the most favorable nitrogen nearest-neighbor environment in terms of the total crystal energy. It means that the nitrogen nearest-neighbor environment in GaInNAs QWs can be controlled in molecular beam epitaxy process by As/III pressure ratio.

AB - The energy fine structure, corresponding to different nitrogen nearest-neighbor environments, was observed in contactless electroreflectance (CER) spectra of as-grown GaInNAs quantum wells (QWs) obtained at various As/III pressure ratios. In the spectral range of the fundamental transition, two CER resonances were detected for samples grown at low As pressures whereas only one CER resonance was observed for samples obtained at higher As pressures. This resonance corresponds to the most favorable nitrogen nearest-neighbor environment in terms of the total crystal energy. It means that the nitrogen nearest-neighbor environment in GaInNAs QWs can be controlled in molecular beam epitaxy process by As/III pressure ratio.

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U2 - 10.1063/1.3275712

DO - 10.1063/1.3275712

M3 - Article

AN - SCOPUS:73649136513

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 261909

ER -

The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells

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