The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxy

K. Tappura, T. Hakkarainen, K. Rakennus, M. Hovinen, H. Asonen

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Abstract

We have studied the effect of growth temperature and growth rate on the composition of GaInAsP grown by gas-source molecular beam epitaxy on InP substrates. The composition of GaInAsP was found to be independent of substrate temperature below a transition temperature, approximately 530°C, at which appeared an abrupt change in the group V composition of GaInAsP for the wavelengths 1.05 < λ ≤ 1.3 μm. We observed that the magnitude of the abrupt change in the composition, as well as group V composition as a whole, is a function of growth rate, or V/III ratio. The main behaviour of the sticking coefficients of As and P as a function of growth rate will be explained in a qualitative manner.
Original languageEnglish
Pages (from-to)27-32
JournalJournal of Crystal Growth
Volume112
Issue number1
DOIs
Publication statusPublished - 1991
MoE publication typeA1 Journal article-refereed

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Gas source molecular beam epitaxy
molecular beam epitaxy
Chemical analysis
gases
Growth temperature
Substrates
Superconducting transition temperature
transition temperature
Wavelength
temperature
coefficients
wavelengths

Cite this

Tappura, K. ; Hakkarainen, T. ; Rakennus, K. ; Hovinen, M. ; Asonen, H. / The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxy. In: Journal of Crystal Growth. 1991 ; Vol. 112, No. 1. pp. 27-32.
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The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxy. / Tappura, K.; Hakkarainen, T.; Rakennus, K.; Hovinen, M.; Asonen, H.

In: Journal of Crystal Growth, Vol. 112, No. 1, 1991, p. 27-32.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxy

AU - Tappura, K.

AU - Hakkarainen, T.

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AU - Asonen, H.

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