TY - JOUR
T1 - The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxy
AU - Tappura, K.
AU - Hakkarainen, T.
AU - Rakennus, K.
AU - Hovinen, M.
AU - Asonen, H.
PY - 1991
Y1 - 1991
N2 - We have studied the effect of growth temperature and growth rate on the composition of GaInAsP grown by gas-source molecular beam epitaxy on InP substrates. The composition of GaInAsP was found to be independent of substrate temperature below a transition temperature, approximately 530°C, at which appeared an abrupt change in the group V composition of GaInAsP for the wavelengths 1.05 < λ ≤ 1.3 μm. We observed that the magnitude of the abrupt change in the composition, as well as group V composition as a whole, is a function of growth rate, or V/III ratio. The main behaviour of the sticking coefficients of As and P as a function of growth rate will be explained in a qualitative manner.
AB - We have studied the effect of growth temperature and growth rate on the composition of GaInAsP grown by gas-source molecular beam epitaxy on InP substrates. The composition of GaInAsP was found to be independent of substrate temperature below a transition temperature, approximately 530°C, at which appeared an abrupt change in the group V composition of GaInAsP for the wavelengths 1.05 < λ ≤ 1.3 μm. We observed that the magnitude of the abrupt change in the composition, as well as group V composition as a whole, is a function of growth rate, or V/III ratio. The main behaviour of the sticking coefficients of As and P as a function of growth rate will be explained in a qualitative manner.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0026413189&partnerID=MN8TOARS
U2 - 10.1016/0022-0248(91)90908-N
DO - 10.1016/0022-0248(91)90908-N
M3 - Article
SN - 0022-0248
VL - 112
SP - 27
EP - 32
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -