We have studied the effect of growth temperature and growth rate on the composition of GaInAsP grown by gas-source molecular beam epitaxy on InP substrates. The composition of GaInAsP was found to be independent of substrate temperature below a transition temperature, approximately 530°C, at which appeared an abrupt change in the group V composition of GaInAsP for the wavelengths 1.05 < λ ≤ 1.3 μm. We observed that the magnitude of the abrupt change in the composition, as well as group V composition as a whole, is a function of growth rate, or V/III ratio. The main behaviour of the sticking coefficients of As and P as a function of growth rate will be explained in a qualitative manner.
Tappura, K., Hakkarainen, T., Rakennus, K., Hovinen, M., & Asonen, H. (1991). The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxy. Journal of Crystal Growth, 112(1), 27-32. https://doi.org/10.1016/0022-0248(91)90908-N