The influence of hydrogen dose and boron doping on the ion-cutting of Si

Arto Nurmela (Corresponding Author), Kimmo Henttinen, Tommi Suni, Ilkka Suni

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

Ion beam techniques were used to study silicon‐on‐insulator (SOI) structures manufactured by the ion cutting process. Silicon wafers and epitaxial Si layers with various doping levels were implanted with H2+ ions at 100 keV prior to wafer bonding. Some wafers were also implanted with B+ ions at 175 keV. The implantation doses varied from 2.5 × 1016 to 5.0 × 1016 cm−2 for H2+ and from 1 × 1013 to 3 × 1015 cm−2 for B+. The thickness of an SOI layer was determined by conventional Rutherford backscattering spectrometry (RBS) and the crystal damage was examined by RBS in channelling mode (RBS/C). The disorder due to implanted hydrogen was found to decrease with increasing boron concentration. The measured thickness of the exfoliated Si layer was 455–460 nm for highly boron‐doped samples and 470–490 nm for the undoped samples. Exfoliation occurred inside the damage zone in all the samples, irrespective of hydrogen dose and boron doping. Our results suggest that the exfoliation depth in Si is associated with the lattice damage generated by the implantation.
Original languageEnglish
Pages (from-to)757-759
Number of pages3
JournalSurface and Interface Analysis
Volume35
Issue number9
DOIs
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

Fingerprint

Boron
Hydrogen
boron
Doping (additives)
Rutherford backscattering spectroscopy
wafers
Ions
damage
dosage
Spectrometry
implantation
backscattering
hydrogen
Wafer bonding
ions
Silicon wafers
Ion implantation
Ion beams
spectroscopy
ion beams

Keywords

  • RBS
  • Rutherford backscattering
  • channeling
  • silicon-on-insulator
  • SOI
  • ion cutting

Cite this

Nurmela, Arto ; Henttinen, Kimmo ; Suni, Tommi ; Suni, Ilkka. / The influence of hydrogen dose and boron doping on the ion-cutting of Si. In: Surface and Interface Analysis. 2003 ; Vol. 35, No. 9. pp. 757-759.
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title = "The influence of hydrogen dose and boron doping on the ion-cutting of Si",
abstract = "Ion beam techniques were used to study silicon‐on‐insulator (SOI) structures manufactured by the ion cutting process. Silicon wafers and epitaxial Si layers with various doping levels were implanted with H2+ ions at 100 keV prior to wafer bonding. Some wafers were also implanted with B+ ions at 175 keV. The implantation doses varied from 2.5 × 1016 to 5.0 × 1016 cm−2 for H2+ and from 1 × 1013 to 3 × 1015 cm−2 for B+. The thickness of an SOI layer was determined by conventional Rutherford backscattering spectrometry (RBS) and the crystal damage was examined by RBS in channelling mode (RBS/C). The disorder due to implanted hydrogen was found to decrease with increasing boron concentration. The measured thickness of the exfoliated Si layer was 455–460 nm for highly boron‐doped samples and 470–490 nm for the undoped samples. Exfoliation occurred inside the damage zone in all the samples, irrespective of hydrogen dose and boron doping. Our results suggest that the exfoliation depth in Si is associated with the lattice damage generated by the implantation.",
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The influence of hydrogen dose and boron doping on the ion-cutting of Si. / Nurmela, Arto (Corresponding Author); Henttinen, Kimmo; Suni, Tommi; Suni, Ilkka.

In: Surface and Interface Analysis, Vol. 35, No. 9, 2003, p. 757-759.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - The influence of hydrogen dose and boron doping on the ion-cutting of Si

AU - Nurmela, Arto

AU - Henttinen, Kimmo

AU - Suni, Tommi

AU - Suni, Ilkka

N1 - Project code: zlet9124

PY - 2003

Y1 - 2003

N2 - Ion beam techniques were used to study silicon‐on‐insulator (SOI) structures manufactured by the ion cutting process. Silicon wafers and epitaxial Si layers with various doping levels were implanted with H2+ ions at 100 keV prior to wafer bonding. Some wafers were also implanted with B+ ions at 175 keV. The implantation doses varied from 2.5 × 1016 to 5.0 × 1016 cm−2 for H2+ and from 1 × 1013 to 3 × 1015 cm−2 for B+. The thickness of an SOI layer was determined by conventional Rutherford backscattering spectrometry (RBS) and the crystal damage was examined by RBS in channelling mode (RBS/C). The disorder due to implanted hydrogen was found to decrease with increasing boron concentration. The measured thickness of the exfoliated Si layer was 455–460 nm for highly boron‐doped samples and 470–490 nm for the undoped samples. Exfoliation occurred inside the damage zone in all the samples, irrespective of hydrogen dose and boron doping. Our results suggest that the exfoliation depth in Si is associated with the lattice damage generated by the implantation.

AB - Ion beam techniques were used to study silicon‐on‐insulator (SOI) structures manufactured by the ion cutting process. Silicon wafers and epitaxial Si layers with various doping levels were implanted with H2+ ions at 100 keV prior to wafer bonding. Some wafers were also implanted with B+ ions at 175 keV. The implantation doses varied from 2.5 × 1016 to 5.0 × 1016 cm−2 for H2+ and from 1 × 1013 to 3 × 1015 cm−2 for B+. The thickness of an SOI layer was determined by conventional Rutherford backscattering spectrometry (RBS) and the crystal damage was examined by RBS in channelling mode (RBS/C). The disorder due to implanted hydrogen was found to decrease with increasing boron concentration. The measured thickness of the exfoliated Si layer was 455–460 nm for highly boron‐doped samples and 470–490 nm for the undoped samples. Exfoliation occurred inside the damage zone in all the samples, irrespective of hydrogen dose and boron doping. Our results suggest that the exfoliation depth in Si is associated with the lattice damage generated by the implantation.

KW - RBS

KW - Rutherford backscattering

KW - channeling

KW - silicon-on-insulator

KW - SOI

KW - ion cutting

U2 - 10.1002/sia.1597

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