The influence of hydrogen dose and boron doping on the ion-cutting of Si

INIS

• layers 100%
• boron 100%
• hydrogen 100%
• doses 100%
• ions 100%
• cutting 100%
• thickness 66%
• damage 66%
• kev range 66%
• rutherford backscattering spectrometry 66%
• levels 33%
• bonding 33%
• silicon 33%
• concentration 33%
• increasing 33%
• depth 33%
• ion beams 33%
• crystals 33%
• epitaxy 33%
• channeling 33%
• damage zone 33%
• boron ions 33%

Keyphrases

• Rutherford Backscattering Spectrometry 100%
• Hydrogen Effect 100%
• Si Layer 100%
• Boron Doping 100%
• Ion-cutting 100%
• Silicon Wafer 50%
• Boron Concentration 50%
• Wafer 50%
• Wafer Bonding 50%
• Cutting Process 50%
• Proton Beam Therapy 50%
• Doping Level 50%
• Undoped 50%
• Damage Zone 50%
• Lattice Damage 50%
• Exfoliating 50%
• Crystal Damage 50%
• Implantation Dose 50%
• Epitaxial Si 50%

Material Science

• Boron 100%
• Rutherford Backscattering Spectrometry 66%
• Silicon Wafer 33%
• Boron Ion 33%