The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals

K. Saarinen, J. Nissilä, P. Hautojärvi, Jari Likonen, T. Suski, I. Grzegory, B. Lucznik, S. Porowski

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to MgGa. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of O+N donors by MgGa acceptors.
Original languageEnglish
Pages (from-to)2441-2443
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number16
DOIs
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

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negative ions
crystals
ions
energy of formation
secondary ion mass spectrometry
gallium
positrons
life (durability)
impurities
spectroscopy

Cite this

Saarinen, K., Nissilä, J., Hautojärvi, P., Likonen, J., Suski, T., Grzegory, I., ... Porowski, S. (1999). The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals. Applied Physics Letters, 75(16), 2441-2443. https://doi.org/10.1063/1.125041
Saarinen, K. ; Nissilä, J. ; Hautojärvi, P. ; Likonen, Jari ; Suski, T. ; Grzegory, I. ; Lucznik, B. ; Porowski, S. / The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals. In: Applied Physics Letters. 1999 ; Vol. 75, No. 16. pp. 2441-2443.
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abstract = "Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to Mg−Ga. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of O+N donors by Mg−Ga acceptors.",
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Saarinen, K, Nissilä, J, Hautojärvi, P, Likonen, J, Suski, T, Grzegory, I, Lucznik, B & Porowski, S 1999, 'The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals', Applied Physics Letters, vol. 75, no. 16, pp. 2441-2443. https://doi.org/10.1063/1.125041

The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals. / Saarinen, K.; Nissilä, J.; Hautojärvi, P.; Likonen, Jari; Suski, T.; Grzegory, I.; Lucznik, B.; Porowski, S.

In: Applied Physics Letters, Vol. 75, No. 16, 1999, p. 2441-2443.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals

AU - Saarinen, K.

AU - Nissilä, J.

AU - Hautojärvi, P.

AU - Likonen, Jari

AU - Suski, T.

AU - Grzegory, I.

AU - Lucznik, B.

AU - Porowski, S.

N1 - Project code: K9SU00369

PY - 1999

Y1 - 1999

N2 - Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to Mg−Ga. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of O+N donors by Mg−Ga acceptors.

AB - Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to Mg−Ga. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of O+N donors by Mg−Ga acceptors.

U2 - 10.1063/1.125041

DO - 10.1063/1.125041

M3 - Article

VL - 75

SP - 2441

EP - 2443

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

ER -