Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 2441-2443 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 75 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 1999 |
| MoE publication type | A1 Journal article-refereed |
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The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals. / Saarinen, K.; Nissilä, J.; Hautojärvi, P.; Likonen, Jari; Suski, T.; Grzegory, I.; Lucznik, B.; Porowski, S.
In: Applied Physics Letters, Vol. 75, No. 16, 1999, p. 2441-2443.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals
AU - Saarinen, K.
AU - Nissilä, J.
AU - Hautojärvi, P.
AU - Likonen, Jari
AU - Suski, T.
AU - Grzegory, I.
AU - Lucznik, B.
AU - Porowski, S.
N1 - Project code: K9SU00369
PY - 1999
Y1 - 1999
N2 - Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to Mg−Ga. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of O+N donors by Mg−Ga acceptors.
AB - Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to Mg−Ga. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of O+N donors by Mg−Ga acceptors.
U2 - 10.1063/1.125041
DO - 10.1063/1.125041
M3 - Article
VL - 75
SP - 2441
EP - 2443
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 16
ER -