The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals

K. Saarinen; J. Nissilä; P. Hautojärvi; Jari Likonen; T. Suski; I. Grzegory; B. Lucznik; S. Porowski

doi:10.1063/1.125041

The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals

K. Saarinen, J. Nissilä, P. Hautojärvi, Jari Likonen, T. Suski, I. Grzegory, B. Lucznik, S. Porowski

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the V_Ga formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to Mg⁻_Ga. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of O⁺N donors by Mg⁻_Ga acceptors.

Original language	English
Pages (from-to)	2441-2443
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	16
DOIs	https://doi.org/10.1063/1.125041
Publication status	Published - 1999
MoE publication type	A1 Journal article-refereed

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title = "The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals",

abstract = "Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to Mg−Ga. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of O+N donors by Mg−Ga acceptors.",

author = "K. Saarinen and J. Nissil{\"a} and P. Hautoj{\"a}rvi and Jari Likonen and T. Suski and I. Grzegory and B. Lucznik and S. Porowski",

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TY - JOUR

T1 - The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals

AU - Saarinen, K.

AU - Nissilä, J.

AU - Hautojärvi, P.

AU - Likonen, Jari

AU - Suski, T.

AU - Grzegory, I.

AU - Lucznik, B.

AU - Porowski, S.

N1 - Project code: K9SU00369

PY - 1999

Y1 - 1999

N2 - Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to Mg−Ga. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of O+N donors by Mg−Ga acceptors.

AB - Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to Mg−Ga. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of O+N donors by Mg−Ga acceptors.

U2 - 10.1063/1.125041

DO - 10.1063/1.125041

M3 - Article

VL - 75

SP - 2441

EP - 2443

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

ER -