The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals

K. Saarinen, J. Nissilä, P. Hautojärvi, Jari Likonen, T. Suski, I. Grzegory, B. Lucznik, S. Porowski

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    Abstract

    Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to MgGa. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of O+N donors by MgGa acceptors.
    Original languageEnglish
    Pages (from-to)2441-2443
    Number of pages3
    JournalApplied Physics Letters
    Volume75
    Issue number16
    DOIs
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

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    Saarinen, K., Nissilä, J., Hautojärvi, P., Likonen, J., Suski, T., Grzegory, I., Lucznik, B., & Porowski, S. (1999). The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals. Applied Physics Letters, 75(16), 2441-2443. https://doi.org/10.1063/1.125041