The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals
- K. Saarinen
- , J. Nissilä
- , P. Hautojärvi
- , Jari Likonen
- , T. Suski
- , I. Grzegory
- , B. Lucznik
- , S. Porowski
- Helsinki University of Technology
- Institute of High Pressure Physics
Research output: Contribution to journal › Article › Scientific › peer-review
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