A study is made of the DC current-voltage characteristics of several different LIGBT (lateral insulated-gate bipolar transistor) devices both theoretically and experimentally. The theoretical part is based on the analytical expressions and includes some improvements as compared to the earlier circuit simulation models for the LIGBTs. This work extends the range of validity of these models. The fit between the theory and experiments is satisfactory also in the saturated regime of the current-voltage curves. The importance of the Kirk effect is emphasized especially for devices with short distances between the anode and cathode.