The Kirk effect in the LIGBT devices

Simo Eränen, Marko Grönlund, Martti Blomberg, Jyrki Kiihamäki

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

A study is made of the DC current-voltage characteristics of several different LIGBT (lateral insulated-gate bipolar transistor) devices both theoretically and experimentally. The theoretical part is based on the analytical expressions and includes some improvements as compared to the earlier circuit simulation models for the LIGBTs. This work extends the range of validity of these models. The fit between the theory and experiments is satisfactory also in the saturated regime of the current-voltage curves. The importance of the Kirk effect is emphasized especially for devices with short distances between the anode and cathode.
Original languageEnglish
Pages (from-to)1919 - 1924
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume38
Issue number8
DOIs
Publication statusPublished - 1991
MoE publication typeA1 Journal article-refereed

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Insulated gate bipolar transistors (IGBT)
Circuit simulation
Current voltage characteristics
Anodes
Cathodes
Electric potential
Experiments

Cite this

Eränen, Simo ; Grönlund, Marko ; Blomberg, Martti ; Kiihamäki, Jyrki. / The Kirk effect in the LIGBT devices. In: IEEE Transactions on Electron Devices. 1991 ; Vol. 38, No. 8. pp. 1919 - 1924.
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The Kirk effect in the LIGBT devices. / Eränen, Simo; Grönlund, Marko; Blomberg, Martti; Kiihamäki, Jyrki.

In: IEEE Transactions on Electron Devices, Vol. 38, No. 8, 1991, p. 1919 - 1924.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - The Kirk effect in the LIGBT devices

AU - Eränen, Simo

AU - Grönlund, Marko

AU - Blomberg, Martti

AU - Kiihamäki, Jyrki

N1 - Project code: puo7006

PY - 1991

Y1 - 1991

N2 - A study is made of the DC current-voltage characteristics of several different LIGBT (lateral insulated-gate bipolar transistor) devices both theoretically and experimentally. The theoretical part is based on the analytical expressions and includes some improvements as compared to the earlier circuit simulation models for the LIGBTs. This work extends the range of validity of these models. The fit between the theory and experiments is satisfactory also in the saturated regime of the current-voltage curves. The importance of the Kirk effect is emphasized especially for devices with short distances between the anode and cathode.

AB - A study is made of the DC current-voltage characteristics of several different LIGBT (lateral insulated-gate bipolar transistor) devices both theoretically and experimentally. The theoretical part is based on the analytical expressions and includes some improvements as compared to the earlier circuit simulation models for the LIGBTs. This work extends the range of validity of these models. The fit between the theory and experiments is satisfactory also in the saturated regime of the current-voltage curves. The importance of the Kirk effect is emphasized especially for devices with short distances between the anode and cathode.

U2 - 10.1109/16.119034

DO - 10.1109/16.119034

M3 - Article

VL - 38

SP - 1919

EP - 1924

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 8

ER -