Original language | English |
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Pages (from-to) | 1070-1071 |
Journal | Journal of Crystal Growth |
Volume | 107 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1991 |
MoE publication type | A1 Journal article-refereed |
The substrate-epitaxial interface of GaAs and InP grown by GSMBE
Kirsi Tappura, A. Salokatve, K. Rakennus, H. Asonen, M. Pessa
Research output: Contribution to journal › Article › Scientific › peer-review
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(Scopus)