The substrate-epitaxial interface of GaAs and InP grown by GSMBE

Kirsi Tappura, A. Salokatve, K. Rakennus, H. Asonen, M. Pessa

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)1070-1071
JournalJournal of Crystal Growth
Volume107
Issue number1-4
DOIs
Publication statusPublished - 1991
MoE publication typeA1 Journal article-refereed

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