The substrate-epitaxial interface of GaAs and InP grown by GSMBE

Kirsi Tappura, A. Salokatve, K. Rakennus, H. Asonen, M. Pessa

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@article{17d773f6b97f48a8a86e7cdadc64058a,

title = "The substrate-epitaxial interface of GaAs and InP grown by GSMBE",

author = "Kirsi Tappura and A. Salokatve and K. Rakennus and H. Asonen and M. Pessa",

year = "1991",

doi = "10.1016/0022-0248(91)90614-B",

language = "English",

volume = "107",

pages = "1070--1071",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - The substrate-epitaxial interface of GaAs and InP grown by GSMBE

AU - Tappura, Kirsi

AU - Salokatve, A.

AU - Rakennus, K.

AU - Asonen, H.

AU - Pessa, M.

PY - 1991

Y1 - 1991

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0025791450&partnerID=MN8TOARS

U2 - 10.1016/0022-0248(91)90614-B

DO - 10.1016/0022-0248(91)90614-B

M3 - Article

SN - 0022-0248

VL - 107

SP - 1070

EP - 1071

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -