The substrate-epitaxial interface of GaAs and InP grown by GSMBE

K. Tappura, A. Salokatve, K. Rakennus, H. Asonen, M. Pessa

Research output: Contribution to journalArticle

1 Citation (Scopus)
Original languageUndefined
Pages (from-to)1070-1071
JournalJournal of Crystal Growth
Volume107
Issue number1-4
DOIs
Publication statusPublished - 1991
MoE publication typeA1 Journal article-refereed

Cite this