The ultimate depth resolution in SIMS profiling: Low-energy ion beam mixing of Au-Pt interface

Jari Likonen, Mikko Hautala, Ilkka Koponen

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    The ion beam induced mixing of Au/Pt and Pt/Au multilayers in SIMS sputter depth profiling with 2.5, 5 and 8 keV Ar+ and Xe+ ions has been studied. The depth resolution varies linearly as the square root of the bombarding energy and is slightly better for Xe+ than for Ar+ ions. The decay lengths of the trailing edge are 12–30 Å in Pt and 30–90 Å in Au. Experimental profiles are compared with simulations based on a model which describes the atomic transport from the initial collisional phase to the late thermalized stage. Experimentally observed broadening is predicted by the model. The larger decay lengths in Au are attributed to more efficient electron-phonon coupling and thus more rapid quenching of thermal spikes in Pt than in Au.

    Original languageEnglish
    Pages (from-to)151 - 155
    Number of pages5
    JournalNuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
    Issue numberPart 1
    Publication statusPublished - 1993
    MoE publication typeA1 Journal article-refereed


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